KR100767648B1 - 용량성 박막 트랜지스터 어레이의 작동 방법 - Google Patents

용량성 박막 트랜지스터 어레이의 작동 방법 Download PDF

Info

Publication number
KR100767648B1
KR100767648B1 KR1020000047443A KR20000047443A KR100767648B1 KR 100767648 B1 KR100767648 B1 KR 100767648B1 KR 1020000047443 A KR1020000047443 A KR 1020000047443A KR 20000047443 A KR20000047443 A KR 20000047443A KR 100767648 B1 KR100767648 B1 KR 100767648B1
Authority
KR
South Korea
Prior art keywords
capacitor
array
tft
charge
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020000047443A
Other languages
English (en)
Korean (ko)
Other versions
KR20010050098A (ko
Inventor
카네마이클질리스
김홍진
Original Assignee
톰슨 라이센싱
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 톰슨 라이센싱 filed Critical 톰슨 라이센싱
Publication of KR20010050098A publication Critical patent/KR20010050098A/ko
Application granted granted Critical
Publication of KR100767648B1 publication Critical patent/KR100767648B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134336Matrix
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416Control or interface arrangements specially adapted for digitisers
    • G06F3/04166Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6729Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739Conductor-insulator-semiconductor electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Human Computer Interaction (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Image Input (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
KR1020000047443A 1999-08-18 2000-08-17 용량성 박막 트랜지스터 어레이의 작동 방법 Expired - Fee Related KR100767648B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US37692599A 1999-08-18 1999-08-18
US09/376,925 1999-08-18
US9/376,925 1999-08-18

Publications (2)

Publication Number Publication Date
KR20010050098A KR20010050098A (ko) 2001-06-15
KR100767648B1 true KR100767648B1 (ko) 2007-10-17

Family

ID=23487062

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000047443A Expired - Fee Related KR100767648B1 (ko) 1999-08-18 2000-08-17 용량성 박막 트랜지스터 어레이의 작동 방법

Country Status (4)

Country Link
JP (1) JP4531219B2 (enrdf_load_stackoverflow)
KR (1) KR100767648B1 (enrdf_load_stackoverflow)
CN (1) CN1182484C (enrdf_load_stackoverflow)
TW (1) TW501069B (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100473383B1 (ko) * 2002-07-19 2005-03-10 매그나칩 반도체 유한회사 정전용량식 지문감지센서의 단위화소 및 그를 이용한지문감지장치
KR100943271B1 (ko) * 2003-05-06 2010-02-23 삼성전자주식회사 지문 인식신호 처리장치
JP3741282B2 (ja) * 2003-07-28 2006-02-01 セイコーエプソン株式会社 入力装置、電子機器及び入力装置の駆動方法
CN104408441A (zh) * 2014-12-10 2015-03-11 杨鹏飞 基于tft薄膜晶体管的指纹识别传感器及其测量方法
CN105989350B (zh) * 2015-03-05 2019-11-22 上海箩箕技术有限公司 像素单元、结构、结构阵列、读出电路及控制方法
US11838022B2 (en) * 2019-06-17 2023-12-05 Microsoft Technology Licensing, Llc Cryogenic-CMOS interface for controlling qubits

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970007780A (ko) * 1995-07-18 1997-02-21 제프리 엘. 포만 액정 표시 장치의 구동 장치 및 방법
KR19980063421A (ko) * 1996-12-10 1998-10-07 구자홍 정전기 방지용 액정 표시 패널의 구조 및 그 운영 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175446A (en) * 1991-02-14 1992-12-29 Thomson, S.A. Demultiplexer including a three-state gate
US5225959A (en) * 1991-10-15 1993-07-06 Xerox Corporation Capacitive tactile sensor array and method for sensing pressure with the array
GB9608747D0 (en) * 1996-04-26 1996-07-03 Philips Electronics Nv Fingerprint sensing devices and systems incorporating such
GB9708559D0 (en) * 1997-04-29 1997-06-18 Philips Electronics Nv Fingerprint sensing devices and systems incorporating such

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970007780A (ko) * 1995-07-18 1997-02-21 제프리 엘. 포만 액정 표시 장치의 구동 장치 및 방법
KR19980063421A (ko) * 1996-12-10 1998-10-07 구자홍 정전기 방지용 액정 표시 패널의 구조 및 그 운영 방법

Also Published As

Publication number Publication date
CN1182484C (zh) 2004-12-29
KR20010050098A (ko) 2001-06-15
CN1285568A (zh) 2001-02-28
JP4531219B2 (ja) 2010-08-25
TW501069B (en) 2002-09-01
JP2001076130A (ja) 2001-03-23

Similar Documents

Publication Publication Date Title
KR960013023B1 (ko) 감지회로를 갖춘 독출출력회로
JP3863215B2 (ja) シフトレジスタ
US5194862A (en) Touch sensor array systems and display systems incorporating such
KR101462149B1 (ko) 터치센서, 이를 갖는 액정표시패널 및 터치센서의 센싱방법
TWI229295B (en) Electrostatic capacity detection apparatus and fingerprint crosscheck apparatus using the same
TW424207B (en) Fingerprint sensing devices and systems incorporating such
KR100687553B1 (ko) 광센서, 광센서의 판독 방법, 매트릭스형 광센서 회로, 및전자 기기
US6049357A (en) Image pickup apparatus including signal accumulating cells
KR100767648B1 (ko) 용량성 박막 트랜지스터 어레이의 작동 방법
US6198654B1 (en) Ferroelectric memory device and method of reading data therefrom
US8411075B2 (en) Large area electronic sheet and pixel circuits with disordered semiconductors for sensor actuator interface
US12267045B2 (en) Weak-signal reading circuit for sensor
JPH0412675B2 (enrdf_load_stackoverflow)
EP1398791A2 (en) Ferroelectric memory and method for driving the same
US20030128571A1 (en) Negative voltage generating circuit
US20090115760A1 (en) Field-Through Compensation Circuit and Display Device
KR20040044117A (ko) 화상 판독 장치 및 화상 판독 방법
JP4946486B2 (ja) 検出装置の駆動方法、検出装置、電気光学装置および電子機器
US20060133133A1 (en) Semiconductor device
TWI455105B (zh) 顯示面板
US11227137B2 (en) Sensor pixel and fingerprint sensing sensor including the same
JP4882825B2 (ja) 検出装置、その駆動方法、および電子機器
JPS6129496A (ja) 半導体記憶装置
US20240135157A1 (en) Neural network circuit with delay line
JP3425945B2 (ja) 表面形状認識センサ装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20120919

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20130924

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20140923

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20150918

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20160921

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20170919

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20180920

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20191011

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20191011

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000