CN101872775B - 用于减少串扰的多层图像传感器像素结构 - Google Patents
用于减少串扰的多层图像传感器像素结构 Download PDFInfo
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- CN101872775B CN101872775B CN2010101592465A CN201010159246A CN101872775B CN 101872775 B CN101872775 B CN 101872775B CN 2010101592465 A CN2010101592465 A CN 2010101592465A CN 201010159246 A CN201010159246 A CN 201010159246A CN 101872775 B CN101872775 B CN 101872775B
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- 239000000758 substrate Substances 0.000 claims abstract description 65
- 239000002800 charge carrier Substances 0.000 claims abstract description 36
- 230000004888 barrier function Effects 0.000 claims description 54
- 239000012535 impurity Substances 0.000 claims description 50
- 230000005684 electric field Effects 0.000 claims description 40
- 238000003384 imaging method Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 3
- 230000005686 electrostatic field Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 238000000576 coating method Methods 0.000 description 25
- 239000011248 coating agent Substances 0.000 description 24
- 238000009792 diffusion process Methods 0.000 description 18
- 230000005611 electricity Effects 0.000 description 16
- 238000005036 potential barrier Methods 0.000 description 12
- 238000010276 construction Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 206010042772 syncope Diseases 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 206010019133 Hangover Diseases 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 208000024754 bloodshot eye Diseases 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 201000005111 ocular hyperemia Diseases 0.000 description 1
- 238000013404 process transfer Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/430,006 | 2009-04-24 | ||
US12/430,006 US7875918B2 (en) | 2009-04-24 | 2009-04-24 | Multilayer image sensor pixel structure for reducing crosstalk |
Publications (2)
Publication Number | Publication Date |
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CN101872775A CN101872775A (zh) | 2010-10-27 |
CN101872775B true CN101872775B (zh) | 2012-11-28 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101592465A Active CN101872775B (zh) | 2009-04-24 | 2010-04-26 | 用于减少串扰的多层图像传感器像素结构 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7875918B2 (zh) |
EP (1) | EP2244296B1 (zh) |
CN (1) | CN101872775B (zh) |
TW (1) | TWI416717B (zh) |
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JP2011108759A (ja) * | 2009-11-13 | 2011-06-02 | Canon Inc | 固体撮像装置 |
US20110198689A1 (en) * | 2010-02-17 | 2011-08-18 | Suku Kim | Semiconductor devices containing trench mosfets with superjunctions |
JP5697371B2 (ja) * | 2010-07-07 | 2015-04-08 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5885401B2 (ja) | 2010-07-07 | 2016-03-15 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5656484B2 (ja) | 2010-07-07 | 2015-01-21 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5751766B2 (ja) | 2010-07-07 | 2015-07-22 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5643555B2 (ja) | 2010-07-07 | 2014-12-17 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
JP5645513B2 (ja) | 2010-07-07 | 2014-12-24 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
CN102403256B (zh) * | 2010-09-08 | 2014-02-26 | 上海华虹宏力半导体制造有限公司 | 赝埋层及制造方法、深孔接触及三极管 |
CN102468310B (zh) * | 2010-11-17 | 2014-08-20 | 联咏科技股份有限公司 | 影像传感器 |
FR2974238A1 (fr) * | 2011-04-12 | 2012-10-19 | St Microelectronics Crolles 2 | Procede de realisation d'un capteur d'images a eclairement par la face arriere |
FR2974240A1 (fr) | 2011-04-12 | 2012-10-19 | St Microelectronics Crolles 2 | Capteur eclaire par la face arriere a isolement par jonction |
FR2974237A1 (fr) | 2011-04-12 | 2012-10-19 | St Microelectronics Crolles 2 | Capteur d'images a eclairement par la face arriere muni d'une electrode transparente |
FR2974239A1 (fr) * | 2011-04-12 | 2012-10-19 | St Microelectronics Crolles 2 | Procede de realisation d'un capteur d'images a eclairement par la face arriere |
US20120280109A1 (en) * | 2011-05-05 | 2012-11-08 | Omnivision Technologies, Inc. | Method, apparatus and system to provide conductivity for a substrate of an image sensing pixel |
CN102222678A (zh) * | 2011-06-22 | 2011-10-19 | 格科微电子(上海)有限公司 | Cmos图像传感器及其形成方法 |
JP2013012574A (ja) * | 2011-06-29 | 2013-01-17 | Toshiba Corp | 固体撮像装置および固体撮像装置の製造方法 |
US8853811B2 (en) * | 2011-11-07 | 2014-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor trench isolation with conformal doping |
US8652868B2 (en) * | 2012-03-01 | 2014-02-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Implanting method for forming photodiode |
KR102025718B1 (ko) * | 2012-05-15 | 2019-09-26 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US8686477B2 (en) * | 2012-07-25 | 2014-04-01 | Omnivision Technologies, Inc. | Ground contact structure for a low dark current CMOS pixel cell |
DE102013018789A1 (de) * | 2012-11-29 | 2014-06-05 | Infineon Technologies Ag | Steuern lichterzeugter Ladungsträger |
US9773824B2 (en) * | 2012-12-13 | 2017-09-26 | Cbrite Inc. | Active matrix light emitting diode array and projector display comprising it |
CN103022069B (zh) * | 2013-01-10 | 2015-07-29 | 中国科学院上海高等研究院 | 图像传感器 |
US11830954B2 (en) * | 2013-05-22 | 2023-11-28 | W&wsens Devices Inc. | Microstructure enhanced absorption photosensitive devices |
KR102246766B1 (ko) * | 2013-06-20 | 2021-04-29 | 스트라티오 인코포레이티드 | Cmos 센서용 게이트-제어 전하 변조 디바이스 |
JP6294721B2 (ja) * | 2014-03-25 | 2018-03-14 | エイブリック株式会社 | イメージセンサ |
TW201614817A (en) * | 2014-10-03 | 2016-04-16 | Powerchip Technology Corp | Image sensor with deep well structure and fabrication method thereof |
US9584744B2 (en) | 2015-06-23 | 2017-02-28 | Semiconductor Components Industries, Llc | Image sensors with voltage-biased trench isolation structures |
CN107293559A (zh) * | 2016-04-05 | 2017-10-24 | 格科微电子(上海)有限公司 | Rgbir图像传感器 |
CN109964315A (zh) * | 2016-08-31 | 2019-07-02 | G射线瑞士公司 | 包括跨越键合界面的电荷输送的电磁辐射检测器 |
EP3422424B1 (en) * | 2017-06-27 | 2022-09-07 | ams AG | Semiconductor photodetector device with protection against ambient back light |
IT201700122669A1 (it) * | 2017-10-27 | 2019-04-27 | Lfoundry Srl | Sensore integrato di radiazione ionizzante e di particelle ionizzanti |
US10418402B2 (en) * | 2017-11-30 | 2019-09-17 | Stmicroelectronics (Research & Development) Limited | Near ultraviolet photocell |
US11105928B2 (en) | 2018-02-23 | 2021-08-31 | Artilux, Inc. | Light-sensing apparatus and light-sensing method thereof |
WO2020052992A1 (de) | 2018-09-10 | 2020-03-19 | pmdtechnologies ag | Lichtlaufzeitpixel und lichtlaufzeitsensor mit entsprechenden pixel |
US11018168B2 (en) | 2018-09-20 | 2021-05-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor with improved timing resolution and photon detection probability |
TWI692861B (zh) * | 2019-03-14 | 2020-05-01 | 晶相光電股份有限公司 | 影像感測器及其製造方法 |
CN110061023A (zh) * | 2019-04-30 | 2019-07-26 | 德淮半导体有限公司 | 图像传感器及其制造方法 |
US20220357433A1 (en) * | 2019-06-18 | 2022-11-10 | Ams International Ag | Time of flight sensors with light directing elements |
KR20210133739A (ko) * | 2020-04-29 | 2021-11-08 | 에스케이하이닉스 주식회사 | 이미지 센서 |
KR20220094846A (ko) * | 2020-12-29 | 2022-07-06 | 에스케이하이닉스 주식회사 | 이미지 센싱 장치 |
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2009
- 2009-04-24 US US12/430,006 patent/US7875918B2/en active Active
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2010
- 2010-04-21 EP EP10250805.8A patent/EP2244296B1/en active Active
- 2010-04-23 TW TW099112883A patent/TWI416717B/zh active
- 2010-04-26 CN CN2010101592465A patent/CN101872775B/zh active Active
- 2010-12-14 US US12/967,759 patent/US8330195B2/en active Active
Patent Citations (2)
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KR20060112385A (ko) * | 2005-04-26 | 2006-11-01 | 매그나칩 반도체 유한회사 | 씨모스 이미지 센서의 제조 방법 |
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Also Published As
Publication number | Publication date |
---|---|
EP2244296A3 (en) | 2012-06-13 |
US8330195B2 (en) | 2012-12-11 |
TW201101474A (en) | 2011-01-01 |
EP2244296A2 (en) | 2010-10-27 |
US20110085067A1 (en) | 2011-04-14 |
CN101872775A (zh) | 2010-10-27 |
EP2244296B1 (en) | 2014-01-08 |
TWI416717B (zh) | 2013-11-21 |
US20100271524A1 (en) | 2010-10-28 |
US7875918B2 (en) | 2011-01-25 |
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