KR100682643B1 - 게이트 전극 스택, 이를 포함하는 회로 디바이스 및 그 제조 방법 - Google Patents

게이트 전극 스택, 이를 포함하는 회로 디바이스 및 그 제조 방법 Download PDF

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Publication number
KR100682643B1
KR100682643B1 KR1020027009377A KR20027009377A KR100682643B1 KR 100682643 B1 KR100682643 B1 KR 100682643B1 KR 1020027009377 A KR1020027009377 A KR 1020027009377A KR 20027009377 A KR20027009377 A KR 20027009377A KR 100682643 B1 KR100682643 B1 KR 100682643B1
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South Korea
Prior art keywords
tungsten
film
amorphous
insulating film
polycrystalline
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Expired - Fee Related
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KR1020027009377A
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English (en)
Korean (ko)
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KR20020071959A (ko
Inventor
호쎄인티모시지.
가텍-로이아미야알.
자노티제이슨비.
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
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Publication of KR20020071959A publication Critical patent/KR20020071959A/ko
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Assigned to 글로벌파운드리즈 인크. reassignment 글로벌파운드리즈 인크. 권리의 전부이전등록 Assignors: 어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN
    • H10D64/0132—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN the conductor being a metallic silicide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020027009377A 2000-01-21 2000-08-16 게이트 전극 스택, 이를 포함하는 회로 디바이스 및 그 제조 방법 Expired - Fee Related KR100682643B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/489,169 US6284636B1 (en) 2000-01-21 2000-01-21 Tungsten gate method and apparatus
US09/489,169 2000-01-21

Publications (2)

Publication Number Publication Date
KR20020071959A KR20020071959A (ko) 2002-09-13
KR100682643B1 true KR100682643B1 (ko) 2007-02-15

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Family Applications (1)

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KR1020027009377A Expired - Fee Related KR100682643B1 (ko) 2000-01-21 2000-08-16 게이트 전극 스택, 이를 포함하는 회로 디바이스 및 그 제조 방법

Country Status (6)

Country Link
US (1) US6284636B1 (https=)
EP (1) EP1258033B1 (https=)
JP (1) JP2003520445A (https=)
KR (1) KR100682643B1 (https=)
DE (1) DE60037337T2 (https=)
WO (1) WO2001054177A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101415436B1 (ko) 2013-01-31 2014-07-04 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Ｆｉｎｆｅｔ 디바이스의 제조 방법

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US6548389B2 (en) * 2000-04-03 2003-04-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
DE10123510A1 (de) * 2001-05-15 2002-11-28 Infineon Technologies Ag Herstellungsverfahren für ein Halbleiterbauelement
US6933243B2 (en) * 2002-02-06 2005-08-23 Applied Materials, Inc. High selectivity and residue free process for metal on thin dielectric gate etch application
US6835659B2 (en) * 2002-06-04 2004-12-28 Micron Technology, Inc. Electrical coupling stack and processes for making same
US20040061190A1 (en) 2002-09-30 2004-04-01 International Business Machines Corporation Method and structure for tungsten gate metal surface treatment while preventing oxidation
KR100587686B1 (ko) * 2004-07-15 2006-06-08 삼성전자주식회사 질화 티타늄막 형성방법 및 이를 이용한 커패시터 제조방법
KR100939777B1 (ko) * 2007-11-30 2010-01-29 주식회사 하이닉스반도체 텅스텐막 형성방법 및 이를 이용한 반도체 소자의 배선형성방법
JP6222880B2 (ja) * 2014-09-24 2017-11-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、半導体装置およびプログラム
US10861701B2 (en) 2015-06-29 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof

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GB2061615A (en) 1979-10-25 1981-05-13 Gen Electric Composite conductors for integrated circuits
JPS584975A (ja) 1981-06-30 1983-01-12 Fujitsu Ltd 半導体装置の製造方法
FR2578272B1 (fr) * 1985-03-01 1987-05-22 Centre Nat Rech Scient Procede de formation sur un substrat d'une couche de siliciure de tungstene, utilisable notamment pour la realisation de couches d'interconnexion des circuits integres.
US5223455A (en) 1987-07-10 1993-06-29 Kabushiki Kaisha Toshiba Method of forming refractory metal film
US5071788A (en) 1988-02-18 1991-12-10 International Business Machines Corporation Method for depositing tungsten on silicon in a non-self-limiting CVD process and semiconductor device manufactured thereby
JP2844693B2 (ja) * 1989-07-13 1999-01-06 ソニー株式会社 高融点金属膜の形成方法
JPH03218637A (ja) * 1989-11-01 1991-09-26 Matsushita Electric Ind Co Ltd 電界効果型半導体装置とその製造方法
US5158903A (en) * 1989-11-01 1992-10-27 Matsushita Electric Industrial Co., Ltd. Method for producing a field-effect type semiconductor device
EP0498580A1 (en) 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Method for depositing a metal film containing aluminium by use of alkylaluminium halide
JPH04340766A (ja) * 1991-05-17 1992-11-27 Seiko Instr Inc 半導体装置およびその製造方法
JP2889430B2 (ja) * 1992-05-14 1999-05-10 シャープ株式会社 コンタクト部形成方法
JPH0637042A (ja) * 1992-07-20 1994-02-10 Hitachi Ltd 半導体集積回路装置及びその製造方法
JPH0669498A (ja) * 1992-08-20 1994-03-11 Matsushita Electron Corp 半導体装置およびその製造方法
GB9219281D0 (en) 1992-09-11 1992-10-28 Inmos Ltd Manufacture of semiconductor devices
JPH06291082A (ja) * 1993-04-06 1994-10-18 Nippon Steel Corp 半導体装置及びその製造方法
JPH07263674A (ja) 1994-03-17 1995-10-13 Fujitsu Ltd 電界効果型半導体装置とその製造方法
US5472896A (en) * 1994-11-14 1995-12-05 United Microelectronics Corp. Method for fabricating polycide gate MOSFET devices
JP2839076B2 (ja) 1995-05-11 1998-12-16 日本電気株式会社 半導体装置およびその製造方法
US5906866A (en) 1997-02-10 1999-05-25 Tokyo Electron Limited Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
US5795824A (en) 1997-08-28 1998-08-18 Novellus Systems, Inc. Method for nucleation of CVD tungsten films
US6066366A (en) 1998-07-22 2000-05-23 Applied Materials, Inc. Method for depositing uniform tungsten layers by CVD
US6037263A (en) 1998-11-05 2000-03-14 Vanguard International Semiconductor Corporation Plasma enhanced CVD deposition of tungsten and tungsten compounds

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101415436B1 (ko) 2013-01-31 2014-07-04 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Ｆｉｎｆｅｔ 디바이스의 제조 방법

Also Published As

Publication number Publication date
DE60037337D1 (de) 2008-01-17
DE60037337T2 (de) 2008-11-27
WO2001054177A1 (en) 2001-07-26
US6284636B1 (en) 2001-09-04
KR20020071959A (ko) 2002-09-13
JP2003520445A (ja) 2003-07-02
EP1258033A1 (en) 2002-11-20
EP1258033B1 (en) 2007-12-05

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