JP4904111B2 - 絶縁膜の除去方法 - Google Patents

絶縁膜の除去方法 Download PDF

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Publication number
JP4904111B2
JP4904111B2 JP2006213669A JP2006213669A JP4904111B2 JP 4904111 B2 JP4904111 B2 JP 4904111B2 JP 2006213669 A JP2006213669 A JP 2006213669A JP 2006213669 A JP2006213669 A JP 2006213669A JP 4904111 B2 JP4904111 B2 JP 4904111B2
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Japan
Prior art keywords
film
composition
insulating film
insulating material
silicon
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JP2006213669A
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English (en)
Japanese (ja)
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JP2007049145A5 (https=
JP2007049145A (ja
Inventor
春 得 李
重 在 明
勉 奎 朴
東 旻 姜
秉 宇 孫
正之 高島
永 南 金
賢 俊 金
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
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Publication of JP2007049145A5 publication Critical patent/JP2007049145A5/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/40—Cleaning for reclaiming

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
JP2006213669A 2005-08-08 2006-08-04 絶縁膜の除去方法 Active JP4904111B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050072471A KR100685738B1 (ko) 2005-08-08 2005-08-08 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법
KR10-2005-0072471 2005-08-08

Publications (3)

Publication Number Publication Date
JP2007049145A JP2007049145A (ja) 2007-02-22
JP2007049145A5 JP2007049145A5 (https=) 2009-09-17
JP4904111B2 true JP4904111B2 (ja) 2012-03-28

Family

ID=37851670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006213669A Active JP4904111B2 (ja) 2005-08-08 2006-08-04 絶縁膜の除去方法

Country Status (3)

Country Link
US (2) US7566666B2 (https=)
JP (1) JP4904111B2 (https=)
KR (1) KR100685738B1 (https=)

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KR100706822B1 (ko) * 2005-10-17 2007-04-12 삼성전자주식회사 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법
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US20100019327A1 (en) * 2008-07-22 2010-01-28 Eun Jong Shin Semiconductor Device and Method of Fabricating the Same
JP5066152B2 (ja) * 2009-09-25 2012-11-07 株式会社東芝 洗浄システム
CN102668044A (zh) * 2009-11-18 2012-09-12 3M创新有限公司 用于ii-vi族半导体的新型湿蚀刻剂及方法
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SG11201403556WA (en) 2011-12-28 2014-07-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
KR102338550B1 (ko) * 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
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KR102338526B1 (ko) * 2013-07-31 2021-12-14 엔테그리스, 아이엔씨. Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형
US10689573B2 (en) 2016-12-26 2020-06-23 Mitsubishi Gas Chemical Company, Inc. Wet etching composition for substrate having SiN layer and Si layer and wet etching method using same
JP6319536B1 (ja) * 2016-12-26 2018-05-09 三菱瓦斯化学株式会社 ＳｉＮ層およびＳｉ層を有する基板用ウェットエッチング組成物およびこれを用いたウェットエッチング方法
JP7345966B2 (ja) * 2019-06-24 2023-09-19 株式会社ディスコ ウェーハの再生方法
CN111524790A (zh) * 2020-04-26 2020-08-11 上海华力集成电路制造有限公司 一种通过高温湿氧氧化法改善硅片可回收性的工艺方法
JP7779723B2 (ja) * 2021-12-17 2025-12-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
US12288693B2 (en) 2022-03-04 2025-04-29 Tokuyama Corporation Etching solution, method for treating substrate with the etching solution, and method for manufacturing semiconductor device
KR20240025484A (ko) 2022-08-18 2024-02-27 가부시끼가이샤 도꾸야마 에칭액, 그 에칭액을 사용한 실리콘 디바이스의 제조 방법 및 기판 처리 방법
TW202510061A (zh) * 2023-03-06 2025-03-01 日商東京威力科創股份有限公司 基板處理方法
CN119120026A (zh) * 2024-08-06 2024-12-13 湖北兴福电子材料股份有限公司 一种掺碳氮化硅/氧化硅的选择性蚀刻液

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US7208325B2 (en) * 2005-01-18 2007-04-24 Applied Materials, Inc. Refreshing wafers having low-k dielectric materials
KR100685738B1 (ko) 2005-08-08 2007-02-26 삼성전자주식회사 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법

Also Published As

Publication number Publication date
KR20070017842A (ko) 2007-02-13
US20070082497A1 (en) 2007-04-12
KR100685738B1 (ko) 2007-02-26
US7566666B2 (en) 2009-07-28
US20090305931A1 (en) 2009-12-10
US7842623B2 (en) 2010-11-30
JP2007049145A (ja) 2007-02-22

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