KR100646209B1 - 반도체 집적회로장치 - Google Patents

반도체 집적회로장치 Download PDF

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Publication number
KR100646209B1
KR100646209B1 KR1019990034761A KR19990034761A KR100646209B1 KR 100646209 B1 KR100646209 B1 KR 100646209B1 KR 1019990034761 A KR1019990034761 A KR 1019990034761A KR 19990034761 A KR19990034761 A KR 19990034761A KR 100646209 B1 KR100646209 B1 KR 100646209B1
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KR
South Korea
Prior art keywords
circuit
power supply
voltage
region
mosfet
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Expired - Lifetime
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KR1019990034761A
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English (en)
Korean (ko)
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KR20000017436A (ko
Inventor
리호요시로
나카이키요시
에가와히데가즈
스즈키유키히데
후지이이사무
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
가부시키가이샤 히타치초에루. 에스. 아이. 시스테무즈
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Publication of KR20000017436A publication Critical patent/KR20000017436A/ko
Application granted granted Critical
Publication of KR100646209B1 publication Critical patent/KR100646209B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019990034761A 1998-08-27 1999-08-21 반도체 집적회로장치 Expired - Lifetime KR100646209B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24160798A JP4079522B2 (ja) 1998-08-27 1998-08-27 半導体集積回路装置
JP98-241607 1998-08-27

Publications (2)

Publication Number Publication Date
KR20000017436A KR20000017436A (ko) 2000-03-25
KR100646209B1 true KR100646209B1 (ko) 2006-11-17

Family

ID=17076844

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990034761A Expired - Lifetime KR100646209B1 (ko) 1998-08-27 1999-08-21 반도체 집적회로장치

Country Status (4)

Country Link
US (2) US6411160B1 (enExample)
JP (1) JP4079522B2 (enExample)
KR (1) KR100646209B1 (enExample)
TW (1) TW421883B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016238A (ja) * 2000-06-29 2002-01-18 Mitsubishi Electric Corp 半導体装置
KR100400311B1 (ko) * 2001-06-29 2003-10-01 주식회사 하이닉스반도체 반도체 메모리 소자의 신호 지연 제어 장치
US6664589B2 (en) * 2001-08-30 2003-12-16 Micron Technology, Inc. Technique to control tunneling currents in DRAM capacitors, cells, and devices
JP3786608B2 (ja) * 2002-01-28 2006-06-14 株式会社ルネサステクノロジ 半導体集積回路装置
US7055069B2 (en) * 2002-08-23 2006-05-30 Infineon Technologies Ag Spare input/output buffer
US6969909B2 (en) * 2002-12-20 2005-11-29 Vlt, Inc. Flip chip FET device
US7615822B1 (en) 2002-12-23 2009-11-10 Volterra Semiconductor Corporation Diffused drain transistor
US7038917B2 (en) * 2002-12-27 2006-05-02 Vlt, Inc. Low loss, high density array interconnection
FR2853475B1 (fr) * 2003-04-01 2005-07-08 Atmel Nantes Sa Circuit integre delivrant des niveaux logiques a une tension independante de la tension d'alimentation, sans regulateur associe pour la partie puissance, et module de communication correspondant
US7074659B2 (en) * 2003-11-13 2006-07-11 Volterra Semiconductor Corporation Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor
US7220633B2 (en) * 2003-11-13 2007-05-22 Volterra Semiconductor Corporation Method of fabricating a lateral double-diffused MOSFET
US7163856B2 (en) 2003-11-13 2007-01-16 Volterra Semiconductor Corporation Method of fabricating a lateral double-diffused mosfet (LDMOS) transistor and a conventional CMOS transistor
JP4364226B2 (ja) * 2006-09-21 2009-11-11 株式会社東芝 半導体集積回路
US7663953B2 (en) * 2007-03-12 2010-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method for high speed sensing for extra low voltage DRAM
US7663908B2 (en) * 2007-03-12 2010-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method for increasing retention time in DRAM
US8830784B2 (en) 2011-10-14 2014-09-09 Taiwan Semiconductor Manufacturing Co., Ltd. Negative word line driver for semiconductor memories
US8624632B2 (en) 2012-03-29 2014-01-07 International Business Machines Corporation Sense amplifier-type latch circuits with static bias current for enhanced operating frequency
US9196375B2 (en) 2013-07-05 2015-11-24 Kabushiki Kaisha Toshiba Semiconductor storage device
US20200350263A1 (en) * 2019-04-30 2020-11-05 Nxp B.V. Semiconductor devices with security features

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05174578A (ja) * 1991-12-24 1993-07-13 Mitsubishi Electric Corp 半導体装置
KR970029835A (ko) * 1995-11-09 1997-06-26 가나이 츠토무 셀어레이상에 전원 및 신호버스가 메시형상으로 배치된 시스템
JP2000049305A (ja) * 1998-07-28 2000-02-18 Hitachi Ltd 半導体記憶装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2919365B2 (ja) * 1996-06-27 1999-07-12 日本電気アイシーマイコンシステム株式会社 Ｍｏｓトランジスタの容量設計方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05174578A (ja) * 1991-12-24 1993-07-13 Mitsubishi Electric Corp 半導体装置
KR970029835A (ko) * 1995-11-09 1997-06-26 가나이 츠토무 셀어레이상에 전원 및 신호버스가 메시형상으로 배치된 시스템
JP2000049305A (ja) * 1998-07-28 2000-02-18 Hitachi Ltd 半導体記憶装置

Also Published As

Publication number Publication date
JP4079522B2 (ja) 2008-04-23
US6411160B1 (en) 2002-06-25
US6518835B2 (en) 2003-02-11
JP2000077623A (ja) 2000-03-14
KR20000017436A (ko) 2000-03-25
US20020130714A1 (en) 2002-09-19
TW421883B (en) 2001-02-11

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