KR100685738B1 - 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법 - Google Patents

절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법 Download PDF

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KR100685738B1
KR100685738B1 KR1020050072471A KR20050072471A KR100685738B1 KR 100685738 B1 KR100685738 B1 KR 100685738B1 KR 1020050072471 A KR1020050072471 A KR 1020050072471A KR 20050072471 A KR20050072471 A KR 20050072471A KR 100685738 B1 KR100685738 B1 KR 100685738B1
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South Korea
Prior art keywords
acid
composition
film
insulating material
substrate
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KR1020050072471A
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Korean (ko)
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KR20070017842A (ko
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이춘득
명중재
박면규
강동민
손병우
마사유키 다카시마
김영남
김현준
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삼성전자주식회사
동우 화인켐 주식회사
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Priority to KR1020050072471A priority Critical patent/KR100685738B1/ko
Priority to JP2006213669A priority patent/JP4904111B2/ja
Priority to US11/500,434 priority patent/US7566666B2/en
Publication of KR20070017842A publication Critical patent/KR20070017842A/ko
Application granted granted Critical
Publication of KR100685738B1 publication Critical patent/KR100685738B1/ko
Priority to US12/494,572 priority patent/US7842623B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/40—Cleaning for reclaiming

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
KR1020050072471A 2005-08-08 2005-08-08 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법 Expired - Fee Related KR100685738B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050072471A KR100685738B1 (ko) 2005-08-08 2005-08-08 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법
JP2006213669A JP4904111B2 (ja) 2005-08-08 2006-08-04 絶縁膜の除去方法
US11/500,434 US7566666B2 (en) 2005-08-08 2006-08-08 Composition for removing an insulation material and related methods
US12/494,572 US7842623B2 (en) 2005-08-08 2009-06-30 Composition for removing an insulation material and related methods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050072471A KR100685738B1 (ko) 2005-08-08 2005-08-08 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법

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KR20070017842A KR20070017842A (ko) 2007-02-13
KR100685738B1 true KR100685738B1 (ko) 2007-02-26

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US (2) US7566666B2 (https=)
JP (1) JP4904111B2 (https=)
KR (1) KR100685738B1 (https=)

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KR100706822B1 (ko) * 2005-10-17 2007-04-12 삼성전자주식회사 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법
EP1946358A4 (en) 2005-11-09 2009-03-04 Advanced Tech Materials COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS ON WHICH DIELECTRIC MATERIAL WITH LOW DIELECTRIC CONSTANT
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US20100019327A1 (en) * 2008-07-22 2010-01-28 Eun Jong Shin Semiconductor Device and Method of Fabricating the Same
JP5066152B2 (ja) * 2009-09-25 2012-11-07 株式会社東芝 洗浄システム
CN102668044A (zh) * 2009-11-18 2012-09-12 3M创新有限公司 用于ii-vi族半导体的新型湿蚀刻剂及方法
WO2012048079A2 (en) 2010-10-06 2012-04-12 Advanced Technology Materials, Inc. Composition and process for selectively etching metal nitrides
SG11201403556WA (en) 2011-12-28 2014-07-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
KR102338550B1 (ko) * 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
JP6329733B2 (ja) * 2013-06-28 2018-05-23 一般財団法人ファインセラミックスセンター 半導体ウェハのエッチング方法、半導体ウェハの製造方法および半導体ウェハの結晶欠陥検出方法
KR102338526B1 (ko) * 2013-07-31 2021-12-14 엔테그리스, 아이엔씨. Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형
US10689573B2 (en) 2016-12-26 2020-06-23 Mitsubishi Gas Chemical Company, Inc. Wet etching composition for substrate having SiN layer and Si layer and wet etching method using same
JP6319536B1 (ja) * 2016-12-26 2018-05-09 三菱瓦斯化学株式会社 ＳｉＮ層およびＳｉ層を有する基板用ウェットエッチング組成物およびこれを用いたウェットエッチング方法
JP7345966B2 (ja) * 2019-06-24 2023-09-19 株式会社ディスコ ウェーハの再生方法
CN111524790A (zh) * 2020-04-26 2020-08-11 上海华力集成电路制造有限公司 一种通过高温湿氧氧化法改善硅片可回收性的工艺方法
JP7779723B2 (ja) * 2021-12-17 2025-12-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
US12288693B2 (en) 2022-03-04 2025-04-29 Tokuyama Corporation Etching solution, method for treating substrate with the etching solution, and method for manufacturing semiconductor device
KR20240025484A (ko) 2022-08-18 2024-02-27 가부시끼가이샤 도꾸야마 에칭액, 그 에칭액을 사용한 실리콘 디바이스의 제조 방법 및 기판 처리 방법
TW202510061A (zh) * 2023-03-06 2025-03-01 日商東京威力科創股份有限公司 基板處理方法
CN119120026A (zh) * 2024-08-06 2024-12-13 湖北兴福电子材料股份有限公司 一种掺碳氮化硅/氧化硅的选择性蚀刻液

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Publication number Publication date
KR20070017842A (ko) 2007-02-13
US20070082497A1 (en) 2007-04-12
US7566666B2 (en) 2009-07-28
US20090305931A1 (en) 2009-12-10
US7842623B2 (en) 2010-11-30
JP2007049145A (ja) 2007-02-22
JP4904111B2 (ja) 2012-03-28

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