KR100692267B1 - Ⅲ족 질화물 반도체 결정의 제조 방법 - Google Patents

Ⅲ족 질화물 반도체 결정의 제조 방법 Download PDF

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KR100692267B1
KR100692267B1 KR1020067010518A KR20067010518A KR100692267B1 KR 100692267 B1 KR100692267 B1 KR 100692267B1 KR 1020067010518 A KR1020067010518 A KR 1020067010518A KR 20067010518 A KR20067010518 A KR 20067010518A KR 100692267 B1 KR100692267 B1 KR 100692267B1
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group iii
substrate
nitride semiconductor
iii nitride
layer
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KR20060079259A (ko
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히사유키 미키
테츠오 사쿠라이
미네오 오쿠야마
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쇼와 덴코 가부시키가이샤
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  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020067010518A 2002-02-15 2003-02-14 Ⅲ족 질화물 반도체 결정의 제조 방법 Expired - Lifetime KR100692267B1 (ko)

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JPJP-P-2002-00038841 2002-02-15
JP2002038841A JP3656606B2 (ja) 2002-02-15 2002-02-15 Ｉｉｉ族窒化物半導体結晶の製造方法

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KR100692267B1 true KR100692267B1 (ko) 2007-03-12

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KR1020047012652A Expired - Lifetime KR100659520B1 (ko) 2002-02-15 2003-02-14 Ⅲ족 질화물 반도체 결정의 제조 방법

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JP (1) JP3656606B2 (cg-RX-API-DMAC7.html)
KR (2) KR100692267B1 (cg-RX-API-DMAC7.html)
CN (1) CN100338733C (cg-RX-API-DMAC7.html)
TW (1) TWI221638B (cg-RX-API-DMAC7.html)

Families Citing this family (26)

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Publication number Priority date Publication date Assignee Title
JP2005244202A (ja) * 2004-01-26 2005-09-08 Showa Denko Kk Ｉｉｉ族窒化物半導体積層物
WO2005071720A1 (en) 2004-01-26 2005-08-04 Showa Denko K.K. Group iii nitride semiconductor multilayer structure
TWI258873B (en) * 2004-01-26 2006-07-21 Showa Denko Kk Group III nitride semiconductor multilayer structure
US7436045B2 (en) 2004-03-04 2008-10-14 Showa Denko K.K. Gallium nitride-based semiconductor device
JP4901115B2 (ja) 2004-03-04 2012-03-21 昭和電工株式会社 窒化ガリウム系半導体素子
WO2005088738A1 (en) 2004-03-12 2005-09-22 Showa Denko K.K. Group iii nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same
WO2005091391A1 (en) 2004-03-18 2005-09-29 Showa Denko K.K. Group iii nitride semiconductor light-emitting device and method of producing the same
JP2006229219A (ja) * 2004-05-12 2006-08-31 Showa Denko Kk ＩＩＩ族窒化物ｐ型半導体およびその製造方法
US7655491B2 (en) 2004-05-12 2010-02-02 Showa Denko K.K. P-type Group III nitride semiconductor and production method thereof
JP4833616B2 (ja) 2004-09-13 2011-12-07 昭和電工株式会社 Ｉｉｉ族窒化物半導体の製造方法
US7652299B2 (en) 2005-02-14 2010-01-26 Showa Denko K.K. Nitride semiconductor light-emitting device and method for fabrication thereof
WO2006095566A1 (en) * 2005-03-09 2006-09-14 Showa Denko K.K. Nitride semiconductor light-emitting device and method for fabrication thereof
JP4707712B2 (ja) * 2005-04-01 2011-06-22 シャープ株式会社 ｐ型窒化物半導体の製造方法及びその方法を用いて作製された半導体装置
JP4432827B2 (ja) 2005-04-26 2010-03-17 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子およびエピタキシャル基板
US7951617B2 (en) 2005-10-06 2011-05-31 Showa Denko K.K. Group III nitride semiconductor stacked structure and production method thereof
JP2007220745A (ja) * 2006-02-14 2007-08-30 Showa Denko Kk ＩＩＩ族窒化物ｐ型半導体の製造方法
JPWO2007129773A1 (ja) 2006-05-10 2009-09-17 昭和電工株式会社 Ｉｉｉ族窒化物化合物半導体積層構造体
JP5250856B2 (ja) 2006-06-13 2013-07-31 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子の製造方法
JP2009123718A (ja) 2007-01-16 2009-06-04 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ
JP4993627B2 (ja) * 2009-03-24 2012-08-08 古河機械金属株式会社 Ｉｉｉ族窒化物半導体層の製造方法
DE112011105130T5 (de) * 2011-04-05 2014-01-02 Sumitomo Electric Industries Ltd. Verfahren zum Herstellen von elektronischen Nitrid-Bauelementen
JP5948698B2 (ja) * 2012-04-13 2016-07-06 パナソニックＩｐマネジメント株式会社 紫外発光素子およびその製造方法
JP6442957B2 (ja) * 2014-09-29 2018-12-26 日亜化学工業株式会社 窒化物半導体テンプレートの製造方法
CN107039250B (zh) * 2016-02-03 2018-08-21 中晟光电设备（上海）股份有限公司 一种在蓝宝石衬底上生长氮化镓材料的方法、氮化镓材料及其用途
JP7429522B2 (ja) * 2019-11-22 2024-02-08 住友化学株式会社 Ｉｉｉ族窒化物積層基板および半導体素子
JP7535399B2 (ja) * 2020-07-08 2024-08-16 住友化学株式会社 Ｉｉｉ族窒化物積層物、半導体素子およびｉｉｉ族窒化物積層物の製造方法

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US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
JPH08264886A (ja) * 1995-03-27 1996-10-11 Sumitomo Electric Ind Ltd 半導体レーザ素子およびその製造方法
JP3491492B2 (ja) * 1997-04-09 2004-01-26 松下電器産業株式会社 窒化ガリウム結晶の製造方法
CN1044840C (zh) * 1997-07-24 1999-08-25 北京大学 GaN/Al2O3复合材料在Ⅲ－V族氮化物外延生长中做衬底的方法
JP3615081B2 (ja) * 1999-03-30 2005-01-26 古河電気工業株式会社 ＧａＮ単結晶の作製方法
CN1313412A (zh) * 2000-03-10 2001-09-19 广镓光电股份有限公司 在单晶基板上形成第三族氮化物外延层方法、制品及设备
KR100319300B1 (ko) * 2000-03-23 2002-01-04 윤종용 이종접합구조의 양자점 버퍼층을 가지는 반도체 소자
JP3285341B2 (ja) * 2000-06-01 2002-05-27 士郎 酒井 窒化ガリウム系化合物半導体の製造方法

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CN1639393A (zh) 2005-07-13
JP2003243302A (ja) 2003-08-29
CN100338733C (zh) 2007-09-19
KR100659520B1 (ko) 2006-12-20
TW200307313A (en) 2003-12-01
TWI221638B (en) 2004-10-01
JP3656606B2 (ja) 2005-06-08
KR20060079259A (ko) 2006-07-05
KR20040079443A (ko) 2004-09-14

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