KR100657143B1 - 이미지 센서 및 그 제조 방법 - Google Patents

이미지 센서 및 그 제조 방법 Download PDF

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Publication number
KR100657143B1
KR100657143B1 KR1020050062301A KR20050062301A KR100657143B1 KR 100657143 B1 KR100657143 B1 KR 100657143B1 KR 1020050062301 A KR1020050062301 A KR 1020050062301A KR 20050062301 A KR20050062301 A KR 20050062301A KR 100657143 B1 KR100657143 B1 KR 100657143B1
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South Korea
Prior art keywords
epitaxial layer
image sensor
conductivity type
layer
manufacturing
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English (en)
Korean (ko)
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차한섭
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매그나칩 반도체 유한회사
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Priority to KR1020050062301A priority Critical patent/KR100657143B1/ko
Priority to US11/482,770 priority patent/US7508018B2/en
Priority to JP2006190892A priority patent/JP2007027730A/ja
Application granted granted Critical
Publication of KR100657143B1 publication Critical patent/KR100657143B1/ko
Priority to US12/382,729 priority patent/US7989245B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
KR1020050062301A 2005-07-11 2005-07-11 이미지 센서 및 그 제조 방법 Expired - Lifetime KR100657143B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050062301A KR100657143B1 (ko) 2005-07-11 2005-07-11 이미지 센서 및 그 제조 방법
US11/482,770 US7508018B2 (en) 2005-07-11 2006-07-10 Image sensor having a highly doped and shallow pinning layer
JP2006190892A JP2007027730A (ja) 2005-07-11 2006-07-11 イメージセンサ及びその製造方法
US12/382,729 US7989245B2 (en) 2005-07-11 2009-03-23 Method for fabricating image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050062301A KR100657143B1 (ko) 2005-07-11 2005-07-11 이미지 센서 및 그 제조 방법

Publications (1)

Publication Number Publication Date
KR100657143B1 true KR100657143B1 (ko) 2006-12-13

Family

ID=37617522

Family Applications (1)

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KR1020050062301A Expired - Lifetime KR100657143B1 (ko) 2005-07-11 2005-07-11 이미지 센서 및 그 제조 방법

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Country Link
US (2) US7508018B2 (enExample)
JP (1) JP2007027730A (enExample)
KR (1) KR100657143B1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101872775A (zh) * 2009-04-24 2010-10-27 美商豪威科技股份有限公司 用于减少串扰的多层图像传感器像素结构
KR20240084449A (ko) * 2022-12-06 2024-06-13 글로벌파운드리즈 유.에스. 인크. 진성 영역 측벽을 따라 절연체 층을 갖는 포토다이오드

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7064406B2 (en) * 2003-09-03 2006-06-20 Micron Technology, Inc. Supression of dark current in a photosensor for imaging
US7141836B1 (en) * 2005-05-31 2006-11-28 International Business Machines Corporation Pixel sensor having doped isolation structure sidewall
US20080299700A1 (en) * 2007-05-28 2008-12-04 Bang-Chiang Lan Method for fabricating photodiode
JP5400280B2 (ja) * 2007-06-07 2014-01-29 パナソニック株式会社 固体撮像装置
US20140312386A1 (en) * 2009-09-02 2014-10-23 Pixart Imaging Incorporation Optoelectronic device having photodiodes for different wavelengths and process for making same
US8247854B2 (en) * 2009-10-08 2012-08-21 Electronics And Telecommunications Research Institute CMOS image sensor
US20110169991A1 (en) * 2010-01-08 2011-07-14 Omnivision Technologies, Inc. Image sensor with epitaxially self-aligned photo sensors
JP5870478B2 (ja) * 2010-09-30 2016-03-01 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2012231026A (ja) 2011-04-26 2012-11-22 Toshiba Corp 固体撮像装置
FR3000605A1 (fr) * 2012-12-31 2014-07-04 St Microelectronics Crolles 2 Photocapteur adapte a la mesure de temps de vol
CN104517976B (zh) * 2013-09-30 2018-03-30 中芯国际集成电路制造(北京)有限公司 Cmos图像传感器的像素结构及其形成方法
CN114388536A (zh) * 2020-10-21 2022-04-22 格科微电子（上海）有限公司 图像传感器形成方法及图像传感器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812481A (ja) * 1981-07-15 1983-01-24 Toshiba Corp 固体撮像素子
JPH04355964A (ja) * 1990-12-21 1992-12-09 Mitsubishi Electric Corp 固体撮像装置及びその製造方法
JP2959460B2 (ja) * 1996-01-30 1999-10-06 日本電気株式会社 固体撮像装置
JP2751910B2 (ja) * 1996-02-28 1998-05-18 日本電気株式会社 半導体受光素子及びその製造方法
JP3782297B2 (ja) 2000-03-28 2006-06-07 株式会社東芝 固体撮像装置及びその製造方法
KR100388459B1 (ko) 2000-10-19 2003-06-25 주식회사 하이닉스반도체 포토다이오드 영역에 트렌치를 구비하는 이미지 센서 및그 제조 방법
KR100406537B1 (ko) * 2001-12-03 2003-11-20 주식회사 하이닉스반도체 반도체장치의 제조 방법
JP2003264283A (ja) * 2002-03-12 2003-09-19 Mitsubishi Electric Corp 半導体装置の製造方法及び半導体装置
JP4695824B2 (ja) * 2003-03-07 2011-06-08 富士電機ホールディングス株式会社 半導体ウエハの製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101872775A (zh) * 2009-04-24 2010-10-27 美商豪威科技股份有限公司 用于减少串扰的多层图像传感器像素结构
CN101872775B (zh) * 2009-04-24 2012-11-28 美商豪威科技股份有限公司 用于减少串扰的多层图像传感器像素结构
KR20240084449A (ko) * 2022-12-06 2024-06-13 글로벌파운드리즈 유.에스. 인크. 진성 영역 측벽을 따라 절연체 층을 갖는 포토다이오드
KR102863724B1 (ko) 2022-12-06 2025-09-25 글로벌파운드리즈 유.에스. 인크. 진성 영역 측벽을 따라 절연체 층을 갖는 포토다이오드

Also Published As

Publication number Publication date
US7989245B2 (en) 2011-08-02
US20090286345A1 (en) 2009-11-19
JP2007027730A (ja) 2007-02-01
US20070007562A1 (en) 2007-01-11
US7508018B2 (en) 2009-03-24

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