DE60033166T2 - Verfahren und gerät zur steuerung der behandlungsgleichmässigkeit von wafern mittels räumlich aufgelöster sensoren - Google Patents

Verfahren und gerät zur steuerung der behandlungsgleichmässigkeit von wafern mittels räumlich aufgelöster sensoren Download PDF

Info

Publication number
DE60033166T2
DE60033166T2 DE60033166T DE60033166T DE60033166T2 DE 60033166 T2 DE60033166 T2 DE 60033166T2 DE 60033166 T DE60033166 T DE 60033166T DE 60033166 T DE60033166 T DE 60033166T DE 60033166 T2 DE60033166 T2 DE 60033166T2
Authority
DE
Germany
Prior art keywords
process control
layer
surface uniformity
sensor
changing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60033166T
Other languages
German (de)
English (en)
Other versions
DE60033166D1 (de
Inventor
J. Anthony Austin TOPRAC
L. Michael Cedar Park MILLER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of DE60033166D1 publication Critical patent/DE60033166D1/de
Application granted granted Critical
Publication of DE60033166T2 publication Critical patent/DE60033166T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE60033166T 1999-10-20 2000-04-18 Verfahren und gerät zur steuerung der behandlungsgleichmässigkeit von wafern mittels räumlich aufgelöster sensoren Expired - Lifetime DE60033166T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/421,803 US6706541B1 (en) 1999-10-20 1999-10-20 Method and apparatus for controlling wafer uniformity using spatially resolved sensors
US421803 1999-10-20
PCT/US2000/010364 WO2001029873A1 (en) 1999-10-20 2000-04-18 Method and apparatus for controlling wafer uniformity using spatially resolved sensors

Publications (2)

Publication Number Publication Date
DE60033166D1 DE60033166D1 (de) 2007-03-15
DE60033166T2 true DE60033166T2 (de) 2007-11-08

Family

ID=23672101

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60033166T Expired - Lifetime DE60033166T2 (de) 1999-10-20 2000-04-18 Verfahren und gerät zur steuerung der behandlungsgleichmässigkeit von wafern mittels räumlich aufgelöster sensoren

Country Status (6)

Country Link
US (1) US6706541B1 (https=)
EP (1) EP1222679B1 (https=)
JP (1) JP2003512519A (https=)
KR (1) KR100687823B1 (https=)
DE (1) DE60033166T2 (https=)
WO (1) WO2001029873A1 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067440B1 (en) 2001-08-24 2006-06-27 Novellus Systems, Inc. Gap fill for high aspect ratio structures
US20040016402A1 (en) * 2002-07-26 2004-01-29 Walther Steven R. Methods and apparatus for monitoring plasma parameters in plasma doping systems
US7402257B1 (en) * 2002-07-30 2008-07-22 Advanced Micro Devices, Inc. Plasma state monitoring to control etching processes and across-wafer uniformity, and system for performing same
US6922603B1 (en) * 2002-09-26 2005-07-26 Lam Research Corporation System and method for quantifying uniformity patterns for tool development and monitoring
US7122485B1 (en) 2002-12-09 2006-10-17 Novellus Systems, Inc. Deposition profile modification through process chemistry
US6770852B1 (en) * 2003-02-27 2004-08-03 Lam Research Corporation Critical dimension variation compensation across a wafer by means of local wafer temperature control
US6902646B2 (en) * 2003-08-14 2005-06-07 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
US7163896B1 (en) * 2003-12-10 2007-01-16 Novellus Systems, Inc. Biased H2 etch process in deposition-etch-deposition gap fill
US7476621B1 (en) * 2003-12-10 2009-01-13 Novellus Systems, Inc. Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill
US7344996B1 (en) 2005-06-22 2008-03-18 Novellus Systems, Inc. Helium-based etch process in deposition-etch-deposition gap fill
US7018855B2 (en) * 2003-12-24 2006-03-28 Lam Research Corporation Process controls for improved wafer uniformity using integrated or standalone metrology
US7878145B2 (en) * 2004-06-02 2011-02-01 Varian Semiconductor Equipment Associates, Inc. Monitoring plasma ion implantation systems for fault detection and process control
CN1972780B (zh) * 2004-06-21 2010-09-08 株式会社荏原制作所 抛光设备和抛光方法
US7217658B1 (en) 2004-09-07 2007-05-15 Novellus Systems, Inc. Process modulation to prevent structure erosion during gap fill
US7176039B1 (en) 2004-09-21 2007-02-13 Novellus Systems, Inc. Dynamic modification of gap fill process characteristics
US7109499B2 (en) * 2004-11-05 2006-09-19 Varian Semiconductor Equipment Associates, Inc. Apparatus and methods for two-dimensional ion beam profiling
US7381451B1 (en) 2004-11-17 2008-06-03 Novellus Systems, Inc. Strain engineering—HDP thin film with tensile stress for FEOL and other applications
US7211525B1 (en) 2005-03-16 2007-05-01 Novellus Systems, Inc. Hydrogen treatment enhanced gap fill
US7482245B1 (en) 2006-06-20 2009-01-27 Novellus Systems, Inc. Stress profile modulation in STI gap fill
CN101511539B (zh) * 2006-09-12 2012-08-22 株式会社荏原制作所 研磨装置及研磨方法
US8133797B2 (en) * 2008-05-16 2012-03-13 Novellus Systems, Inc. Protective layer to enable damage free gap fill
JP2012504752A (ja) * 2008-10-01 2012-02-23 ピーター ヴォルターズ ゲーエムベーハー 円盤状加工物の厚さを測定する方法
US8537020B2 (en) * 2008-12-23 2013-09-17 Honeywell International Inc. Visual indicator of gas sensor impairment
US20120021136A1 (en) * 2010-07-20 2012-01-26 Varian Semiconductor Equipment Associates, Inc. System and method for controlling plasma deposition uniformity
DE102012101717A1 (de) 2012-03-01 2013-09-05 Aixtron Se Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung
KR102291659B1 (ko) * 2013-12-22 2021-08-18 어플라이드 머티어리얼스, 인코포레이티드 증착을 위한 모니터링 시스템 및 그의 동작 방법
CN111164743B (zh) * 2017-09-26 2025-06-17 朗姆研究公司 用于脉宽调制的剂量控制的系统及方法
CN117637554B (zh) * 2024-01-24 2024-05-17 北京北方华创微电子装备有限公司 晶圆刻蚀或沉积及模型获取方法、半导体工艺设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3004149A1 (de) * 1980-02-05 1981-08-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zur reproduzierbaren herstellung metallischer schichten
JPS60245778A (ja) 1984-05-21 1985-12-05 Hitachi Ltd 薄膜形成装置
JPS62260078A (ja) * 1986-05-02 1987-11-12 Hitachi Ltd 膜厚変動量測定器
JP2773294B2 (ja) * 1989-09-22 1998-07-09 富士通株式会社 エッチング方法
JPH03281780A (ja) * 1990-03-30 1991-12-12 Hitachi Ltd Ｃｖｄ装置
JPH07316811A (ja) 1994-05-23 1995-12-05 Hitachi Ltd 多点温度モニタによる温度制御方法及び半導体製造装置
JPH08172054A (ja) * 1994-12-19 1996-07-02 Mitsubishi Electric Corp プラズマｃｖｄ方法、その装置およびそれを用いた半導体装置の製法
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US6162488A (en) * 1996-05-14 2000-12-19 Boston University Method for closed loop control of chemical vapor deposition process
US5937142A (en) 1996-07-11 1999-08-10 Cvc Products, Inc. Multi-zone illuminator for rapid thermal processing
US5983906A (en) * 1997-01-24 1999-11-16 Applied Materials, Inc. Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
US6071811A (en) * 1997-02-26 2000-06-06 Applied Materials, Inc. Deposition of titanium nitride films having improved uniformity
US6123766A (en) * 1997-05-16 2000-09-26 Applied Materials, Inc. Method and apparatus for achieving temperature uniformity of a substrate
JPH11222673A (ja) 1998-01-30 1999-08-17 Hoya Corp スパッタリング装置

Also Published As

Publication number Publication date
EP1222679A1 (en) 2002-07-17
DE60033166D1 (de) 2007-03-15
KR20020047258A (ko) 2002-06-21
US6706541B1 (en) 2004-03-16
KR100687823B1 (ko) 2007-02-28
EP1222679B1 (en) 2007-01-24
JP2003512519A (ja) 2003-04-02
WO2001029873A1 (en) 2001-04-26

Similar Documents

Publication Publication Date Title
DE60033166T2 (de) Verfahren und gerät zur steuerung der behandlungsgleichmässigkeit von wafern mittels räumlich aufgelöster sensoren
DE3213239C2 (https=)
DE19907497C2 (de) Vorrichtung und Verfahren zur Wärmebehandlung von Substraten
DE60104705T2 (de) Verbesserte regelung mit adaptives abtastverfahren zur halbleiterherstellung
WO2013127891A1 (de) Verfahren und vorrichtung zur regelung der oberflächentemperatur eines suszeptors einer substratbeschichtungseinrichtung
DE69811742T2 (de) Vorrichtung und verfahren zur steuerung der herstellung diskreter elemente in der halbleitertechnologie mit hilfe modellgestützter prädiktiver regelung
DE69126724T2 (de) Vorrichtung zur Dampfphasenabscheidung
EP1335997B1 (de) Verfahren und vorrichtung zur temperatursteuerung der oberflächentemperaturen von substraten in einem cvd-reaktor
DE69635816T2 (de) Verfahren zum Herstellen einer Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen
DE69811577T2 (de) Reaktor und Verfahren zum Behandlung eines Halbleitersubstrats
DE2152943B2 (de) Verfahren zum Abtragen von Material
DE102013114412A1 (de) Vorrichtung und Verfahren zur Regelung der Temperatur in einer Prozesskammer eines CVD-Reaktors unter Verwendung zweier Temperatursensoreinrichtungen
WO2002045135A2 (de) Verfahren zum thermischen behandeln von substraten
EP1297398B1 (de) Verfahren und vorrichtung zum thermischen behandeln von objekten
DE112016004604B4 (de) Dampfphasenwachstumsraten-Messvorrichtung, Dampfphasenwachstumsvorrichtung, und Wachstumsdetektionsverfahren
DE102018205188A1 (de) Wachstumsratenmessvorrichtung und Wachstumsratenmessverfahren
WO2016116373A1 (de) Vorrichtung und verfahren zum thermischen behandeln von substraten
EP1390561A1 (de) Verfahren und vorrichtung zum abscheiden von schichten
DE102004055449B4 (de) Verfahren und Vorrichtung zum thermischen Behandeln von Substraten
DE10345376B4 (de) Verfahren und System zum automatischen Steuern einer Stromverteilung einer Mehrfachanodenanordnung während des Plattierens eines Metalls auf eine Substratoberfläche
DE10234956B4 (de) Verfahren zum Steuern des chemisch mechanischen Polierens von gestapelten Schichten mit einer Oberflächentopologie
DE69838634T2 (de) Mechanismus um gleichzeitig zwei seiten wasserabweisend zu machen
WO1999013468A1 (de) Verfahren zur regelung eines beschichtungsvorgangs
DE4018802A1 (de) System zum einstellen von analysenbedingungen fuer eine thermische analyse eines fluids in einer vorrichtng
DE60127693T2 (de) Iterative lernaktualisierung für batchverfahrensbearbeitung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition