KR100718781B1 - 콤팩트 픽셀 레이아웃을 갖는 ｃｍｏｓ 이미지 센서 - Google Patents

콤팩트 픽셀 레이아웃을 갖는 ｃｍｏｓ 이미지 센서 Download PDF

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Publication number
KR100718781B1
KR100718781B1 KR1020050051555A KR20050051555A KR100718781B1 KR 100718781 B1 KR100718781 B1 KR 100718781B1 KR 1020050051555 A KR1020050051555 A KR 1020050051555A KR 20050051555 A KR20050051555 A KR 20050051555A KR 100718781 B1 KR100718781 B1 KR 100718781B1
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South Korea
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region
transistor
active region
drive transistor
pixel
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English (en)
Korean (ko)
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KR20060131265A (ko
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히네체크 야노슬로브
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매그나칩 반도체 유한회사
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Priority to KR1020050051555A priority Critical patent/KR100718781B1/ko
Priority to US11/260,010 priority patent/US7700950B2/en
Priority to TW094138646A priority patent/TWI299902B/zh
Priority to CNB2005101260473A priority patent/CN100492649C/zh
Priority to JP2006017038A priority patent/JP5183875B2/ja
Publication of KR20060131265A publication Critical patent/KR20060131265A/ko
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Publication of KR100718781B1 publication Critical patent/KR100718781B1/ko
Assigned to 크로스텍 캐피탈, 엘엘씨 reassignment 크로스텍 캐피탈, 엘엘씨 권리의 전부이전등록 Assignors: 매그나칩 반도체 유한회사
Priority to US12/725,396 priority patent/US8044446B2/en
Priority to US13/240,300 priority patent/US8217437B2/en
Priority to JP2012129174A priority patent/JP5486639B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020050051555A 2005-06-15 2005-06-15 콤팩트 픽셀 레이아웃을 갖는 ｃｍｏｓ 이미지 센서 Expired - Fee Related KR100718781B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1020050051555A KR100718781B1 (ko) 2005-06-15 2005-06-15 콤팩트 픽셀 레이아웃을 갖는 ｃｍｏｓ 이미지 센서
US11/260,010 US7700950B2 (en) 2005-06-15 2005-10-26 Image sensor with compact pixel layout
TW094138646A TWI299902B (en) 2005-06-15 2005-11-03 Image sensor with compact pixel layout
CNB2005101260473A CN100492649C (zh) 2005-06-15 2005-11-24 具有紧凑像素布局的图像传感器
JP2006017038A JP5183875B2 (ja) 2005-06-15 2006-01-26 コンパクトなピクセルレイアウトを有するｃｍｏｓイメージセンサ
US12/725,396 US8044446B2 (en) 2005-06-15 2010-03-16 Image sensor with compact pixel layout
US13/240,300 US8217437B2 (en) 2005-06-15 2011-09-22 Image sensor with compact pixel layout
JP2012129174A JP5486639B2 (ja) 2005-06-15 2012-06-06 イメージセンサに関する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050051555A KR100718781B1 (ko) 2005-06-15 2005-06-15 콤팩트 픽셀 레이아웃을 갖는 ｃｍｏｓ 이미지 센서

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KR20060131265A KR20060131265A (ko) 2006-12-20
KR100718781B1 true KR100718781B1 (ko) 2007-05-16

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US (3) US7700950B2 (https=)
JP (2) JP5183875B2 (https=)
KR (1) KR100718781B1 (https=)
CN (1) CN100492649C (https=)
TW (1) TWI299902B (https=)

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KR101211085B1 (ko) 2008-12-03 2012-12-12 한국전자통신연구원 공유 포토 다이오드 이미지 센서

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TWI310987B (en) * 2005-07-09 2009-06-11 Samsung Electronics Co Ltd Image sensors including active pixel sensor arrays
KR100778854B1 (ko) * 2005-12-29 2007-11-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
KR100688589B1 (ko) * 2006-03-10 2007-03-02 삼성전자주식회사 필 팩터가 증대된 이미지 센서 및 그의 제조방법
KR100826941B1 (ko) * 2006-07-28 2008-05-02 엠텍비젼 주식회사 이미지 센서의 배치 구조
KR100829383B1 (ko) * 2006-12-27 2008-05-13 동부일렉트로닉스 주식회사 시모스 이미지 센서
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KR102017713B1 (ko) 2012-05-31 2019-09-03 삼성전자주식회사 시모스 이미지 센서
JP6231741B2 (ja) 2012-12-10 2017-11-15 キヤノン株式会社 固体撮像装置およびその製造方法
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KR102366416B1 (ko) 2014-08-11 2022-02-23 삼성전자주식회사 Cmos 이미지 센서
JP6213743B2 (ja) * 2014-10-08 2017-10-18 パナソニックＩｐマネジメント株式会社 撮像装置およびその駆動方法
KR101908286B1 (ko) * 2017-02-23 2018-10-16 (주)멜파스 커패시턴스 검출 방법 및 이를 이용하는 커패시턴스 검출 장치
KR102651393B1 (ko) * 2019-04-05 2024-03-27 에스케이하이닉스 주식회사 쉴딩 배선을 갖는 이미지 센서
KR20200118723A (ko) * 2019-04-08 2020-10-16 삼성전자주식회사 픽셀 그룹들을 포함하는 이미지 센서 및 이를 포함하는 전자 장치
CN113629090B (zh) * 2021-08-17 2024-10-15 思特威(上海)电子科技股份有限公司 一种像素、图像传感器及其制备方法、图像采集装置

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Also Published As

Publication number Publication date
US8044446B2 (en) 2011-10-25
TW200644228A (en) 2006-12-16
JP5486639B2 (ja) 2014-05-07
JP5183875B2 (ja) 2013-04-17
US20100171157A1 (en) 2010-07-08
US20120007157A1 (en) 2012-01-12
US7700950B2 (en) 2010-04-20
KR20060131265A (ko) 2006-12-20
JP2012199581A (ja) 2012-10-18
JP2006352070A (ja) 2006-12-28
CN1881599A (zh) 2006-12-20
CN100492649C (zh) 2009-05-27
TWI299902B (en) 2008-08-11
US8217437B2 (en) 2012-07-10
US20060284177A1 (en) 2006-12-21

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