KR100653337B1 - 집적 회로 트렌치 형상 및 그 제조 방법 - Google Patents

집적 회로 트렌치 형상 및 그 제조 방법 Download PDF

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Publication number
KR100653337B1
KR100653337B1 KR1020017001891A KR20017001891A KR100653337B1 KR 100653337 B1 KR100653337 B1 KR 100653337B1 KR 1020017001891 A KR1020017001891 A KR 1020017001891A KR 20017001891 A KR20017001891 A KR 20017001891A KR 100653337 B1 KR100653337 B1 KR 100653337B1
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South Korea
Prior art keywords
microcrystals
wafer
trench
solvent
microcrystalline
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Expired - Fee Related
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KR1020017001891A
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English (en)
Korean (ko)
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KR20010072473A (ko
Inventor
아베리 엔. 골드스타인
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아베리 엔. 골드스타인
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Application granted granted Critical
Publication of KR100653337B1 publication Critical patent/KR100653337B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020017001891A 1998-08-14 1999-08-13 집적 회로 트렌치 형상 및 그 제조 방법 Expired - Fee Related KR100653337B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US9661698P 1998-08-14 1998-08-14
US60/096,616 1998-08-14
US09/373,295 1999-08-12
US09/373,295 US6277740B1 (en) 1998-08-14 1999-08-12 Integrated circuit trenched features and method of producing same

Publications (2)

Publication Number Publication Date
KR20010072473A KR20010072473A (ko) 2001-07-31
KR100653337B1 true KR100653337B1 (ko) 2006-12-01

Family

ID=26791884

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017001891A Expired - Fee Related KR100653337B1 (ko) 1998-08-14 1999-08-13 집적 회로 트렌치 형상 및 그 제조 방법

Country Status (5)

Country Link
US (3) US6277740B1 (https=)
JP (1) JP2002522920A (https=)
KR (1) KR100653337B1 (https=)
AU (1) AU5560499A (https=)
WO (1) WO2000010197A1 (https=)

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Also Published As

Publication number Publication date
US6774036B2 (en) 2004-08-10
US6277740B1 (en) 2001-08-21
JP2002522920A (ja) 2002-07-23
US20020006723A1 (en) 2002-01-17
US20040023488A1 (en) 2004-02-05
AU5560499A (en) 2000-03-06
KR20010072473A (ko) 2001-07-31
WO2000010197A1 (en) 2000-02-24

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