KR100670226B1 - 비-부동 바디를 구비한 전계 효과 트랜지스터와 벌크실리콘 웨이퍼 상에 상기 전계 효과 트랜지스터를형성하는 방법 - Google Patents

비-부동 바디를 구비한 전계 효과 트랜지스터와 벌크실리콘 웨이퍼 상에 상기 전계 효과 트랜지스터를형성하는 방법 Download PDF

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KR100670226B1
KR100670226B1 KR1020017007803A KR20017007803A KR100670226B1 KR 100670226 B1 KR100670226 B1 KR 100670226B1 KR 1020017007803 A KR1020017007803 A KR 1020017007803A KR 20017007803 A KR20017007803 A KR 20017007803A KR 100670226 B1 KR100670226 B1 KR 100670226B1
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region
etching
undercut
semiconductor substrate
channel region
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KR20010089659A (ko
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주동-혁
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020017007803A 1999-10-20 2000-09-21 비-부동 바디를 구비한 전계 효과 트랜지스터와 벌크실리콘 웨이퍼 상에 상기 전계 효과 트랜지스터를형성하는 방법 Expired - Fee Related KR100670226B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/421,305 1999-10-20
US09/421,305 US6376286B1 (en) 1999-10-20 1999-10-20 Field effect transistor with non-floating body and method for forming same on a bulk silicon wafer

Publications (2)

Publication Number Publication Date
KR20010089659A KR20010089659A (ko) 2001-10-08
KR100670226B1 true KR100670226B1 (ko) 2007-01-17

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KR1020017007803A Expired - Fee Related KR100670226B1 (ko) 1999-10-20 2000-09-21 비-부동 바디를 구비한 전계 효과 트랜지스터와 벌크실리콘 웨이퍼 상에 상기 전계 효과 트랜지스터를형성하는 방법

Country Status (6)

Country Link
US (1) US6376286B1 (enExample)
EP (1) EP1173892A1 (enExample)
JP (1) JP2003512724A (enExample)
KR (1) KR100670226B1 (enExample)
TW (1) TW476138B (enExample)
WO (1) WO2001029897A1 (enExample)

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US8263462B2 (en) 2008-12-31 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Dielectric punch-through stoppers for forming FinFETs having dual fin heights
US8426268B2 (en) * 2009-02-03 2013-04-23 International Business Machines Corporation Embedded DRAM memory cell with additional patterning layer for improved strap formation
US8293616B2 (en) 2009-02-24 2012-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of fabrication of semiconductor devices with low capacitance
KR101640830B1 (ko) * 2009-08-17 2016-07-22 삼성전자주식회사 기판 구조체 및 그 제조 방법
US8648414B2 (en) * 2011-07-01 2014-02-11 Micron Technology, Inc. Semiconductor structures including bodies of semiconductor material, devices including such structures and related methods
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Also Published As

Publication number Publication date
US20020025636A1 (en) 2002-02-28
WO2001029897A1 (en) 2001-04-26
EP1173892A1 (en) 2002-01-23
US6376286B1 (en) 2002-04-23
TW476138B (en) 2002-02-11
JP2003512724A (ja) 2003-04-02
KR20010089659A (ko) 2001-10-08

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