KR100768876B1 - 구동회로 - Google Patents
구동회로 Download PDFInfo
- Publication number
- KR100768876B1 KR100768876B1 KR1020047011521A KR20047011521A KR100768876B1 KR 100768876 B1 KR100768876 B1 KR 100768876B1 KR 1020047011521 A KR1020047011521 A KR 1020047011521A KR 20047011521 A KR20047011521 A KR 20047011521A KR 100768876 B1 KR100768876 B1 KR 100768876B1
- Authority
- KR
- South Korea
- Prior art keywords
- potential
- type transistor
- node
- circuit
- transistor
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/26—Push-pull amplifiers; Phase-splitters therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/4521—Complementary long tailed pairs having parallel inputs and being supplied in parallel
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
- H03F3/45744—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction
- H03F3/45757—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction by using a feedforward circuit
- H03F3/45762—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by offset reduction by using a feedforward circuit using switching means, e.g. sample and hold
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45648—Indexing scheme relating to differential amplifiers the LC comprising two current sources, which are not cascode current sources
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (20)
- 입력전위(VI)에 따른 전위를 출력노드(N2)에 출력하는 구동회로에 있어서,제1 전원전위(VDD)의 라인과 제1 노드(N10)와의 사이에 접속된 제1 도전형식의 제1 트랜지스터(10); 게이트 및 드레인이 상기 제1 트랜지스터의 게이트에 접속되고, 소스가 제2 노드(N9)에 접속된 제1 도전형식의 제2 트랜지스터(9); 제1 전원전위(VDD) 및 제2 전원전위(GND)의 라인 사이에 상기 제2 트랜지스터와 직렬접속된 제3 트랜지스터(8); 및, 상기 제2 노드의 전위가 상기 입력전위에 일치하도록 상기 제3 트랜지스터의 게이트전위를 제어하는 제1 차동증폭회로(2)를 포함하는 제1 부구동회로(1)와,상기 제2 전원전위(GND)의 라인과 제3 노드(N60)와의 사이에 접속된 제2 도전형식의 제4 트랜지스터(58); 게이트 및 드레인이 상기 제4 트랜지스터의 게이트에 접속되고, 소스가 제4 노드(N56)에 접속된 제2 도전형식의 제5 트랜지스터(57); 상기 제1 전원전위 및 제2 전원전위의 라인 사이에 상기 제5 트랜지스터와 직렬접속된 제6 트랜지스터(67); 및, 상기 제4 노드의 전위가 상기 입력전위에 일치하도록 상기 제6 트랜지스터의 게이트전위를 제어하는 제2 차동증폭회로(26)를 포함하는 제2 부구동회로(65)와,상기 제1 부구동회로의 오프셋전압(VOFa)을 소거하고, 상기 제1 노드를 상기 출력노드(N2)에 접속하는 제1 오프셋 보상회로(111a, S1a∼S4a)와,상기 제2 부구동회로의 오프셋전압(VOFb)을 소거하고, 상기 제3 노드를 상기 출력노드(N2)에 접속하는 제2 오프셋 보상회로(111b, S1b∼S4b)를 구비한 것을 특징으로 하는 구동회로.
- 제 1 항에 있어서,상기 제3 트랜지스터는, 상기 제1 전원전위(VDD)의 라인과 상기 제2 트랜지스터의 드레인과의 사이에 접속되고,상기 제1 부구동회로는, 상기 제2 노드(N9)와 상기 제2 전원전위(GND)의 라인과의 사이에 접속된 정전류회로(11)를 더 포함한 것을 특징으로 하는 구동회로.
- 제 2 항에 있어서,상기 제1 부구동회로는, 상기 정전류회로에 병렬접속되고, 미리 정해진 타이밍으로 펄스적으로 도통하는 스위칭소자(76)를 더 포함한 것을 특징으로 하는 구동회로.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2002/012342 WO2004049562A1 (ja) | 2002-11-26 | 2002-11-26 | 駆動回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040085166A KR20040085166A (ko) | 2004-10-07 |
KR100768876B1 true KR100768876B1 (ko) | 2007-10-22 |
Family
ID=32375610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020047011521A KR100768876B1 (ko) | 2002-11-26 | 2002-11-26 | 구동회로 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6975168B2 (ko) |
JP (1) | JP4336315B2 (ko) |
KR (1) | KR100768876B1 (ko) |
CN (1) | CN100525086C (ko) |
DE (1) | DE10297628B4 (ko) |
WO (1) | WO2004049562A1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7276966B1 (en) * | 2003-10-28 | 2007-10-02 | Stmicroelectronics N.V. | Radio frequency envelope apparatus and method |
KR101183431B1 (ko) * | 2005-06-23 | 2012-09-14 | 엘지디스플레이 주식회사 | 게이트 드라이버 |
JP2007116568A (ja) * | 2005-10-24 | 2007-05-10 | Niigata Seimitsu Kk | 差動増幅器 |
JP5665641B2 (ja) * | 2010-06-08 | 2015-02-04 | ルネサスエレクトロニクス株式会社 | 出力回路及びデータドライバ及び表示装置 |
JP5197691B2 (ja) * | 2010-08-26 | 2013-05-15 | 株式会社東芝 | ヒステリシスコンパレータ |
JP6719233B2 (ja) * | 2016-03-07 | 2020-07-08 | エイブリック株式会社 | 出力回路 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03139908A (ja) * | 1989-10-25 | 1991-06-14 | Olympus Optical Co Ltd | ソースフォロワ回路 |
JPH04215315A (ja) * | 1990-10-04 | 1992-08-06 | Nec Corp | レベルシフト回路 |
JPH0529840A (ja) * | 1991-07-17 | 1993-02-05 | Hitachi Ltd | 半導体集積回路装置 |
JPH05297830A (ja) * | 1992-04-20 | 1993-11-12 | Fujitsu Ltd | アクティブマトリックス液晶駆動方法及び回路 |
JPH07142940A (ja) * | 1993-11-17 | 1995-06-02 | New Japan Radio Co Ltd | Mosfet電力増幅器 |
JPH09260969A (ja) * | 1996-03-22 | 1997-10-03 | Toshiba Ave Corp | 信号増幅回路 |
JP2002290172A (ja) * | 2001-03-28 | 2002-10-04 | Sharp Corp | ボルテージフォロア回路および表示装置用駆動装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2904417A (en) * | 1959-09-15 | Process for the production of synthesis | ||
US3971847A (en) * | 1973-12-26 | 1976-07-27 | The United States Of America As Represented By The Adminstrator Of The National Aeronautics And Space Administration | Hydrogen-rich gas generator |
BE1000708A7 (nl) * | 1987-06-30 | 1989-03-14 | Bell Telephone Mfg | Correctieschakeling voor versterker. |
JPH09219636A (ja) | 1996-02-09 | 1997-08-19 | Sharp Corp | 駆動回路 |
JPH09232883A (ja) * | 1996-02-23 | 1997-09-05 | Oki Micro Design Miyazaki:Kk | 演算増幅回路 |
JPH09315454A (ja) | 1996-05-27 | 1997-12-09 | Jidosha Buhin Kogyo Kk | 容器の排出口構造 |
US20020079384A1 (en) * | 1998-07-27 | 2002-06-27 | Popov Serguei A. | Liquid-gas ejector with an improved liquid nozzle and variants |
CA2341437C (en) * | 1998-08-27 | 2007-05-01 | Tyma, Inc. | Fuel supply system for a vehicle including a vaporization device for converting fuel and water into hydrogen |
US6066985A (en) * | 1998-09-10 | 2000-05-23 | Seiko Epson Corporation | Large swing input/output analog buffer |
JP3695305B2 (ja) | 2000-10-12 | 2005-09-14 | セイコーエプソン株式会社 | 電源回路 |
JP2002344264A (ja) * | 2001-05-18 | 2002-11-29 | Rohm Co Ltd | 増幅器 |
-
2002
- 2002-11-26 KR KR1020047011521A patent/KR100768876B1/ko not_active IP Right Cessation
- 2002-11-26 CN CNB028274458A patent/CN100525086C/zh not_active Expired - Fee Related
- 2002-11-26 US US10/500,219 patent/US6975168B2/en not_active Expired - Lifetime
- 2002-11-26 JP JP2004554941A patent/JP4336315B2/ja not_active Expired - Fee Related
- 2002-11-26 DE DE10297628T patent/DE10297628B4/de not_active Expired - Fee Related
- 2002-11-26 WO PCT/JP2002/012342 patent/WO2004049562A1/ja active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03139908A (ja) * | 1989-10-25 | 1991-06-14 | Olympus Optical Co Ltd | ソースフォロワ回路 |
JPH04215315A (ja) * | 1990-10-04 | 1992-08-06 | Nec Corp | レベルシフト回路 |
JPH0529840A (ja) * | 1991-07-17 | 1993-02-05 | Hitachi Ltd | 半導体集積回路装置 |
JPH05297830A (ja) * | 1992-04-20 | 1993-11-12 | Fujitsu Ltd | アクティブマトリックス液晶駆動方法及び回路 |
JPH07142940A (ja) * | 1993-11-17 | 1995-06-02 | New Japan Radio Co Ltd | Mosfet電力増幅器 |
JPH09260969A (ja) * | 1996-03-22 | 1997-10-03 | Toshiba Ave Corp | 信号増幅回路 |
JP2002290172A (ja) * | 2001-03-28 | 2002-10-04 | Sharp Corp | ボルテージフォロア回路および表示装置用駆動装置 |
Also Published As
Publication number | Publication date |
---|---|
US20040256636A1 (en) | 2004-12-23 |
CN100525086C (zh) | 2009-08-05 |
JPWO2004049562A1 (ja) | 2006-03-30 |
KR20040085166A (ko) | 2004-10-07 |
WO2004049562A1 (ja) | 2004-06-10 |
JP4336315B2 (ja) | 2009-09-30 |
CN1615579A (zh) | 2005-05-11 |
DE10297628T5 (de) | 2005-02-10 |
US6975168B2 (en) | 2005-12-13 |
DE10297628B4 (de) | 2009-10-08 |
DE10297628T8 (de) | 2005-02-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7521971B2 (en) | Buffer circuit | |
CN108052149B (zh) | 信号发生电路 | |
US20110025655A1 (en) | Operational amplifier and semiconductor device using the same | |
KR100292898B1 (ko) | 회로출력단자에서오버슈트를방지할수있는정전압회로 | |
US20050184805A1 (en) | Differential amplifier circuit | |
KR0140160B1 (ko) | 저동작전압에서 작동이 가능하고, 고출력 임피던스를 갖는 캐스코드 회로 | |
US8723555B2 (en) | Comparator circuit | |
US4649292A (en) | CMOS power-on detecting circuit | |
KR100768876B1 (ko) | 구동회로 | |
JP2004194124A (ja) | ヒステリシスコンパレータ回路 | |
US6236195B1 (en) | Voltage variation correction circuit | |
US7453104B2 (en) | Operational amplifier including low DC gain wideband feed forward circuit and high DC gain narrowband gain circuit | |
KR101442302B1 (ko) | 물리량 센서 | |
JP3673715B2 (ja) | ピークホールド回路 | |
CN110611497B (zh) | 比较器以及振荡电路 | |
US20230327621A1 (en) | Device for copying a current | |
CN111800101A (zh) | 用于运算放大器的转换升压电路 | |
KR100363139B1 (ko) | 버퍼회로및바이어스회로 | |
US20050231275A1 (en) | Operational amplifier | |
KR100863529B1 (ko) | 연산 증폭기 회로 | |
US20080018385A1 (en) | Electric power circuit for driving display panel | |
US10571946B2 (en) | Constant voltage output circuit | |
US7906954B2 (en) | Bias circuit | |
JP2020126396A (ja) | 定電圧電源回路およびそれを備えた半導体装置 | |
KR0149307B1 (ko) | 정착시간이 빠른 연산증폭기 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application | ||
J201 | Request for trial against refusal decision | ||
J301 | Trial decision |
Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20061002 Effective date: 20070628 |
|
S901 | Examination by remand of revocation | ||
GRNO | Decision to grant (after opposition) | ||
GRNT | Written decision to grant | ||
G170 | Re-publication after modification of scope of protection [patent] | ||
FPAY | Annual fee payment |
Payment date: 20120924 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20130924 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20141001 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150917 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160921 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170920 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |