DE60037337T2 - Herstellung einer wolfram-gateelektrode - Google Patents

Herstellung einer wolfram-gateelektrode Download PDF

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Publication number
DE60037337T2
DE60037337T2 DE60037337T DE60037337T DE60037337T2 DE 60037337 T2 DE60037337 T2 DE 60037337T2 DE 60037337 T DE60037337 T DE 60037337T DE 60037337 T DE60037337 T DE 60037337T DE 60037337 T2 DE60037337 T2 DE 60037337T2
Authority
DE
Germany
Prior art keywords
tungsten
layer
gate electrode
amorphous
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60037337T
Other languages
German (de)
English (en)
Other versions
DE60037337D1 (de
Inventor
Timothy Z. Austin HOSSAIN
Amiya R. Austin GHATAK-ROY
Jason B. Austin ZANOTTI
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalFoundries Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of DE60037337D1 publication Critical patent/DE60037337D1/de
Application granted granted Critical
Publication of DE60037337T2 publication Critical patent/DE60037337T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN
    • H10D64/0132—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN the conductor being a metallic silicide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H10D64/668—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers the layer being a silicide, e.g. TiSi2

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE60037337T 2000-01-21 2000-08-16 Herstellung einer wolfram-gateelektrode Expired - Lifetime DE60037337T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/489,169 US6284636B1 (en) 2000-01-21 2000-01-21 Tungsten gate method and apparatus
US489169 2000-01-21
PCT/US2000/022505 WO2001054177A1 (en) 2000-01-21 2000-08-16 Tungsten gate electrode method and device

Publications (2)

Publication Number Publication Date
DE60037337D1 DE60037337D1 (de) 2008-01-17
DE60037337T2 true DE60037337T2 (de) 2008-11-27

Family

ID=23942694

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60037337T Expired - Lifetime DE60037337T2 (de) 2000-01-21 2000-08-16 Herstellung einer wolfram-gateelektrode

Country Status (6)

Country Link
US (1) US6284636B1 (https=)
EP (1) EP1258033B1 (https=)
JP (1) JP2003520445A (https=)
KR (1) KR100682643B1 (https=)
DE (1) DE60037337T2 (https=)
WO (1) WO2001054177A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548389B2 (en) * 2000-04-03 2003-04-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
DE10123510A1 (de) * 2001-05-15 2002-11-28 Infineon Technologies Ag Herstellungsverfahren für ein Halbleiterbauelement
US6933243B2 (en) * 2002-02-06 2005-08-23 Applied Materials, Inc. High selectivity and residue free process for metal on thin dielectric gate etch application
US6835659B2 (en) * 2002-06-04 2004-12-28 Micron Technology, Inc. Electrical coupling stack and processes for making same
US20040061190A1 (en) 2002-09-30 2004-04-01 International Business Machines Corporation Method and structure for tungsten gate metal surface treatment while preventing oxidation
KR100587686B1 (ko) * 2004-07-15 2006-06-08 삼성전자주식회사 질화 티타늄막 형성방법 및 이를 이용한 커패시터 제조방법
KR100939777B1 (ko) * 2007-11-30 2010-01-29 주식회사 하이닉스반도체 텅스텐막 형성방법 및 이를 이용한 반도체 소자의 배선형성방법
US9034716B2 (en) 2013-01-31 2015-05-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a FinFET device
JP6222880B2 (ja) * 2014-09-24 2017-11-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、半導体装置およびプログラム
US10861701B2 (en) 2015-06-29 2020-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2061615A (en) 1979-10-25 1981-05-13 Gen Electric Composite conductors for integrated circuits
JPS584975A (ja) 1981-06-30 1983-01-12 Fujitsu Ltd 半導体装置の製造方法
FR2578272B1 (fr) * 1985-03-01 1987-05-22 Centre Nat Rech Scient Procede de formation sur un substrat d'une couche de siliciure de tungstene, utilisable notamment pour la realisation de couches d'interconnexion des circuits integres.
US5223455A (en) 1987-07-10 1993-06-29 Kabushiki Kaisha Toshiba Method of forming refractory metal film
US5071788A (en) 1988-02-18 1991-12-10 International Business Machines Corporation Method for depositing tungsten on silicon in a non-self-limiting CVD process and semiconductor device manufactured thereby
JP2844693B2 (ja) * 1989-07-13 1999-01-06 ソニー株式会社 高融点金属膜の形成方法
JPH03218637A (ja) * 1989-11-01 1991-09-26 Matsushita Electric Ind Co Ltd 電界効果型半導体装置とその製造方法
US5158903A (en) * 1989-11-01 1992-10-27 Matsushita Electric Industrial Co., Ltd. Method for producing a field-effect type semiconductor device
EP0498580A1 (en) 1991-02-04 1992-08-12 Canon Kabushiki Kaisha Method for depositing a metal film containing aluminium by use of alkylaluminium halide
JPH04340766A (ja) * 1991-05-17 1992-11-27 Seiko Instr Inc 半導体装置およびその製造方法
JP2889430B2 (ja) * 1992-05-14 1999-05-10 シャープ株式会社 コンタクト部形成方法
JPH0637042A (ja) * 1992-07-20 1994-02-10 Hitachi Ltd 半導体集積回路装置及びその製造方法
JPH0669498A (ja) * 1992-08-20 1994-03-11 Matsushita Electron Corp 半導体装置およびその製造方法
GB9219281D0 (en) 1992-09-11 1992-10-28 Inmos Ltd Manufacture of semiconductor devices
JPH06291082A (ja) * 1993-04-06 1994-10-18 Nippon Steel Corp 半導体装置及びその製造方法
JPH07263674A (ja) 1994-03-17 1995-10-13 Fujitsu Ltd 電界効果型半導体装置とその製造方法
US5472896A (en) * 1994-11-14 1995-12-05 United Microelectronics Corp. Method for fabricating polycide gate MOSFET devices
JP2839076B2 (ja) 1995-05-11 1998-12-16 日本電気株式会社 半導体装置およびその製造方法
US5906866A (en) 1997-02-10 1999-05-25 Tokyo Electron Limited Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
US5795824A (en) 1997-08-28 1998-08-18 Novellus Systems, Inc. Method for nucleation of CVD tungsten films
US6066366A (en) 1998-07-22 2000-05-23 Applied Materials, Inc. Method for depositing uniform tungsten layers by CVD
US6037263A (en) 1998-11-05 2000-03-14 Vanguard International Semiconductor Corporation Plasma enhanced CVD deposition of tungsten and tungsten compounds

Also Published As

Publication number Publication date
DE60037337D1 (de) 2008-01-17
KR100682643B1 (ko) 2007-02-15
WO2001054177A1 (en) 2001-07-26
US6284636B1 (en) 2001-09-04
KR20020071959A (ko) 2002-09-13
JP2003520445A (ja) 2003-07-02
EP1258033A1 (en) 2002-11-20
EP1258033B1 (en) 2007-12-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GLOBALFOUNDRIES INC., GRAND CAYMAN, KY

8328 Change in the person/name/address of the agent

Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER,