KR100639862B1 - 반사방지막형성용 조성물 - Google Patents

반사방지막형성용 조성물 Download PDF

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Publication number
KR100639862B1
KR100639862B1 KR1020057006365A KR20057006365A KR100639862B1 KR 100639862 B1 KR100639862 B1 KR 100639862B1 KR 1020057006365 A KR1020057006365 A KR 1020057006365A KR 20057006365 A KR20057006365 A KR 20057006365A KR 100639862 B1 KR100639862 B1 KR 100639862B1
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South Korea
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mol
antireflection film
composition
component
units
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Expired - Fee Related
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KR1020057006365A
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English (en)
Korean (ko)
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KR20050074481A (ko
Inventor
타쿠 히라야마
토모타카 야마다
다이스케 카와나
코우키 타무라
카즈후미 사토
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토쿄오오카코교 가부시기가이샤
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Publication of KR20050074481A publication Critical patent/KR20050074481A/ko
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/32—Radiation-absorbing paints
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020057006365A 2002-12-02 2003-12-01 반사방지막형성용 조성물 Expired - Fee Related KR100639862B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002382898 2002-12-02
JPJP-P-2002-00382898 2002-12-02
JP2003116164 2003-04-21
JPJP-P-2003-00116164 2003-04-21

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020057010795A Division KR20050084283A (ko) 2002-12-02 2003-12-01 래더형 실리콘 공중합체

Publications (2)

Publication Number Publication Date
KR20050074481A KR20050074481A (ko) 2005-07-18
KR100639862B1 true KR100639862B1 (ko) 2006-10-31

Family

ID=32473768

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020057006365A Expired - Fee Related KR100639862B1 (ko) 2002-12-02 2003-12-01 반사방지막형성용 조성물
KR1020057010795A Ceased KR20050084283A (ko) 2002-12-02 2003-12-01 래더형 실리콘 공중합체

Family Applications After (1)

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Country Status (6)

Country Link
US (3) US20050282090A1 (https=)
KR (2) KR100639862B1 (https=)
AU (1) AU2003302526A1 (https=)
DE (1) DE10393808T5 (https=)
TW (2) TW200423225A (https=)
WO (1) WO2004051376A1 (https=)

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ATE377036T1 (de) 2003-05-23 2007-11-15 Dow Corning Siloxan-harz basierte anti- reflektionsbeschichtung mit hoher nassätzgeschwindigkeit
JP4294521B2 (ja) * 2004-03-19 2009-07-15 東京応化工業株式会社 ネガ型レジスト組成物及びそれを用いたパターン形成方法
JP4541080B2 (ja) * 2004-09-16 2010-09-08 東京応化工業株式会社 反射防止膜形成用組成物およびこれを用いた配線形成方法
WO2006065310A2 (en) 2004-12-17 2006-06-22 Dow Corning Corporation Siloxane resin coating
ATE400672T1 (de) 2004-12-17 2008-07-15 Dow Corning Verfahren zur ausbildung einer antireflexionsbeschichtung
JP4602842B2 (ja) 2005-06-07 2010-12-22 東京応化工業株式会社 反射防止膜形成用組成物、それを用いた反射防止膜
TWI292340B (en) 2005-07-13 2008-01-11 Ind Tech Res Inst Antireflective transparent zeolite hardcoat film, method for fabricating the same, and solution capable of forming said transparent zeolite film
KR100861176B1 (ko) * 2006-01-02 2008-09-30 주식회사 하이닉스반도체 무기계 하드마스크용 조성물 및 이를 이용한 반도체 소자의 제조방법
US20080221263A1 (en) * 2006-08-31 2008-09-11 Subbareddy Kanagasabapathy Coating compositions for producing transparent super-hydrophobic surfaces
WO2007094849A2 (en) * 2006-02-13 2007-08-23 Dow Corning Corporation Antireflective coating material
CN101371196B (zh) 2006-02-13 2012-07-04 陶氏康宁公司 抗反射涂料
JP5087807B2 (ja) * 2006-02-22 2012-12-05 東京応化工業株式会社 有機半導体素子の製造方法及びそれに用いる絶縁膜形成用組成物
JP4548616B2 (ja) 2006-05-15 2010-09-22 信越化学工業株式会社 熱酸発生剤及びこれを含むレジスト下層膜材料、並びにこのレジスト下層膜材料を用いたパターン形成方法
US7399573B2 (en) * 2006-10-25 2008-07-15 International Business Machines Corporation Method for using negative tone silicon-containing resist for e-beam lithography
US8318258B2 (en) 2008-01-08 2012-11-27 Dow Corning Toray Co., Ltd. Silsesquioxane resins
JP2011510133A (ja) * 2008-01-15 2011-03-31 ダウ・コーニング・コーポレイション シルセスキオキサン樹脂
WO2009111122A2 (en) * 2008-03-04 2009-09-11 Dow Corning Corporation Silsesquioxane resins
JP5581224B2 (ja) * 2008-03-05 2014-08-27 ダウ・コーニング・コーポレイション シルセスキオキサン樹脂
JP4813537B2 (ja) 2008-11-07 2011-11-09 信越化学工業株式会社 熱酸発生剤を含有するレジスト下層材料、レジスト下層膜形成基板及びパターン形成方法
KR20110096155A (ko) * 2008-12-10 2011-08-29 다우 코닝 코포레이션 습식 에칭가능한 반사방지 코팅
CN102245674B (zh) 2008-12-10 2014-12-10 陶氏康宁公司 倍半硅氧烷树脂
KR101266291B1 (ko) * 2008-12-30 2013-05-22 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로디바이스의 제조방법
JP2011132322A (ja) * 2009-12-24 2011-07-07 Tokyo Ohka Kogyo Co Ltd 感光性組成物、ハードコート材、及び画像表示装置
JP6086739B2 (ja) * 2013-01-21 2017-03-01 東京応化工業株式会社 絶縁膜形成用組成物、絶縁膜の製造方法、及び絶縁膜
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Also Published As

Publication number Publication date
KR20050084283A (ko) 2005-08-26
TW200423225A (en) 2004-11-01
AU2003302526A1 (en) 2004-06-23
WO2004051376A1 (ja) 2004-06-17
TWI339777B (en) 2011-04-01
TW200707112A (en) 2007-02-16
DE10393808T5 (de) 2005-10-13
US20050282090A1 (en) 2005-12-22
US20060021964A1 (en) 2006-02-02
US20070281098A1 (en) 2007-12-06
TWI328250B (https=) 2010-08-01
KR20050074481A (ko) 2005-07-18

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