KR100687334B1 - 박막트랜지스터의 제조방법 - Google Patents
박막트랜지스터의 제조방법 Download PDFInfo
- Publication number
- KR100687334B1 KR100687334B1 KR1020000087530A KR20000087530A KR100687334B1 KR 100687334 B1 KR100687334 B1 KR 100687334B1 KR 1020000087530 A KR1020000087530 A KR 1020000087530A KR 20000087530 A KR20000087530 A KR 20000087530A KR 100687334 B1 KR100687334 B1 KR 100687334B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- titanium
- molybdenum
- aluminum
- thin film
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 title abstract description 19
- 239000010936 titanium Substances 0.000 claims abstract description 47
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 44
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 39
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000011733 molybdenum Substances 0.000 claims abstract description 35
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 35
- 238000005530 etching Methods 0.000 claims abstract description 19
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 14
- 239000011737 fluorine Substances 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims abstract description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 9
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 8
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 8
- 239000000460 chlorine Substances 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 abstract description 91
- 239000011241 protective layer Substances 0.000 abstract description 4
- 238000001312 dry etching Methods 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/0518—Molybdenum [Mo] as principal constituent
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- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
둘째, 상부층을 티타늄을 사용함으로써 보호막을 불소계 가스로 식각할 경우 상부층의 티타늄이 어택(attack)을 받지 않는다. 따라서 보호막을 식각할 때 상부 티타늄층을 오버식각하지 않아도 되기 대문에 티타늄의 두께를 줄일 수 있다.
Claims (1)
- 기판 상부에 게이트 전극 및 상기 게이트 전극을 덮는 게이트 절연막을 형성하는 단계;상기 게이트 절연막의 상부의 게이트 전극과 대응하는 부분에 비정질실리콘으로 이루어진 액티브층 및 도핑된 비정질실리콘으로 이루어진 오믹층을 순차적으로 형성하는 단계;상기 오믹층을 포함한 상기 기판의 전면에 몰리브덴층, 알루미늄층 및 티타늄층을 연속하여 순차적으로 형성하는 단계;상기 티타늄층과 상기 알루미늄층의 선택된 일부분을 염소계 가스로 식각하여 상기 알루미늄층의 하부에 형성된 상기 몰리브덴층의 표면을 노출시키는 단계; 및상기 노출된 몰리브덴층을 불소계 가스로 식각하여 상기 몰리브덴층, 상기 알루미늄층 및 상기 티타늄층으로 구성되고 채널부를 형성하도록 양편으로 서로 이격 배치된 소오스 전극 및 드레인 전극을 형성하는 단계;를 포함하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000087530A KR100687334B1 (ko) | 2000-12-30 | 2000-12-30 | 박막트랜지스터의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000087530A KR100687334B1 (ko) | 2000-12-30 | 2000-12-30 | 박막트랜지스터의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020057239A KR20020057239A (ko) | 2002-07-11 |
KR100687334B1 true KR100687334B1 (ko) | 2007-02-27 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000087530A KR100687334B1 (ko) | 2000-12-30 | 2000-12-30 | 박막트랜지스터의 제조방법 |
Country Status (1)
Country | Link |
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KR (1) | KR100687334B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070092455A (ko) | 2006-03-10 | 2007-09-13 | 삼성전자주식회사 | 표시 장치 및 그 제조 방법 |
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2000
- 2000-12-30 KR KR1020000087530A patent/KR100687334B1/ko active IP Right Grant
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Publication number | Publication date |
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KR20020057239A (ko) | 2002-07-11 |
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