KR100724782B1 - 반도체 발광 다이오드 및 그 제조방법 - Google Patents

반도체 발광 다이오드 및 그 제조방법 Download PDF

Info

Publication number
KR100724782B1
KR100724782B1 KR1020060017648A KR20060017648A KR100724782B1 KR 100724782 B1 KR100724782 B1 KR 100724782B1 KR 1020060017648 A KR1020060017648 A KR 1020060017648A KR 20060017648 A KR20060017648 A KR 20060017648A KR 100724782 B1 KR100724782 B1 KR 100724782B1
Authority
KR
South Korea
Prior art keywords
light emitting
substrate
conductive layer
electrode
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020060017648A
Other languages
English (en)
Korean (ko)
Other versions
KR20060095470A (ko
Inventor
미키오 다지마
데츠지 모크
준지 사토
야스히로 가미이
아레이 니와
Original Assignee
산켄덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 산켄덴키 가부시키가이샤 filed Critical 산켄덴키 가부시키가이샤
Publication of KR20060095470A publication Critical patent/KR20060095470A/ko
Application granted granted Critical
Publication of KR100724782B1 publication Critical patent/KR100724782B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073—Shielding materials
    • H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Devices (AREA)
KR1020060017648A 2005-02-28 2006-02-23 반도체 발광 다이오드 및 그 제조방법 Expired - Fee Related KR100724782B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00052934 2005-02-28
JP2005052934A JP2006237467A (ja) 2005-02-28 2005-02-28 半導体発光素子及びその製造方法

Publications (2)

Publication Number Publication Date
KR20060095470A KR20060095470A (ko) 2006-08-31
KR100724782B1 true KR100724782B1 (ko) 2007-06-04

Family

ID=36931892

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060017648A Expired - Fee Related KR100724782B1 (ko) 2005-02-28 2006-02-23 반도체 발광 다이오드 및 그 제조방법

Country Status (4)

Country Link
US (1) US7446342B2 (enExample)
JP (1) JP2006237467A (enExample)
KR (1) KR100724782B1 (enExample)
TW (1) TW200633275A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010011074A3 (ko) * 2008-07-21 2010-04-22 엘지이노텍주식회사 발광 다이오드 및 그 제조방법. 그리고 발광 소자 및 그 발광 소자 제조방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100590775B1 (ko) * 2004-12-08 2006-06-19 한국전자통신연구원 실리콘 발광 소자
JP4765916B2 (ja) 2006-12-04 2011-09-07 サンケン電気株式会社 半導体発光素子
KR101039904B1 (ko) * 2010-01-15 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법
CN107210335B (zh) 2015-01-30 2019-07-05 欧司朗光电半导体有限公司 用于制造半导体组件的方法及半导体组件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980064846A (ko) * 1996-12-27 1998-10-07 빈센트 비. 인그라시아 가시 파장의 수직 공동 표면 발광 레이저
KR20190000980A (ko) * 2017-06-26 2019-01-04 이동원 퍼스널 헬스케어 시스템

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5406095A (en) * 1992-08-27 1995-04-11 Victor Company Of Japan, Ltd. Light emitting diode array and production method of the light emitting diode
JP3482709B2 (ja) * 1994-10-19 2004-01-06 株式会社デンソー 半導体装置
US6493368B1 (en) * 1999-07-21 2002-12-10 Agere Systems Inc. Lateral injection vertical cavity surface-emitting laser
JP4054631B2 (ja) 2001-09-13 2008-02-27 シャープ株式会社 半導体発光素子およびその製造方法、ｌｅｄランプ並びにｌｅｄ表示装置
JP4048056B2 (ja) * 2002-01-15 2008-02-13 シャープ株式会社 半導体発光素子及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980064846A (ko) * 1996-12-27 1998-10-07 빈센트 비. 인그라시아 가시 파장의 수직 공동 표면 발광 레이저
KR20190000980A (ko) * 2017-06-26 2019-01-04 이동원 퍼스널 헬스케어 시스템

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010011074A3 (ko) * 2008-07-21 2010-04-22 엘지이노텍주식회사 발광 다이오드 및 그 제조방법. 그리고 발광 소자 및 그 발광 소자 제조방법
US8823028B2 (en) 2008-07-21 2014-09-02 Lg Innotek Co., Ltd. Light emitting diode and method of manufacturing the same, and light emitting device and method of manufacturing the light emitting device
US9680064B2 (en) 2008-07-21 2017-06-13 Lg Innotek Co., Ltd. Light emitting diode and method of manufacturing the same, and light emitting device and method of manufacturing the light emitting device

Also Published As

Publication number Publication date
US7446342B2 (en) 2008-11-04
JP2006237467A (ja) 2006-09-07
KR20060095470A (ko) 2006-08-31
TWI323043B (enExample) 2010-04-01
TW200633275A (en) 2006-09-16
US20060193355A1 (en) 2006-08-31

Similar Documents

Publication Publication Date Title
JP5333382B2 (ja) 発光素子
CN113594331B (zh) 发光元件
CN102110754B (zh) 发光二极管
KR101627010B1 (ko) 반도체 발광소자
JP5777879B2 (ja) 発光素子、発光素子ユニットおよび発光素子パッケージ
CN104022202B (zh) 半导体发光元件
CN102169940B (zh) 半导体发光元件
CN105009311B (zh) 具有提高的光提取效率的发光二极管
KR100887139B1 (ko) 질화물 반도체 발광소자 및 제조방법
JP5217787B2 (ja) 半導体発光素子
CN102169942B (zh) 半导体发光元件
JP6024432B2 (ja) 半導体発光素子
JP2011071339A (ja) 発光素子
KR20120136814A (ko) 발광 소자 패키지
JP2014150245A (ja) 発光素子および発光素子パッケージ
JP6009041B2 (ja) 発光素子、発光素子ユニットおよび発光素子パッケージ
JP2012204373A (ja) 半導体発光素子
JP2014022607A (ja) 発光素子、発光素子ユニットおよび発光素子パッケージ
KR100724782B1 (ko) 반도체 발광 다이오드 및 그 제조방법
CN111799359B (zh) 发光元件
JP5151764B2 (ja) 発光素子及び発光素子の製造方法
JP2009238931A (ja) 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
JP6654219B2 (ja) 発光素子および発光素子パッケージ
JP2007081011A (ja) 半導体発光素子
KR101635908B1 (ko) 반도체 발광소자

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20110325

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20120529

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20120529

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000