KR100692267B1 - Ⅲ족 질화물 반도체 결정의 제조 방법 - Google Patents

Ⅲ족 질화물 반도체 결정의 제조 방법 Download PDF

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KR100692267B1
KR100692267B1 KR1020067010518A KR20067010518A KR100692267B1 KR 100692267 B1 KR100692267 B1 KR 100692267B1 KR 1020067010518 A KR1020067010518 A KR 1020067010518A KR 20067010518 A KR20067010518 A KR 20067010518A KR 100692267 B1 KR100692267 B1 KR 100692267B1
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group iii
substrate
nitride semiconductor
iii nitride
layer
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KR20060079259A (ko
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히사유키 미키
테츠오 사쿠라이
미네오 오쿠야마
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쇼와 덴코 가부시키가이샤
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  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Lasers (AREA)
KR1020067010518A 2002-02-15 2003-02-14 Ⅲ족 질화물 반도체 결정의 제조 방법 Expired - Lifetime KR100692267B1 (ko)

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JPJP-P-2002-00038841 2002-02-15
JP2002038841A JP3656606B2 (ja) 2002-02-15 2002-02-15 Ｉｉｉ族窒化物半導体結晶の製造方法

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KR20060079259A KR20060079259A (ko) 2006-07-05
KR100692267B1 true KR100692267B1 (ko) 2007-03-12

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KR1020047012652A Expired - Lifetime KR100659520B1 (ko) 2002-02-15 2003-02-14 Ⅲ족 질화물 반도체 결정의 제조 방법

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JP (1) JP3656606B2 (https=)
KR (2) KR100692267B1 (https=)
CN (1) CN100338733C (https=)
TW (1) TWI221638B (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI258873B (en) * 2004-01-26 2006-07-21 Showa Denko Kk Group III nitride semiconductor multilayer structure
JP2005244202A (ja) * 2004-01-26 2005-09-08 Showa Denko Kk Ｉｉｉ族窒化物半導体積層物
EP1709670B1 (en) 2004-01-26 2012-09-12 Showa Denko K.K. Group iii nitride semiconductor multilayer structure
JP4901115B2 (ja) 2004-03-04 2012-03-21 昭和電工株式会社 窒化ガリウム系半導体素子
US7436045B2 (en) 2004-03-04 2008-10-14 Showa Denko K.K. Gallium nitride-based semiconductor device
WO2005088738A1 (en) 2004-03-12 2005-09-22 Showa Denko K.K. Group iii nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same
TWI287880B (en) 2004-03-18 2007-10-01 Showa Denko Kk Group III nitride semiconductor light-emitting device and method of producing the same
WO2005109478A1 (en) * 2004-05-12 2005-11-17 Showa Denko K.K. P-type group iii nitride semiconductor and production method thereof
JP2006229219A (ja) * 2004-05-12 2006-08-31 Showa Denko Kk ＩＩＩ族窒化物ｐ型半導体およびその製造方法
JP4833616B2 (ja) 2004-09-13 2011-12-07 昭和電工株式会社 Ｉｉｉ族窒化物半導体の製造方法
US7652299B2 (en) 2005-02-14 2010-01-26 Showa Denko K.K. Nitride semiconductor light-emitting device and method for fabrication thereof
US7803648B2 (en) 2005-03-09 2010-09-28 Showa Denko K.K. Nitride semiconductor light-emitting device and method for fabrication thereof
US8076165B2 (en) 2005-04-01 2011-12-13 Sharp Kabushiki Kaisha Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method
JP4432827B2 (ja) 2005-04-26 2010-03-17 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子およびエピタキシャル基板
US7951617B2 (en) 2005-10-06 2011-05-31 Showa Denko K.K. Group III nitride semiconductor stacked structure and production method thereof
JP2007220745A (ja) * 2006-02-14 2007-08-30 Showa Denko Kk ＩＩＩ族窒化物ｐ型半導体の製造方法
WO2007129773A1 (ja) 2006-05-10 2007-11-15 Showa Denko K.K. Iii族窒化物化合物半導体積層構造体
JP5250856B2 (ja) 2006-06-13 2013-07-31 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
JP2009123718A (ja) 2007-01-16 2009-06-04 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ
JP4993627B2 (ja) * 2009-03-24 2012-08-08 古河機械金属株式会社 Ｉｉｉ族窒化物半導体層の製造方法
WO2012137309A1 (ja) * 2011-04-05 2012-10-11 住友電気工業株式会社 窒化物電子デバイスを作製する方法
JP5948698B2 (ja) * 2012-04-13 2016-07-06 パナソニックＩｐマネジメント株式会社 紫外発光素子およびその製造方法
JP6442957B2 (ja) * 2014-09-29 2018-12-26 日亜化学工業株式会社 窒化物半導体テンプレートの製造方法
CN107039250B (zh) * 2016-02-03 2018-08-21 中晟光电设备（上海）股份有限公司 一种在蓝宝石衬底上生长氮化镓材料的方法、氮化镓材料及其用途
JP7429522B2 (ja) * 2019-11-22 2024-02-08 住友化学株式会社 Ｉｉｉ族窒化物積層基板および半導体素子
JP7535399B2 (ja) * 2020-07-08 2024-08-16 住友化学株式会社 Ｉｉｉ族窒化物積層物、半導体素子およびｉｉｉ族窒化物積層物の製造方法

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Publication number Priority date Publication date Assignee Title
US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JPH08264886A (ja) * 1995-03-27 1996-10-11 Sumitomo Electric Ind Ltd 半導体レーザ素子およびその製造方法
JP3491492B2 (ja) * 1997-04-09 2004-01-26 松下電器産業株式会社 窒化ガリウム結晶の製造方法
CN1044840C (zh) * 1997-07-24 1999-08-25 北京大学 GaN/Al2O3复合材料在Ⅲ－V族氮化物外延生长中做衬底的方法
JP3615081B2 (ja) * 1999-03-30 2005-01-26 古河電気工業株式会社 ＧａＮ単結晶の作製方法
CN1313412A (zh) * 2000-03-10 2001-09-19 广镓光电股份有限公司 在单晶基板上形成第三族氮化物外延层方法、制品及设备
KR100319300B1 (ko) * 2000-03-23 2002-01-04 윤종용 이종접합구조의 양자점 버퍼층을 가지는 반도체 소자
JP3285341B2 (ja) * 2000-06-01 2002-05-27 士郎 酒井 窒化ガリウム系化合物半導体の製造方法

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Publication number Publication date
KR100659520B1 (ko) 2006-12-20
JP3656606B2 (ja) 2005-06-08
TWI221638B (en) 2004-10-01
KR20060079259A (ko) 2006-07-05
CN100338733C (zh) 2007-09-19
JP2003243302A (ja) 2003-08-29
KR20040079443A (ko) 2004-09-14
CN1639393A (zh) 2005-07-13
TW200307313A (en) 2003-12-01

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