AU5560499A - Integrated circuit trenched features and method of producing same - Google Patents

Integrated circuit trenched features and method of producing same

Info

Publication number
AU5560499A
AU5560499A AU55604/99A AU5560499A AU5560499A AU 5560499 A AU5560499 A AU 5560499A AU 55604/99 A AU55604/99 A AU 55604/99A AU 5560499 A AU5560499 A AU 5560499A AU 5560499 A AU5560499 A AU 5560499A
Authority
AU
Australia
Prior art keywords
trenched
features
integrated circuit
producing same
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU55604/99A
Other languages
English (en)
Inventor
Avery N. Goldstein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU5560499A publication Critical patent/AU5560499A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/01Manufacture or treatment
    • H10D64/011Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44Conductive materials thereof
    • H10W20/4403Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425Barrier, adhesion or liner layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
AU55604/99A 1998-08-14 1999-08-13 Integrated circuit trenched features and method of producing same Abandoned AU5560499A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US9661698P 1998-08-14 1998-08-14
US60096616 1998-08-14
US09/373,295 US6277740B1 (en) 1998-08-14 1999-08-12 Integrated circuit trenched features and method of producing same
US09373295 1999-08-12
PCT/US1999/018430 WO2000010197A1 (en) 1998-08-14 1999-08-13 Integrated circuit trenched features and method of producing same

Publications (1)

Publication Number Publication Date
AU5560499A true AU5560499A (en) 2000-03-06

Family

ID=26791884

Family Applications (1)

Application Number Title Priority Date Filing Date
AU55604/99A Abandoned AU5560499A (en) 1998-08-14 1999-08-13 Integrated circuit trenched features and method of producing same

Country Status (5)

Country Link
US (3) US6277740B1 (https=)
JP (1) JP2002522920A (https=)
KR (1) KR100653337B1 (https=)
AU (1) AU5560499A (https=)
WO (1) WO2000010197A1 (https=)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001513697A (ja) 1997-02-24 2001-09-04 スーペリア マイクロパウダーズ リミテッド ライアビリティ カンパニー エアロゾル法及び装置、粒子製品、並びに該粒子製品から製造される電子装置
US6277740B1 (en) * 1998-08-14 2001-08-21 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US6780765B2 (en) * 1998-08-14 2004-08-24 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US6855202B2 (en) 2001-11-30 2005-02-15 The Regents Of The University Of California Shaped nanocrystal particles and methods for making the same
US6517995B1 (en) * 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
KR100741040B1 (ko) * 1999-10-15 2007-07-20 가부시키가이샤 에바라 세이사꾸쇼 배선형성방법 및 장치
US6646302B2 (en) * 2000-11-21 2003-11-11 Cornell Research Foundation, Inc. Embedded metal nanocrystals
EP1223615A1 (en) * 2001-01-10 2002-07-17 Eidgenössische Technische Hochschule Zürich A method for producing a structure using nanoparticles
US6645444B2 (en) 2001-06-29 2003-11-11 Nanospin Solutions Metal nanocrystals and synthesis thereof
US6794265B2 (en) * 2001-08-02 2004-09-21 Ultradots, Inc. Methods of forming quantum dots of Group IV semiconductor materials
US6710366B1 (en) 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
US7005669B1 (en) 2001-08-02 2006-02-28 Ultradots, Inc. Quantum dots, nanocomposite materials with quantum dots, devices with quantum dots, and related fabrication methods
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
US6819845B2 (en) * 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
US20060159838A1 (en) * 2005-01-14 2006-07-20 Cabot Corporation Controlling ink migration during the formation of printable electronic features
US6936181B2 (en) * 2001-10-11 2005-08-30 Kovio, Inc. Methods for patterning using liquid embossing
US7777303B2 (en) * 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
AU2002365267B2 (en) * 2001-10-24 2007-06-14 The Regents Of The University Of California Semiconductor liquid crystal composition and methods for making the same
US7147894B2 (en) * 2002-03-25 2006-12-12 The University Of North Carolina At Chapel Hill Method for assembling nano objects
US6957608B1 (en) 2002-08-02 2005-10-25 Kovio, Inc. Contact print methods
US7534488B2 (en) 2003-09-10 2009-05-19 The Regents Of The University Of California Graded core/shell semiconductor nanorods and nanorod barcodes
US6887297B2 (en) * 2002-11-08 2005-05-03 Wayne State University Copper nanocrystals and methods of producing same
US6897151B2 (en) * 2002-11-08 2005-05-24 Wayne State University Methods of filling a feature on a substrate with copper nanocrystals
WO2004081111A1 (en) * 2003-03-11 2004-09-23 Dow Global Technologies Inc. High dielectric constant composites
WO2004085305A2 (en) * 2003-03-21 2004-10-07 Wayne State University Metal oxide-containing nanoparticles
US7879696B2 (en) * 2003-07-08 2011-02-01 Kovio, Inc. Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
US7682970B2 (en) 2003-07-16 2010-03-23 The Regents Of The University Of California Maskless nanofabrication of electronic components
KR100523917B1 (ko) * 2003-07-18 2005-10-25 매그나칩 반도체 유한회사 반도체 소자의 인덕터 형성 방법
US20050014317A1 (en) * 2003-07-18 2005-01-20 Pyo Sung Gyu Method for forming inductor in semiconductor device
JP2007501525A (ja) * 2003-08-04 2007-01-25 ナノシス・インコーポレイテッド ナノワイヤ複合体およびこれらに由来する電子基板を作製するためのシステムおよび方法
US7098505B1 (en) 2004-09-09 2006-08-29 Actel Corporation Memory device with multiple memory layers of local charge storage
US20060068025A1 (en) * 2004-09-29 2006-03-30 Eastman Kodak Company Silver microribbon composition and method of making
KR100671234B1 (ko) * 2004-10-07 2007-01-18 한국전자통신연구원 전송매체를 이용한 통신장치 및 그 방법
US8383014B2 (en) 2010-06-15 2013-02-26 Cabot Corporation Metal nanoparticle compositions
TW200640596A (en) 2005-01-14 2006-12-01 Cabot Corp Production of metal nanoparticles
WO2006076609A2 (en) 2005-01-14 2006-07-20 Cabot Corporation Printable electronic features on non-uniform substrate and processes for making same
US7824466B2 (en) 2005-01-14 2010-11-02 Cabot Corporation Production of metal nanoparticles
US20060163744A1 (en) * 2005-01-14 2006-07-27 Cabot Corporation Printable electrical conductors
WO2006076606A2 (en) 2005-01-14 2006-07-20 Cabot Corporation Optimized multi-layer printing of electronics and displays
WO2006076608A2 (en) 2005-01-14 2006-07-20 Cabot Corporation A system and process for manufacturing custom electronics by combining traditional electronics with printable electronics
US20060190917A1 (en) * 2005-01-14 2006-08-24 Cabot Corporation System and process for manufacturing application specific printable circuits (ASPC'S) and other custom electronic devices
JP4247627B2 (ja) * 2005-02-10 2009-04-02 セイコーエプソン株式会社 光学素子の製造方法
US20060213957A1 (en) * 2005-03-26 2006-09-28 Addington Cary G Conductive trace formation via wicking action
US7655081B2 (en) * 2005-05-13 2010-02-02 Siluria Technologies, Inc. Plating bath and surface treatment compositions for thin film deposition
US7902639B2 (en) * 2005-05-13 2011-03-08 Siluria Technologies, Inc. Printable electric circuits, electronic components and method of forming the same
US7507618B2 (en) * 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
US8206505B2 (en) * 2005-11-29 2012-06-26 Sergei Nikolaevich Maximovsky Method for forming nano-dimensional clusters and setting ordered structures therefrom
US8404313B1 (en) 2006-03-22 2013-03-26 University Of South Florida Synthesis of nanocrystalline diamond fibers
US7625814B2 (en) * 2006-03-29 2009-12-01 Asm Nutool, Inc. Filling deep features with conductors in semiconductor manufacturing
US7485561B2 (en) * 2006-03-29 2009-02-03 Asm Nutool, Inc. Filling deep features with conductors in semiconductor manufacturing
US7718033B1 (en) * 2006-07-12 2010-05-18 The United States Of America As Represented By The United States Department Of Energy One-step method for the production of nanofluids
JP5207163B2 (ja) * 2007-03-30 2013-06-12 Nltテクノロジー株式会社 埋込配線の形成方法、表示装置用基板及び当該基板を有する表示装置
US8535464B2 (en) 2007-04-05 2013-09-17 Avery Dennison Corporation Pressure sensitive shrink label
US8282754B2 (en) * 2007-04-05 2012-10-09 Avery Dennison Corporation Pressure sensitive shrink label
US20110198024A1 (en) * 2007-04-05 2011-08-18 Avery Dennison Corporation Systems and Processes for Applying Heat Transfer Labels
US8404160B2 (en) 2007-05-18 2013-03-26 Applied Nanotech Holdings, Inc. Metallic ink
US10231344B2 (en) 2007-05-18 2019-03-12 Applied Nanotech Holdings, Inc. Metallic ink
EP2003939A1 (en) * 2007-06-14 2008-12-17 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Method for preparing a pattern for a 3-dimensional electric circuit
US8506849B2 (en) * 2008-03-05 2013-08-13 Applied Nanotech Holdings, Inc. Additives and modifiers for solvent- and water-based metallic conductive inks
US9730333B2 (en) 2008-05-15 2017-08-08 Applied Nanotech Holdings, Inc. Photo-curing process for metallic inks
US8647979B2 (en) 2009-03-27 2014-02-11 Applied Nanotech Holdings, Inc. Buffer layer to enhance photo and/or laser sintering
US8422197B2 (en) 2009-07-15 2013-04-16 Applied Nanotech Holdings, Inc. Applying optical energy to nanoparticles to produce a specified nanostructure
US20110073835A1 (en) * 2009-09-29 2011-03-31 Xiaofan Ren Semiconductor nanocrystal film
EP2752368A1 (en) 2010-01-28 2014-07-09 Avery Dennison Corporation Label applicator belt system
US20130164457A1 (en) * 2011-12-27 2013-06-27 Rigaku Innovative Technologies, Inc. Method of manufacturing patterned x-ray optical elements
TW201419315A (zh) 2012-07-09 2014-05-16 Applied Nanotech Holdings Inc 微米尺寸銅粒子的光燒結法
DE102021204294A1 (de) * 2021-04-29 2022-11-03 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren und Vorrichtung zum Verfüllen einer Rückseitenkavität einer Halbleiteranordnung

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466850A (en) 1980-12-29 1984-08-21 General Electric Company Method for fabricating a one-time electrically activated switch
JPS57207178A (en) * 1981-06-12 1982-12-18 Nec Home Electronics Ltd Partial plating method
US4613648A (en) 1984-03-29 1986-09-23 E. I. Du Pont De Nemours And Company Castable ceramic compositions
US4569876A (en) 1984-08-08 1986-02-11 Nec Corporation Multi-layered substrate having a fine wiring structure for LSI or VLSI circuits
US4655864A (en) 1985-03-25 1987-04-07 E. I. Du Pont De Nemours And Company Dielectric compositions and method of forming a multilayer interconnection using same
US4726991A (en) 1986-07-10 1988-02-23 Eos Technologies Inc. Electrical overstress protection material and process
US4923739A (en) 1987-07-30 1990-05-08 American Telephone And Telegraph Company Composite electrical interconnection medium comprising a conductive network, and article, assembly, and method
US5073518A (en) 1989-11-27 1991-12-17 Micron Technology, Inc. Process to mechanically and plastically deform solid ductile metal to fill contacts of conductive channels with ductile metal and process for dry polishing excess metal from a semiconductor wafer
US5453297A (en) 1990-05-11 1995-09-26 Board Of Trustees Operating Michigan State University Process for producing finely divided metals deposited on oxidized metals
US5624741A (en) 1990-05-31 1997-04-29 E. I. Du Pont De Nemours And Company Interconnect structure having electrical conduction paths formable therein
US5151168A (en) 1990-09-24 1992-09-29 Micron Technology, Inc. Process for metallizing integrated circuits with electrolytically-deposited copper
JPH04134827A (ja) * 1990-09-27 1992-05-08 Toshiba Corp 半導体装置の製造方法
JP2539712B2 (ja) * 1991-09-19 1996-10-02 喜清 荻野 窒化物粉体
US5262357A (en) 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
US5294567A (en) 1993-01-08 1994-03-15 E. I. Du Pont De Nemours And Company Method for forming via holes in multilayer circuits
US5324553A (en) * 1993-04-30 1994-06-28 Energy Conversion Devices, Inc. Method for the improved microwave deposition of thin films
JP3724592B2 (ja) 1993-07-26 2005-12-07 ハイニックス セミコンダクター アメリカ インコーポレイテッド 半導体基板の平坦化方法
EP0659911A1 (en) 1993-12-23 1995-06-28 International Business Machines Corporation Method to form a polycrystalline film on a substrate
DE69510477T2 (de) 1994-03-14 2000-03-16 Studiengesellschaft Kohle Mbh Verfahren zur Herstellung von hoch verstreuten Metall-Kolloiden und von auf einem Substrat gebundenen Metall-Clusters durch elektrochemische Reduktion von Metallsalzen
US5576248A (en) * 1994-03-24 1996-11-19 Starfire Electronic Development & Marketing, Ltd. Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
US5670279A (en) * 1994-03-24 1997-09-23 Starfire Electronic Development & Marketing, Ltd. Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same
US5559057A (en) 1994-03-24 1996-09-24 Starfire Electgronic Development & Marketing Ltd. Method for depositing and patterning thin films formed by fusing nanocrystalline precursors
JPH08153690A (ja) * 1994-09-29 1996-06-11 Sony Corp 半導体装置、半導体装置の製造方法、及び配線形成方法
US5953629A (en) 1995-06-09 1999-09-14 Vacuum Metallurgical Co., Ltd. Method of thin film forming on semiconductor substrate
JPH09134891A (ja) * 1995-09-06 1997-05-20 Vacuum Metallurgical Co Ltd 半導体基板への薄膜形成方法
EP0865078A1 (en) 1997-03-13 1998-09-16 Hitachi Europe Limited Method of depositing nanometre scale particles
US5928405A (en) 1997-05-21 1999-07-27 Degussa Corporation Method of making metallic powders by aerosol thermolysis
US6214259B1 (en) 1998-08-10 2001-04-10 Vacuum Metallurgical Co., Ltd. Dispersion containing Cu ultrafine particles individually dispersed therein
US6194316B1 (en) 1998-08-10 2001-02-27 Vacuum Metallurgical Co., Ltd. Method for forming CU-thin film
US6277740B1 (en) * 1998-08-14 2001-08-21 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US6319814B1 (en) 1999-10-12 2001-11-20 United Microelectronics Corp. Method of fabricating dual damascene

Also Published As

Publication number Publication date
US6774036B2 (en) 2004-08-10
US6277740B1 (en) 2001-08-21
JP2002522920A (ja) 2002-07-23
KR100653337B1 (ko) 2006-12-01
US20020006723A1 (en) 2002-01-17
US20040023488A1 (en) 2004-02-05
KR20010072473A (ko) 2001-07-31
WO2000010197A1 (en) 2000-02-24

Similar Documents

Publication Publication Date Title
AU5560499A (en) Integrated circuit trenched features and method of producing same
EP0977259A3 (en) Semiconductor device and method of producing the same
AU5701899A (en) Integrated inductive components and method of fabricating such components
AU8007000A (en) Integrated forms and method of making such forms
AU4268799A (en) Integrated electronic micromodule and method for making same
AU3267797A (en) Integrated circuit device and method of making the same
GB0005006D0 (en) Complementary integrated circuit and method of manufacture
AU5251099A (en) Self-evolving database and method of using same
AU2002213176A1 (en) System and method of integrated calorie management
SG82585A1 (en) Sub-quarter-micron mosfet and method of its manufacturing
AU2864499A (en) Method of etching
AU6000699A (en) Semiconductor device, method of manufacture thereof, and electronic device
AU5543600A (en) Method of modifying an integrated circuit
AU1593399A (en) Integrated circuit die assembly and method for making same
AU3091599A (en) Method of making dimethylnaphtalenes
AU1204299A (en) Trench ic and method of making
AU8739598A (en) Method of making masks and electronic parts
AU2974297A (en) Method for making an integrated circuit and integrated circuit produced by said method
GB0110041D0 (en) Complementary integrated circuit and method of manufacture
AU4866999A (en) Resin/copper/metal laminate and method of producing same
AU3870800A (en) Die boards and method of making
AU2762699A (en) Micro-fastening system and method of manufacture
HUP0103905A3 (en) Method of producing wye-decalactone
AU6270799A (en) Firestarter and method of making same
AU3938299A (en) Method of altering heartbeat

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase