KR100687823B1 - 공간 분해 센서를 이용하여 웨이퍼의 균일성을 제어하는 방법 및 장치 - Google Patents

공간 분해 센서를 이용하여 웨이퍼의 균일성을 제어하는 방법 및 장치 Download PDF

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Publication number
KR100687823B1
KR100687823B1 KR1020027005132A KR20027005132A KR100687823B1 KR 100687823 B1 KR100687823 B1 KR 100687823B1 KR 1020027005132 A KR1020027005132 A KR 1020027005132A KR 20027005132 A KR20027005132 A KR 20027005132A KR 100687823 B1 KR100687823 B1 KR 100687823B1
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South Korea
Prior art keywords
process layer
thickness
wafer
autonomously
layer
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KR20020047258A (ko
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톱랙안소니제이.
밀러마이클엘.
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020027005132A 1999-10-20 2000-04-18 공간 분해 센서를 이용하여 웨이퍼의 균일성을 제어하는 방법 및 장치 Expired - Lifetime KR100687823B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/421,803 US6706541B1 (en) 1999-10-20 1999-10-20 Method and apparatus for controlling wafer uniformity using spatially resolved sensors
US09/421,803 1999-10-20

Publications (2)

Publication Number Publication Date
KR20020047258A KR20020047258A (ko) 2002-06-21
KR100687823B1 true KR100687823B1 (ko) 2007-02-28

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KR1020027005132A Expired - Lifetime KR100687823B1 (ko) 1999-10-20 2000-04-18 공간 분해 센서를 이용하여 웨이퍼의 균일성을 제어하는 방법 및 장치

Country Status (6)

Country Link
US (1) US6706541B1 (https=)
EP (1) EP1222679B1 (https=)
JP (1) JP2003512519A (https=)
KR (1) KR100687823B1 (https=)
DE (1) DE60033166T2 (https=)
WO (1) WO2001029873A1 (https=)

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US7067440B1 (en) 2001-08-24 2006-06-27 Novellus Systems, Inc. Gap fill for high aspect ratio structures
US20040016402A1 (en) * 2002-07-26 2004-01-29 Walther Steven R. Methods and apparatus for monitoring plasma parameters in plasma doping systems
US7402257B1 (en) * 2002-07-30 2008-07-22 Advanced Micro Devices, Inc. Plasma state monitoring to control etching processes and across-wafer uniformity, and system for performing same
US6922603B1 (en) * 2002-09-26 2005-07-26 Lam Research Corporation System and method for quantifying uniformity patterns for tool development and monitoring
US7122485B1 (en) 2002-12-09 2006-10-17 Novellus Systems, Inc. Deposition profile modification through process chemistry
US6770852B1 (en) * 2003-02-27 2004-08-03 Lam Research Corporation Critical dimension variation compensation across a wafer by means of local wafer temperature control
US6902646B2 (en) * 2003-08-14 2005-06-07 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
US7163896B1 (en) * 2003-12-10 2007-01-16 Novellus Systems, Inc. Biased H2 etch process in deposition-etch-deposition gap fill
US7476621B1 (en) * 2003-12-10 2009-01-13 Novellus Systems, Inc. Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill
US7344996B1 (en) 2005-06-22 2008-03-18 Novellus Systems, Inc. Helium-based etch process in deposition-etch-deposition gap fill
US7018855B2 (en) * 2003-12-24 2006-03-28 Lam Research Corporation Process controls for improved wafer uniformity using integrated or standalone metrology
US7878145B2 (en) * 2004-06-02 2011-02-01 Varian Semiconductor Equipment Associates, Inc. Monitoring plasma ion implantation systems for fault detection and process control
CN1972780B (zh) * 2004-06-21 2010-09-08 株式会社荏原制作所 抛光设备和抛光方法
US7217658B1 (en) 2004-09-07 2007-05-15 Novellus Systems, Inc. Process modulation to prevent structure erosion during gap fill
US7176039B1 (en) 2004-09-21 2007-02-13 Novellus Systems, Inc. Dynamic modification of gap fill process characteristics
US7109499B2 (en) * 2004-11-05 2006-09-19 Varian Semiconductor Equipment Associates, Inc. Apparatus and methods for two-dimensional ion beam profiling
US7381451B1 (en) 2004-11-17 2008-06-03 Novellus Systems, Inc. Strain engineering—HDP thin film with tensile stress for FEOL and other applications
US7211525B1 (en) 2005-03-16 2007-05-01 Novellus Systems, Inc. Hydrogen treatment enhanced gap fill
US7482245B1 (en) 2006-06-20 2009-01-27 Novellus Systems, Inc. Stress profile modulation in STI gap fill
CN101511539B (zh) * 2006-09-12 2012-08-22 株式会社荏原制作所 研磨装置及研磨方法
US8133797B2 (en) * 2008-05-16 2012-03-13 Novellus Systems, Inc. Protective layer to enable damage free gap fill
JP2012504752A (ja) * 2008-10-01 2012-02-23 ピーター ヴォルターズ ゲーエムベーハー 円盤状加工物の厚さを測定する方法
US8537020B2 (en) * 2008-12-23 2013-09-17 Honeywell International Inc. Visual indicator of gas sensor impairment
US20120021136A1 (en) * 2010-07-20 2012-01-26 Varian Semiconductor Equipment Associates, Inc. System and method for controlling plasma deposition uniformity
DE102012101717A1 (de) 2012-03-01 2013-09-05 Aixtron Se Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung
KR102291659B1 (ko) * 2013-12-22 2021-08-18 어플라이드 머티어리얼스, 인코포레이티드 증착을 위한 모니터링 시스템 및 그의 동작 방법
CN111164743B (zh) * 2017-09-26 2025-06-17 朗姆研究公司 用于脉宽调制的剂量控制的系统及方法
CN117637554B (zh) * 2024-01-24 2024-05-17 北京北方华创微电子装备有限公司 晶圆刻蚀或沉积及模型获取方法、半导体工艺设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07316811A (ja) * 1994-05-23 1995-12-05 Hitachi Ltd 多点温度モニタによる温度制御方法及び半導体製造装置
WO1997004478A2 (en) * 1995-07-19 1997-02-06 Chung Chan Plasma treatment apparatus for large area substrates

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DE3004149A1 (de) * 1980-02-05 1981-08-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zur reproduzierbaren herstellung metallischer schichten
JPS60245778A (ja) 1984-05-21 1985-12-05 Hitachi Ltd 薄膜形成装置
JPS62260078A (ja) * 1986-05-02 1987-11-12 Hitachi Ltd 膜厚変動量測定器
JP2773294B2 (ja) * 1989-09-22 1998-07-09 富士通株式会社 エッチング方法
JPH03281780A (ja) * 1990-03-30 1991-12-12 Hitachi Ltd Ｃｖｄ装置
JPH08172054A (ja) * 1994-12-19 1996-07-02 Mitsubishi Electric Corp プラズマｃｖｄ方法、その装置およびそれを用いた半導体装置の製法
US6162488A (en) * 1996-05-14 2000-12-19 Boston University Method for closed loop control of chemical vapor deposition process
US5937142A (en) 1996-07-11 1999-08-10 Cvc Products, Inc. Multi-zone illuminator for rapid thermal processing
US5983906A (en) * 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
US6071811A (en) * 1997-02-26 2000-06-06 Applied Materials, Inc. Deposition of titanium nitride films having improved uniformity
US6123766A (en) * 1997-05-16 2000-09-26 Applied Materials, Inc. Method and apparatus for achieving temperature uniformity of a substrate
JPH11222673A (ja) 1998-01-30 1999-08-17 Hoya Corp スパッタリング装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07316811A (ja) * 1994-05-23 1995-12-05 Hitachi Ltd 多点温度モニタによる温度制御方法及び半導体製造装置
WO1997004478A2 (en) * 1995-07-19 1997-02-06 Chung Chan Plasma treatment apparatus for large area substrates

Also Published As

Publication number Publication date
EP1222679A1 (en) 2002-07-17
DE60033166D1 (de) 2007-03-15
KR20020047258A (ko) 2002-06-21
US6706541B1 (en) 2004-03-16
EP1222679B1 (en) 2007-01-24
JP2003512519A (ja) 2003-04-02
WO2001029873A1 (en) 2001-04-26
DE60033166T2 (de) 2007-11-08

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