JP2003512519A - 空間的に分解されたセンサを用いてウェハの均一性を制御するための方法および装置 - Google Patents

空間的に分解されたセンサを用いてウェハの均一性を制御するための方法および装置

Info

Publication number
JP2003512519A
JP2003512519A JP2001531122A JP2001531122A JP2003512519A JP 2003512519 A JP2003512519 A JP 2003512519A JP 2001531122 A JP2001531122 A JP 2001531122A JP 2001531122 A JP2001531122 A JP 2001531122A JP 2003512519 A JP2003512519 A JP 2003512519A
Authority
JP
Japan
Prior art keywords
layer
process layer
control
wafer
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001531122A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003512519A5 (https=
Inventor
トプラック，アンソニー・ジェイ
ミラー，マイケル・エル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2003512519A publication Critical patent/JP2003512519A/ja
Publication of JP2003512519A5 publication Critical patent/JP2003512519A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2001531122A 1999-10-20 2000-04-18 空間的に分解されたセンサを用いてウェハの均一性を制御するための方法および装置 Pending JP2003512519A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/421,803 US6706541B1 (en) 1999-10-20 1999-10-20 Method and apparatus for controlling wafer uniformity using spatially resolved sensors
US09/421,803 1999-10-20
PCT/US2000/010364 WO2001029873A1 (en) 1999-10-20 2000-04-18 Method and apparatus for controlling wafer uniformity using spatially resolved sensors

Publications (2)

Publication Number Publication Date
JP2003512519A true JP2003512519A (ja) 2003-04-02
JP2003512519A5 JP2003512519A5 (https=) 2007-04-19

Family

ID=23672101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001531122A Pending JP2003512519A (ja) 1999-10-20 2000-04-18 空間的に分解されたセンサを用いてウェハの均一性を制御するための方法および装置

Country Status (6)

Country Link
US (1) US6706541B1 (https=)
EP (1) EP1222679B1 (https=)
JP (1) JP2003512519A (https=)
KR (1) KR100687823B1 (https=)
DE (1) DE60033166T2 (https=)
WO (1) WO2001029873A1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006519497A (ja) * 2003-02-27 2006-08-24 ラム　リサーチ　コーポレーション 局所的なウェーハの温度調節によるウェーハ全体における微細寸法のばらつき補正
JP2007517400A (ja) * 2003-12-24 2007-06-28 ラム　リサーチ　コーポレーション 統合又は独立計測を用いる改善されたウェーハ均一性のための処理制御方法及び装置
US7822500B2 (en) 2004-06-21 2010-10-26 Ebara Corporation Polishing apparatus and polishing method
JP2012504752A (ja) * 2008-10-01 2012-02-23 ピーター ヴォルターズ ゲーエムベーハー 円盤状加工物の厚さを測定する方法
JP2020095274A (ja) * 2013-12-22 2020-06-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 堆積用監視システム及びその操作方法
JP2020535666A (ja) * 2017-09-26 2020-12-03 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ パルス幅変調されたドーズ制御のためのシステムおよび方法

Families Citing this family (22)

* Cited by examiner, † Cited by third party
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US7067440B1 (en) 2001-08-24 2006-06-27 Novellus Systems, Inc. Gap fill for high aspect ratio structures
US20040016402A1 (en) * 2002-07-26 2004-01-29 Walther Steven R. Methods and apparatus for monitoring plasma parameters in plasma doping systems
US7402257B1 (en) * 2002-07-30 2008-07-22 Advanced Micro Devices, Inc. Plasma state monitoring to control etching processes and across-wafer uniformity, and system for performing same
US6922603B1 (en) * 2002-09-26 2005-07-26 Lam Research Corporation System and method for quantifying uniformity patterns for tool development and monitoring
US7122485B1 (en) 2002-12-09 2006-10-17 Novellus Systems, Inc. Deposition profile modification through process chemistry
US6902646B2 (en) * 2003-08-14 2005-06-07 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
US7163896B1 (en) * 2003-12-10 2007-01-16 Novellus Systems, Inc. Biased H2 etch process in deposition-etch-deposition gap fill
US7476621B1 (en) * 2003-12-10 2009-01-13 Novellus Systems, Inc. Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill
US7344996B1 (en) 2005-06-22 2008-03-18 Novellus Systems, Inc. Helium-based etch process in deposition-etch-deposition gap fill
US7878145B2 (en) * 2004-06-02 2011-02-01 Varian Semiconductor Equipment Associates, Inc. Monitoring plasma ion implantation systems for fault detection and process control
US7217658B1 (en) 2004-09-07 2007-05-15 Novellus Systems, Inc. Process modulation to prevent structure erosion during gap fill
US7176039B1 (en) 2004-09-21 2007-02-13 Novellus Systems, Inc. Dynamic modification of gap fill process characteristics
US7109499B2 (en) * 2004-11-05 2006-09-19 Varian Semiconductor Equipment Associates, Inc. Apparatus and methods for two-dimensional ion beam profiling
US7381451B1 (en) 2004-11-17 2008-06-03 Novellus Systems, Inc. Strain engineering—HDP thin film with tensile stress for FEOL and other applications
US7211525B1 (en) 2005-03-16 2007-05-01 Novellus Systems, Inc. Hydrogen treatment enhanced gap fill
US7482245B1 (en) 2006-06-20 2009-01-27 Novellus Systems, Inc. Stress profile modulation in STI gap fill
CN101511539B (zh) * 2006-09-12 2012-08-22 株式会社荏原制作所 研磨装置及研磨方法
US8133797B2 (en) * 2008-05-16 2012-03-13 Novellus Systems, Inc. Protective layer to enable damage free gap fill
US8537020B2 (en) * 2008-12-23 2013-09-17 Honeywell International Inc. Visual indicator of gas sensor impairment
US20120021136A1 (en) * 2010-07-20 2012-01-26 Varian Semiconductor Equipment Associates, Inc. System and method for controlling plasma deposition uniformity
DE102012101717A1 (de) 2012-03-01 2013-09-05 Aixtron Se Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung
CN117637554B (zh) * 2024-01-24 2024-05-17 北京北方华创微电子装备有限公司 晶圆刻蚀或沉积及模型获取方法、半导体工艺设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60245778A (ja) * 1984-05-21 1985-12-05 Hitachi Ltd 薄膜形成装置
JPS62260078A (ja) * 1986-05-02 1987-11-12 Hitachi Ltd 膜厚変動量測定器
JPH03107482A (ja) * 1989-09-22 1991-05-07 Fujitsu Ltd エッチング方法
JPH03281780A (ja) * 1990-03-30 1991-12-12 Hitachi Ltd Ｃｖｄ装置
JPH08172054A (ja) * 1994-12-19 1996-07-02 Mitsubishi Electric Corp プラズマｃｖｄ方法、その装置およびそれを用いた半導体装置の製法

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DE3004149A1 (de) * 1980-02-05 1981-08-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zur reproduzierbaren herstellung metallischer schichten
JPH07316811A (ja) 1994-05-23 1995-12-05 Hitachi Ltd 多点温度モニタによる温度制御方法及び半導体製造装置
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US6162488A (en) * 1996-05-14 2000-12-19 Boston University Method for closed loop control of chemical vapor deposition process
US5937142A (en) 1996-07-11 1999-08-10 Cvc Products, Inc. Multi-zone illuminator for rapid thermal processing
US5983906A (en) * 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
US6071811A (en) * 1997-02-26 2000-06-06 Applied Materials, Inc. Deposition of titanium nitride films having improved uniformity
US6123766A (en) * 1997-05-16 2000-09-26 Applied Materials, Inc. Method and apparatus for achieving temperature uniformity of a substrate
JPH11222673A (ja) 1998-01-30 1999-08-17 Hoya Corp スパッタリング装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60245778A (ja) * 1984-05-21 1985-12-05 Hitachi Ltd 薄膜形成装置
JPS62260078A (ja) * 1986-05-02 1987-11-12 Hitachi Ltd 膜厚変動量測定器
JPH03107482A (ja) * 1989-09-22 1991-05-07 Fujitsu Ltd エッチング方法
JPH03281780A (ja) * 1990-03-30 1991-12-12 Hitachi Ltd Ｃｖｄ装置
JPH08172054A (ja) * 1994-12-19 1996-07-02 Mitsubishi Electric Corp プラズマｃｖｄ方法、その装置およびそれを用いた半導体装置の製法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006519497A (ja) * 2003-02-27 2006-08-24 ラム　リサーチ　コーポレーション 局所的なウェーハの温度調節によるウェーハ全体における微細寸法のばらつき補正
JP2007517400A (ja) * 2003-12-24 2007-06-28 ラム　リサーチ　コーポレーション 統合又は独立計測を用いる改善されたウェーハ均一性のための処理制御方法及び装置
US7822500B2 (en) 2004-06-21 2010-10-26 Ebara Corporation Polishing apparatus and polishing method
US8112169B2 (en) 2004-06-21 2012-02-07 Ebara Corporation Polishing apparatus and polishing method
JP2012504752A (ja) * 2008-10-01 2012-02-23 ピーター ヴォルターズ ゲーエムベーハー 円盤状加工物の厚さを測定する方法
JP2020095274A (ja) * 2013-12-22 2020-06-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 堆積用監視システム及びその操作方法
JP7116753B2 (ja) 2013-12-22 2022-08-10 アプライド マテリアルズ インコーポレイテッド 堆積用監視システム及びその操作方法
JP2020535666A (ja) * 2017-09-26 2020-12-03 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ パルス幅変調されたドーズ制御のためのシステムおよび方法
JP7421482B2 (ja) 2017-09-26 2024-01-24 ラム リサーチ コーポレーション パルス幅変調されたドーズ制御のためのシステムおよび方法
US12215421B2 (en) 2017-09-26 2025-02-04 Lam Research Corporation Systems and methods for pulse width modulated dose control

Also Published As

Publication number Publication date
EP1222679A1 (en) 2002-07-17
DE60033166D1 (de) 2007-03-15
KR20020047258A (ko) 2002-06-21
US6706541B1 (en) 2004-03-16
KR100687823B1 (ko) 2007-02-28
EP1222679B1 (en) 2007-01-24
WO2001029873A1 (en) 2001-04-26
DE60033166T2 (de) 2007-11-08

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