TW476138B - Field effect transistor with non-floating body and method for forming same on a bulk silicon wafer - Google Patents

Field effect transistor with non-floating body and method for forming same on a bulk silicon wafer Download PDF

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Publication number
TW476138B
TW476138B TW089121771A TW89121771A TW476138B TW 476138 B TW476138 B TW 476138B TW 089121771 A TW089121771 A TW 089121771A TW 89121771 A TW89121771 A TW 89121771A TW 476138 B TW476138 B TW 476138B
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TW
Taiwan
Prior art keywords
region
substrate
patent application
central channel
source
Prior art date
Application number
TW089121771A
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English (en)
Chinese (zh)
Inventor
Dong-Hyuk Ju
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Advanced Micro Devices Inc
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Publication of TW476138B publication Critical patent/TW476138B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW089121771A 1999-10-20 2000-10-18 Field effect transistor with non-floating body and method for forming same on a bulk silicon wafer TW476138B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/421,305 US6376286B1 (en) 1999-10-20 1999-10-20 Field effect transistor with non-floating body and method for forming same on a bulk silicon wafer

Publications (1)

Publication Number Publication Date
TW476138B true TW476138B (en) 2002-02-11

Family

ID=23669987

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089121771A TW476138B (en) 1999-10-20 2000-10-18 Field effect transistor with non-floating body and method for forming same on a bulk silicon wafer

Country Status (6)

Country Link
US (1) US6376286B1 (enExample)
EP (1) EP1173892A1 (enExample)
JP (1) JP2003512724A (enExample)
KR (1) KR100670226B1 (enExample)
TW (1) TW476138B (enExample)
WO (1) WO2001029897A1 (enExample)

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US8106459B2 (en) 2008-05-06 2012-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs having dielectric punch-through stoppers
US8048723B2 (en) 2008-12-05 2011-11-01 Taiwan Semiconductor Manufacturing Company, Ltd. Germanium FinFETs having dielectric punch-through stoppers
US20090325359A1 (en) * 2008-06-30 2009-12-31 Chartered Semiconductor Manufacturing Ltd. Integrated circuit system employing a modified isolation structure
US8263462B2 (en) 2008-12-31 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. Dielectric punch-through stoppers for forming FinFETs having dual fin heights
US8426268B2 (en) * 2009-02-03 2013-04-23 International Business Machines Corporation Embedded DRAM memory cell with additional patterning layer for improved strap formation
US8293616B2 (en) 2009-02-24 2012-10-23 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of fabrication of semiconductor devices with low capacitance
KR101640830B1 (ko) * 2009-08-17 2016-07-22 삼성전자주식회사 기판 구조체 및 그 제조 방법
US8648414B2 (en) * 2011-07-01 2014-02-11 Micron Technology, Inc. Semiconductor structures including bodies of semiconductor material, devices including such structures and related methods
US9214932B2 (en) 2013-02-11 2015-12-15 Triquint Semiconductor, Inc. Body-biased switching device
US9203396B1 (en) 2013-02-22 2015-12-01 Triquint Semiconductor, Inc. Radio frequency switch device with source-follower
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Also Published As

Publication number Publication date
US20020025636A1 (en) 2002-02-28
WO2001029897A1 (en) 2001-04-26
EP1173892A1 (en) 2002-01-23
KR100670226B1 (ko) 2007-01-17
US6376286B1 (en) 2002-04-23
JP2003512724A (ja) 2003-04-02
KR20010089659A (ko) 2001-10-08

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