JP2002522920A - 集積回路トレンチ構造およびその作製方法 - Google Patents

集積回路トレンチ構造およびその作製方法

Info

Publication number
JP2002522920A
JP2002522920A JP2000565562A JP2000565562A JP2002522920A JP 2002522920 A JP2002522920 A JP 2002522920A JP 2000565562 A JP2000565562 A JP 2000565562A JP 2000565562 A JP2000565562 A JP 2000565562A JP 2002522920 A JP2002522920 A JP 2002522920A
Authority
JP
Japan
Prior art keywords
nanocrystals
wafer
nanocrystal
copper
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000565562A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002522920A5 (https=
Inventor
エイヴァリー エヌ ゴールドスタイン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of JP2002522920A publication Critical patent/JP2002522920A/ja
Publication of JP2002522920A5 publication Critical patent/JP2002522920A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2000565562A 1998-08-14 1999-08-13 集積回路トレンチ構造およびその作製方法 Pending JP2002522920A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US9661698P 1998-08-14 1998-08-14
US60/096,616 1998-08-14
US09/373,295 1999-08-12
US09/373,295 US6277740B1 (en) 1998-08-14 1999-08-12 Integrated circuit trenched features and method of producing same
PCT/US1999/018430 WO2000010197A1 (en) 1998-08-14 1999-08-13 Integrated circuit trenched features and method of producing same

Publications (2)

Publication Number Publication Date
JP2002522920A true JP2002522920A (ja) 2002-07-23
JP2002522920A5 JP2002522920A5 (https=) 2006-09-21

Family

ID=26791884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000565562A Pending JP2002522920A (ja) 1998-08-14 1999-08-13 集積回路トレンチ構造およびその作製方法

Country Status (5)

Country Link
US (3) US6277740B1 (https=)
JP (1) JP2002522920A (https=)
KR (1) KR100653337B1 (https=)
AU (1) AU5560499A (https=)
WO (1) WO2000010197A1 (https=)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001513697A (ja) 1997-02-24 2001-09-04 スーペリア マイクロパウダーズ リミテッド ライアビリティ カンパニー エアロゾル法及び装置、粒子製品、並びに該粒子製品から製造される電子装置
US6277740B1 (en) * 1998-08-14 2001-08-21 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US6780765B2 (en) * 1998-08-14 2004-08-24 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US6855202B2 (en) 2001-11-30 2005-02-15 The Regents Of The University Of California Shaped nanocrystal particles and methods for making the same
US6517995B1 (en) * 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
KR100741040B1 (ko) * 1999-10-15 2007-07-20 가부시키가이샤 에바라 세이사꾸쇼 배선형성방법 및 장치
US6646302B2 (en) * 2000-11-21 2003-11-11 Cornell Research Foundation, Inc. Embedded metal nanocrystals
EP1223615A1 (en) * 2001-01-10 2002-07-17 Eidgenössische Technische Hochschule Zürich A method for producing a structure using nanoparticles
US6645444B2 (en) 2001-06-29 2003-11-11 Nanospin Solutions Metal nanocrystals and synthesis thereof
US6794265B2 (en) * 2001-08-02 2004-09-21 Ultradots, Inc. Methods of forming quantum dots of Group IV semiconductor materials
US6710366B1 (en) 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
US7005669B1 (en) 2001-08-02 2006-02-28 Ultradots, Inc. Quantum dots, nanocomposite materials with quantum dots, devices with quantum dots, and related fabrication methods
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
US6819845B2 (en) * 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
US20060159838A1 (en) * 2005-01-14 2006-07-20 Cabot Corporation Controlling ink migration during the formation of printable electronic features
US6936181B2 (en) * 2001-10-11 2005-08-30 Kovio, Inc. Methods for patterning using liquid embossing
US7777303B2 (en) * 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
AU2002365267B2 (en) * 2001-10-24 2007-06-14 The Regents Of The University Of California Semiconductor liquid crystal composition and methods for making the same
US7147894B2 (en) * 2002-03-25 2006-12-12 The University Of North Carolina At Chapel Hill Method for assembling nano objects
US6957608B1 (en) 2002-08-02 2005-10-25 Kovio, Inc. Contact print methods
US7534488B2 (en) 2003-09-10 2009-05-19 The Regents Of The University Of California Graded core/shell semiconductor nanorods and nanorod barcodes
US6887297B2 (en) * 2002-11-08 2005-05-03 Wayne State University Copper nanocrystals and methods of producing same
US6897151B2 (en) * 2002-11-08 2005-05-24 Wayne State University Methods of filling a feature on a substrate with copper nanocrystals
WO2004081111A1 (en) * 2003-03-11 2004-09-23 Dow Global Technologies Inc. High dielectric constant composites
WO2004085305A2 (en) * 2003-03-21 2004-10-07 Wayne State University Metal oxide-containing nanoparticles
US7879696B2 (en) * 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
US7682970B2 (en) 2003-07-16 2010-03-23 The Regents Of The University Of California Maskless nanofabrication of electronic components
KR100523917B1 (ko) * 2003-07-18 2005-10-25 매그나칩 반도체 유한회사 반도체 소자의 인덕터 형성 방법
US20050014317A1 (en) * 2003-07-18 2005-01-20 Pyo Sung Gyu Method for forming inductor in semiconductor device
JP2007501525A (ja) * 2003-08-04 2007-01-25 ナノシス・インコーポレイテッド ナノワイヤ複合体およびこれらに由来する電子基板を作製するためのシステムおよび方法
US7098505B1 (en) 2004-09-09 2006-08-29 Actel Corporation Memory device with multiple memory layers of local charge storage
US20060068025A1 (en) * 2004-09-29 2006-03-30 Eastman Kodak Company Silver microribbon composition and method of making
KR100671234B1 (ko) * 2004-10-07 2007-01-18 한국전자통신연구원 전송매체를 이용한 통신장치 및 그 방법
US8383014B2 (en) 2010-06-15 2013-02-26 Cabot Corporation Metal nanoparticle compositions
TW200640596A (en) 2005-01-14 2006-12-01 Cabot Corp Production of metal nanoparticles
WO2006076609A2 (en) 2005-01-14 2006-07-20 Cabot Corporation Printable electronic features on non-uniform substrate and processes for making same
US7824466B2 (en) 2005-01-14 2010-11-02 Cabot Corporation Production of metal nanoparticles
US20060163744A1 (en) * 2005-01-14 2006-07-27 Cabot Corporation Printable electrical conductors
WO2006076606A2 (en) 2005-01-14 2006-07-20 Cabot Corporation Optimized multi-layer printing of electronics and displays
WO2006076608A2 (en) 2005-01-14 2006-07-20 Cabot Corporation A system and process for manufacturing custom electronics by combining traditional electronics with printable electronics
US20060190917A1 (en) * 2005-01-14 2006-08-24 Cabot Corporation System and process for manufacturing application specific printable circuits (ASPC'S) and other custom electronic devices
JP4247627B2 (ja) * 2005-02-10 2009-04-02 セイコーエプソン株式会社 光学素子の製造方法
US20060213957A1 (en) * 2005-03-26 2006-09-28 Addington Cary G Conductive trace formation via wicking action
US7655081B2 (en) * 2005-05-13 2010-02-02 Siluria Technologies, Inc. Plating bath and surface treatment compositions for thin film deposition
US7902639B2 (en) * 2005-05-13 2011-03-08 Siluria Technologies, Inc. Printable electric circuits, electronic components and method of forming the same
US7507618B2 (en) * 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
US8206505B2 (en) * 2005-11-29 2012-06-26 Sergei Nikolaevich Maximovsky Method for forming nano-dimensional clusters and setting ordered structures therefrom
US8404313B1 (en) 2006-03-22 2013-03-26 University Of South Florida Synthesis of nanocrystalline diamond fibers
US7625814B2 (en) * 2006-03-29 2009-12-01 Asm Nutool, Inc. Filling deep features with conductors in semiconductor manufacturing
US7485561B2 (en) * 2006-03-29 2009-02-03 Asm Nutool, Inc. Filling deep features with conductors in semiconductor manufacturing
US7718033B1 (en) * 2006-07-12 2010-05-18 The United States Of America As Represented By The United States Department Of Energy One-step method for the production of nanofluids
JP5207163B2 (ja) * 2007-03-30 2013-06-12 Ｎｌｔテクノロジー株式会社 埋込配線の形成方法、表示装置用基板及び当該基板を有する表示装置
US8535464B2 (en) 2007-04-05 2013-09-17 Avery Dennison Corporation Pressure sensitive shrink label
US8282754B2 (en) * 2007-04-05 2012-10-09 Avery Dennison Corporation Pressure sensitive shrink label
US20110198024A1 (en) * 2007-04-05 2011-08-18 Avery Dennison Corporation Systems and Processes for Applying Heat Transfer Labels
US8404160B2 (en) 2007-05-18 2013-03-26 Applied Nanotech Holdings, Inc. Metallic ink
US10231344B2 (en) 2007-05-18 2019-03-12 Applied Nanotech Holdings, Inc. Metallic ink
EP2003939A1 (en) * 2007-06-14 2008-12-17 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Method for preparing a pattern for a 3-dimensional electric circuit
US8506849B2 (en) * 2008-03-05 2013-08-13 Applied Nanotech Holdings, Inc. Additives and modifiers for solvent- and water-based metallic conductive inks
US9730333B2 (en) 2008-05-15 2017-08-08 Applied Nanotech Holdings, Inc. Photo-curing process for metallic inks
US8647979B2 (en) 2009-03-27 2014-02-11 Applied Nanotech Holdings, Inc. Buffer layer to enhance photo and/or laser sintering
US8422197B2 (en) 2009-07-15 2013-04-16 Applied Nanotech Holdings, Inc. Applying optical energy to nanoparticles to produce a specified nanostructure
US20110073835A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Semiconductor nanocrystal film
EP2752368A1 (en) 2010-01-28 2014-07-09 Avery Dennison Corporation Label applicator belt system
US20130164457A1 (en) * 2011-12-27 2013-06-27 Rigaku Innovative Technologies, Inc. Method of manufacturing patterned x-ray optical elements
TW201419315A (zh) 2012-07-09 2014-05-16 Applied Nanotech Holdings Inc 微米尺寸銅粒子的光燒結法
DE102021204294A1 (de) * 2021-04-29 2022-11-03 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren und Vorrichtung zum Verfüllen einer Rückseitenkavität einer Halbleiteranordnung

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57207178A (en) * 1981-06-12 1982-12-18 Nec Home Electronics Ltd Partial plating method
JPH04134827A (ja) * 1990-09-27 1992-05-08 Toshiba Corp 半導体装置の製造方法
JPH0578107A (ja) * 1991-09-19 1993-03-30 Yoshikiyo Ogino 窒化物粉体
JPH08153690A (ja) * 1994-09-29 1996-06-11 Sony Corp 半導体装置、半導体装置の製造方法、及び配線形成方法
WO1997006469A1 (en) * 1995-08-07 1997-02-20 Starfire Electronic Development & Marketing, Ltd. Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same
JPH09134891A (ja) * 1995-09-06 1997-05-20 Vacuum Metallurgical Co Ltd 半導体基板への薄膜形成方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466850A (en) 1980-12-29 1984-08-21 General Electric Company Method for fabricating a one-time electrically activated switch
US4613648A (en) 1984-03-29 1986-09-23 E. I. Du Pont De Nemours And Company Castable ceramic compositions
US4569876A (en) 1984-08-08 1986-02-11 Nec Corporation Multi-layered substrate having a fine wiring structure for LSI or VLSI circuits
US4655864A (en) 1985-03-25 1987-04-07 E. I. Du Pont De Nemours And Company Dielectric compositions and method of forming a multilayer interconnection using same
US4726991A (en) 1986-07-10 1988-02-23 Eos Technologies Inc. Electrical overstress protection material and process
US4923739A (en) 1987-07-30 1990-05-08 American Telephone And Telegraph Company Composite electrical interconnection medium comprising a conductive network, and article, assembly, and method
US5073518A (en) 1989-11-27 1991-12-17 Micron Technology, Inc. Process to mechanically and plastically deform solid ductile metal to fill contacts of conductive channels with ductile metal and process for dry polishing excess metal from a semiconductor wafer
US5453297A (en) 1990-05-11 1995-09-26 Board Of Trustees Operating Michigan State University Process for producing finely divided metals deposited on oxidized metals
US5624741A (en) 1990-05-31 1997-04-29 E. I. Du Pont De Nemours And Company Interconnect structure having electrical conduction paths formable therein
US5151168A (en) 1990-09-24 1992-09-29 Micron Technology, Inc. Process for metallizing integrated circuits with electrolytically-deposited copper
US5262357A (en) 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
US5294567A (en) 1993-01-08 1994-03-15 E. I. Du Pont De Nemours And Company Method for forming via holes in multilayer circuits
US5324553A (en) * 1993-04-30 1994-06-28 Energy Conversion Devices, Inc. Method for the improved microwave deposition of thin films
JP3724592B2 (ja) 1993-07-26 2005-12-07 ハイニックス セミコンダクター アメリカ インコーポレイテッド 半導体基板の平坦化方法
EP0659911A1 (en) 1993-12-23 1995-06-28 International Business Machines Corporation Method to form a polycrystalline film on a substrate
DE69510477T2 (de) 1994-03-14 2000-03-16 Studiengesellschaft Kohle Mbh Verfahren zur Herstellung von hoch verstreuten Metall-Kolloiden und von auf einem Substrat gebundenen Metall-Clusters durch elektrochemische Reduktion von Metallsalzen
US5576248A (en) * 1994-03-24 1996-11-19 Starfire Electronic Development & Marketing, Ltd. Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
US5559057A (en) 1994-03-24 1996-09-24 Starfire Electgronic Development & Marketing Ltd. Method for depositing and patterning thin films formed by fusing nanocrystalline precursors
US5953629A (en) 1995-06-09 1999-09-14 Vacuum Metallurgical Co., Ltd. Method of thin film forming on semiconductor substrate
EP0865078A1 (en) 1997-03-13 1998-09-16 Hitachi Europe Limited Method of depositing nanometre scale particles
US5928405A (en) 1997-05-21 1999-07-27 Degussa Corporation Method of making metallic powders by aerosol thermolysis
US6214259B1 (en) 1998-08-10 2001-04-10 Vacuum Metallurgical Co., Ltd. Dispersion containing Cu ultrafine particles individually dispersed therein
US6194316B1 (en) 1998-08-10 2001-02-27 Vacuum Metallurgical Co., Ltd. Method for forming CU-thin film
US6277740B1 (en) * 1998-08-14 2001-08-21 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US6319814B1 (en) 1999-10-12 2001-11-20 United Microelectronics Corp. Method of fabricating dual damascene

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57207178A (en) * 1981-06-12 1982-12-18 Nec Home Electronics Ltd Partial plating method
JPH04134827A (ja) * 1990-09-27 1992-05-08 Toshiba Corp 半導体装置の製造方法
JPH0578107A (ja) * 1991-09-19 1993-03-30 Yoshikiyo Ogino 窒化物粉体
JPH08153690A (ja) * 1994-09-29 1996-06-11 Sony Corp 半導体装置、半導体装置の製造方法、及び配線形成方法
WO1997006469A1 (en) * 1995-08-07 1997-02-20 Starfire Electronic Development & Marketing, Ltd. Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same
JPH09134891A (ja) * 1995-09-06 1997-05-20 Vacuum Metallurgical Co Ltd 半導体基板への薄膜形成方法

Also Published As

Publication number Publication date
US6774036B2 (en) 2004-08-10
US6277740B1 (en) 2001-08-21
KR100653337B1 (ko) 2006-12-01
US20020006723A1 (en) 2002-01-17
US20040023488A1 (en) 2004-02-05
AU5560499A (en) 2000-03-06
KR20010072473A (ko) 2001-07-31
WO2000010197A1 (en) 2000-02-24

Similar Documents

Publication Publication Date Title
JP2002522920A (ja) 集積回路トレンチ構造およびその作製方法
US6780765B2 (en) Integrated circuit trenched features and method of producing same
US6887297B2 (en) Copper nanocrystals and methods of producing same
US7625814B2 (en) Filling deep features with conductors in semiconductor manufacturing
US6897151B2 (en) Methods of filling a feature on a substrate with copper nanocrystals
DE69332917T2 (de) Mit feuerfestem Metall aus PVD und CVD bedeckte Metallleiterbahnen und Durchgangsleitungen niedrigen Widerstandes
Shacham‐Diamand et al. Electroless silver and silver with tungsten thin films for microelectronics and microelectromechanical system applications
US5587111A (en) Metal paste, process for producing same and method of making a metallic thin film using the metal paste
US20060254504A1 (en) Plating bath and surface treatment compositions for thin film deposition
EP0980097B1 (en) Dispersion containing Cu ultrafine particles individually dispersed therein
JP2000510253A (ja) 表面にナノ構造を形成するリソグラフ法
CN101156219B (zh) 油墨组合物及金属质材料
WO2004075211A1 (en) Method of forming conductors at low temperatures using metallic nanocrystals and product
EP1306415A2 (de) Zusammensetzung für das chemisch-mechanische Polieren von Metall- und Metall-Dielektrikastrukturen mit hoher Selektivität
CN104685098B (zh) 担载用于镀覆处理的催化剂颗粒的基板的处理方法
JP4578755B2 (ja) 集積回路の製造方法
JPWO2001084610A1 (ja) 集積回路の製造方法および該製造方法により形成された集積回路付基板
JP3953237B2 (ja) 金属薄膜の形成方法、および金属微粒子分散液の作製方法
JP2006173408A (ja) 回路付基板の製造方法および該方法で得られた回路付基板
JP2001035814A (ja) 銀配線パターンの形成法
US6194316B1 (en) Method for forming CU-thin film
JP4751496B2 (ja) （Ｃｕ−Ｃ）シード層の形成法
TWI291496B (en) Copper alloy for semiconductor interconnections, fabrication method thereof, semiconductor device having copper alloy interconnections fabricated by the method, and sputtering target for fabricating copper alloy interconnections for semiconductors
JP2000323434A (ja) スパッタターゲット、配線膜および電子部品
JP3488193B2 (ja) 銅薄膜のメッキ方法

Legal Events

Date Code Title Description
A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20060719

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060719

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100423

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100428

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100728

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100804

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20101222