KR100652395B1 - 다이-휨이 억제된 반도체 소자 및 그 제조방법 - Google Patents

다이-휨이 억제된 반도체 소자 및 그 제조방법 Download PDF

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Publication number
KR100652395B1
KR100652395B1 KR1020050002872A KR20050002872A KR100652395B1 KR 100652395 B1 KR100652395 B1 KR 100652395B1 KR 1020050002872 A KR1020050002872 A KR 1020050002872A KR 20050002872 A KR20050002872 A KR 20050002872A KR 100652395 B1 KR100652395 B1 KR 100652395B1
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South Korea
Prior art keywords
stress relaxation
material layer
pattern
semiconductor device
patterns
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Expired - Fee Related
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KR1020050002872A
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English (en)
Korean (ko)
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KR20060082496A (ko
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서형원
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삼성전자주식회사
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Priority to KR1020050002872A priority Critical patent/KR100652395B1/ko
Priority to US11/320,985 priority patent/US7781851B2/en
Priority to JP2006004185A priority patent/JP2006196899A/ja
Publication of KR20060082496A publication Critical patent/KR20060082496A/ko
Application granted granted Critical
Publication of KR100652395B1 publication Critical patent/KR100652395B1/ko
Priority to US12/839,573 priority patent/US20100285654A1/en
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/083—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being via holes penetrating underlying conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
KR1020050002872A 2005-01-12 2005-01-12 다이-휨이 억제된 반도체 소자 및 그 제조방법 Expired - Fee Related KR100652395B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050002872A KR100652395B1 (ko) 2005-01-12 2005-01-12 다이-휨이 억제된 반도체 소자 및 그 제조방법
US11/320,985 US7781851B2 (en) 2005-01-12 2005-12-30 Semiconductor device having reduced die-warpage and method of manufacturing the same
JP2006004185A JP2006196899A (ja) 2005-01-12 2006-01-11 ダイの反りが抑制された半導体素子及びその製造方法
US12/839,573 US20100285654A1 (en) 2005-01-12 2010-07-20 Semiconductor device having reduced die-warpage and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050002872A KR100652395B1 (ko) 2005-01-12 2005-01-12 다이-휨이 억제된 반도체 소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20060082496A KR20060082496A (ko) 2006-07-19
KR100652395B1 true KR100652395B1 (ko) 2006-12-01

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Family Applications (1)

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KR1020050002872A Expired - Fee Related KR100652395B1 (ko) 2005-01-12 2005-01-12 다이-휨이 억제된 반도체 소자 및 그 제조방법

Country Status (3)

Country Link
US (2) US7781851B2 (https=)
JP (1) JP2006196899A (https=)
KR (1) KR100652395B1 (https=)

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DE102008044984A1 (de) * 2008-08-29 2010-07-15 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement mit Verspannungsrelaxationsspalte zur Verbesserung der Chipgehäusewechselwirkungsstabilität
CN103026484B (zh) 2011-04-13 2015-09-30 松下电器产业株式会社 具有芯片连接部分的冗余救济结构的三维集成电路
KR102059823B1 (ko) * 2013-06-11 2019-12-27 삼성전기주식회사 기판 제조 방법 및 빌드-업 기판 적층체
KR102065648B1 (ko) * 2013-08-14 2020-01-13 삼성전자주식회사 반도체 패키지
US9397051B2 (en) 2013-12-03 2016-07-19 Invensas Corporation Warpage reduction in structures with electrical circuitry
CN103779245B (zh) * 2014-01-28 2016-09-28 苏州晶方半导体科技股份有限公司 芯片封装方法及封装结构
US9905515B2 (en) * 2014-08-08 2018-02-27 Mediatek Inc. Integrated circuit stress releasing structure
US9847287B2 (en) * 2015-06-17 2017-12-19 Semiconductor Components Industries, Llc Passive tunable integrated circuit (PTIC) and related methods
US20170062240A1 (en) * 2015-08-25 2017-03-02 Inotera Memories, Inc. Method for manufacturing a wafer level package
CN107039235A (zh) * 2016-02-03 2017-08-11 奕力科技股份有限公司 具低翘曲度的驱动晶片及其制造方法
KR102484394B1 (ko) 2017-12-06 2023-01-03 삼성전자주식회사 반도체 장치
CN113518503B (zh) * 2021-03-31 2022-08-09 深圳市景旺电子股份有限公司 多层印刷线路板及其制作方法
US20230187850A1 (en) * 2021-12-13 2023-06-15 Intel Corporation Liquid metal connection device and method
KR20250019951A (ko) * 2023-08-02 2025-02-11 삼성전자주식회사 반도체 공정 전 웨이퍼 및 이를 이용한 반도체 칩 제조방법
CN116913868A (zh) * 2023-09-11 2023-10-20 深圳市威兆半导体股份有限公司 半导体器件及其制造方法

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JPH01291430A (ja) * 1988-05-18 1989-11-24 Fujitsu Ltd 半導体装置の製造方法
JPH05343276A (ja) * 1992-06-09 1993-12-24 Mitsubishi Materials Corp 半導体ウェーハの製造方法
JPH06314664A (ja) * 1993-04-28 1994-11-08 Mitsubishi Electric Corp 半導体装置のメッキ方法
JP2001093863A (ja) 1999-09-24 2001-04-06 Toshiba Corp ウェーハ裏面スパッタリング方法及び半導体製造装置

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US4654269A (en) * 1985-06-21 1987-03-31 Fairchild Camera & Instrument Corp. Stress relieved intermediate insulating layer for multilayer metalization
JP3229491B2 (ja) * 1993-10-05 2001-11-19 株式会社小糸製作所 自動車用ヘッドランプにおけるエイミング用水準器
US5438022A (en) * 1993-12-14 1995-08-01 At&T Global Information Solutions Company Method for using low dielectric constant material in integrated circuit fabrication
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KR0182073B1 (ko) * 1995-12-22 1999-03-20 황인길 반도체 칩 스케일 반도체 패키지 및 그 제조방법
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JPH1167755A (ja) * 1997-08-21 1999-03-09 Seiko Epson Corp 半導体の構造
JPH11307525A (ja) 1998-04-22 1999-11-05 Toshiba Corp 半導体装置及びその製造方法
US6016000A (en) * 1998-04-22 2000-01-18 Cvc, Inc. Ultra high-speed chip semiconductor integrated circuit interconnect structure and fabrication method using free-space dielectrics
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US6979595B1 (en) * 2000-08-24 2005-12-27 Micron Technology, Inc. Packaged microelectronic devices with pressure release elements and methods for manufacturing and using such packaged microelectronic devices
KR100410990B1 (ko) * 2001-02-20 2003-12-18 삼성전자주식회사 다층배선을 갖는 반도체 장치 및 그의 제조방법
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JP3882648B2 (ja) 2002-03-14 2007-02-21 富士電機デバイステクノロジー株式会社 半導体装置およびその製造方法
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TWI256095B (en) * 2004-03-11 2006-06-01 Siliconware Precision Industries Co Ltd Wafer level semiconductor package with build-up layer and process for fabricating the same
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Publication number Priority date Publication date Assignee Title
JPS58162042A (ja) 1982-03-23 1983-09-26 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
JPH01291430A (ja) * 1988-05-18 1989-11-24 Fujitsu Ltd 半導体装置の製造方法
JPH05343276A (ja) * 1992-06-09 1993-12-24 Mitsubishi Materials Corp 半導体ウェーハの製造方法
JPH06314664A (ja) * 1993-04-28 1994-11-08 Mitsubishi Electric Corp 半導体装置のメッキ方法
JP2001093863A (ja) 1999-09-24 2001-04-06 Toshiba Corp ウェーハ裏面スパッタリング方法及び半導体製造装置

Also Published As

Publication number Publication date
US20100285654A1 (en) 2010-11-11
US20060163689A1 (en) 2006-07-27
JP2006196899A (ja) 2006-07-27
KR20060082496A (ko) 2006-07-19
US7781851B2 (en) 2010-08-24

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