TW501069B - Method of operating capacitive thin film transistor arrays - Google Patents

Method of operating capacitive thin film transistor arrays Download PDF

Info

Publication number
TW501069B
TW501069B TW089115927A TW89115927A TW501069B TW 501069 B TW501069 B TW 501069B TW 089115927 A TW089115927 A TW 089115927A TW 89115927 A TW89115927 A TW 89115927A TW 501069 B TW501069 B TW 501069B
Authority
TW
Taiwan
Prior art keywords
array
charge
capacitor
tft
capacitors
Prior art date
Application number
TW089115927A
Other languages
English (en)
Chinese (zh)
Inventor
Michael Gillis Kane
Hongjin Kim
Original Assignee
Thomson Licensing Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Licensing Sa filed Critical Thomson Licensing Sa
Application granted granted Critical
Publication of TW501069B publication Critical patent/TW501069B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04166—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Human Computer Interaction (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Image Input (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
TW089115927A 1999-08-18 2000-08-08 Method of operating capacitive thin film transistor arrays TW501069B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37692599A 1999-08-18 1999-08-18

Publications (1)

Publication Number Publication Date
TW501069B true TW501069B (en) 2002-09-01

Family

ID=23487062

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089115927A TW501069B (en) 1999-08-18 2000-08-08 Method of operating capacitive thin film transistor arrays

Country Status (4)

Country Link
JP (1) JP4531219B2 (enrdf_load_stackoverflow)
KR (1) KR100767648B1 (enrdf_load_stackoverflow)
CN (1) CN1182484C (enrdf_load_stackoverflow)
TW (1) TW501069B (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100473383B1 (ko) * 2002-07-19 2005-03-10 매그나칩 반도체 유한회사 정전용량식 지문감지센서의 단위화소 및 그를 이용한지문감지장치
KR100943271B1 (ko) * 2003-05-06 2010-02-23 삼성전자주식회사 지문 인식신호 처리장치
JP3741282B2 (ja) * 2003-07-28 2006-02-01 セイコーエプソン株式会社 入力装置、電子機器及び入力装置の駆動方法
CN104408441A (zh) * 2014-12-10 2015-03-11 杨鹏飞 基于tft薄膜晶体管的指纹识别传感器及其测量方法
CN105989350B (zh) * 2015-03-05 2019-11-22 上海箩箕技术有限公司 像素单元、结构、结构阵列、读出电路及控制方法
US11838022B2 (en) * 2019-06-17 2023-12-05 Microsoft Technology Licensing, Llc Cryogenic-CMOS interface for controlling qubits

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175446A (en) * 1991-02-14 1992-12-29 Thomson, S.A. Demultiplexer including a three-state gate
US5225959A (en) * 1991-10-15 1993-07-06 Xerox Corporation Capacitive tactile sensor array and method for sensing pressure with the array
JP3110980B2 (ja) * 1995-07-18 2000-11-20 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 液晶表示装置の駆動装置及び方法
GB9608747D0 (en) * 1996-04-26 1996-07-03 Philips Electronics Nv Fingerprint sensing devices and systems incorporating such
US5973658A (en) * 1996-12-10 1999-10-26 Lg Electronics, Inc. Liquid crystal display panel having a static electricity prevention circuit and a method of operating the same
GB9708559D0 (en) * 1997-04-29 1997-06-18 Philips Electronics Nv Fingerprint sensing devices and systems incorporating such

Also Published As

Publication number Publication date
CN1182484C (zh) 2004-12-29
KR20010050098A (ko) 2001-06-15
KR100767648B1 (ko) 2007-10-17
CN1285568A (zh) 2001-02-28
JP4531219B2 (ja) 2010-08-25
JP2001076130A (ja) 2001-03-23

Similar Documents

Publication Publication Date Title
US5386543A (en) Matrix display device with light sensing function and time-shared amplifier
TW403886B (en) Fingerprint sensing devices and systems incorporating such
KR101979463B1 (ko) 강유전체 커패시터를 사용한 아날로그 메모리
KR100983524B1 (ko) 광감지 패널과, 이를 갖는 광감지 장치 및 이의 구동 방법
KR101462149B1 (ko) 터치센서, 이를 갖는 액정표시패널 및 터치센서의 센싱방법
US20060114247A1 (en) Apparatus for measuring a capacitance and sensor array
US6411727B1 (en) Fingerprint sensing devices and systems incorporating such
KR960013023B1 (ko) 감지회로를 갖춘 독출출력회로
TWI421746B (zh) 觸控面板
TWI403933B (zh) 液晶顯示面板、限波型比較器
US20150212650A1 (en) Touch detecting circuit and semiconductor integrated circuit using the same
KR101617791B1 (ko) 터치센서 및 이를 갖는 액정표시장치
CN101430628B (zh) 触控式面板及其控制方法
GB2447983A (en) Electrochromic display apparatus and method for operating said display apparatus
WO2003008899A1 (fr) Appareil de detection de capacite electrostatique et appareil utilise dans la comparaison d'empreintes digitales
CN101726890A (zh) 内嵌电容式感应输入显示装置
KR20100008668A (ko) 터치센서 및 이를 갖는 액정표시장치
CN102375623A (zh) 光感应式触控面板的光感应单元及其控制方法
TW501069B (en) Method of operating capacitive thin film transistor arrays
JP3696176B2 (ja) 撮像装置
CN114035353A (zh) 一种在tft基板上确定光照区域的装置
WO2022011790A1 (zh) 一种传感器微弱信号读取电路
US20050163351A1 (en) Semiconductor fingerprint sensing apparatus with shielding unit
US11227137B2 (en) Sensor pixel and fingerprint sensing sensor including the same
JP3425945B2 (ja) 表面形状認識センサ装置

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees