TWI339777B - Ladder type silicone copolymer - Google Patents

Ladder type silicone copolymer

Info

Publication number
TWI339777B
TWI339777B TW095130824A TW95130824A TWI339777B TW I339777 B TWI339777 B TW I339777B TW 095130824 A TW095130824 A TW 095130824A TW 95130824 A TW95130824 A TW 95130824A TW I339777 B TWI339777 B TW I339777B
Authority
TW
Taiwan
Prior art keywords
type silicone
ladder type
silicone copolymer
copolymer
ladder
Prior art date
Application number
TW095130824A
Other languages
English (en)
Other versions
TW200707112A (en
Inventor
Taku Hirayama
Tomotaka Yamada
Daisuke Kawana
Kouki Tamura
Kazufumi Sato
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200707112A publication Critical patent/TW200707112A/zh
Application granted granted Critical
Publication of TWI339777B publication Critical patent/TWI339777B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/32—Radiation-absorbing paints
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
TW095130824A 2002-12-02 2003-12-02 Ladder type silicone copolymer TWI339777B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002382898 2002-12-02
JP2003116164 2003-04-21

Publications (2)

Publication Number Publication Date
TW200707112A TW200707112A (en) 2007-02-16
TWI339777B true TWI339777B (en) 2011-04-01

Family

ID=32473768

Family Applications (2)

Application Number Title Priority Date Filing Date
TW092133905A TW200423225A (en) 2002-12-02 2003-12-02 Composition for forming antireflection coating
TW095130824A TWI339777B (en) 2002-12-02 2003-12-02 Ladder type silicone copolymer

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW092133905A TW200423225A (en) 2002-12-02 2003-12-02 Composition for forming antireflection coating

Country Status (6)

Country Link
US (3) US20050282090A1 (zh)
KR (2) KR100639862B1 (zh)
AU (1) AU2003302526A1 (zh)
DE (1) DE10393808T5 (zh)
TW (2) TW200423225A (zh)
WO (1) WO2004051376A1 (zh)

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EP1627007B1 (en) 2003-05-23 2007-10-31 Dow Corning Corporation Siloxane resin-based anti-reflective coating composition having high wet etch rate
JP4294521B2 (ja) * 2004-03-19 2009-07-15 東京応化工業株式会社 ネガ型レジスト組成物及びそれを用いたパターン形成方法
JP4541080B2 (ja) * 2004-09-16 2010-09-08 東京応化工業株式会社 反射防止膜形成用組成物およびこれを用いた配線形成方法
KR101191098B1 (ko) 2004-12-17 2012-10-15 다우 코닝 코포레이션 실록산 수지 피복물
ATE400672T1 (de) 2004-12-17 2008-07-15 Dow Corning Verfahren zur ausbildung einer antireflexionsbeschichtung
JP4602842B2 (ja) 2005-06-07 2010-12-22 東京応化工業株式会社 反射防止膜形成用組成物、それを用いた反射防止膜
TWI292340B (en) 2005-07-13 2008-01-11 Ind Tech Res Inst Antireflective transparent zeolite hardcoat film, method for fabricating the same, and solution capable of forming said transparent zeolite film
KR100861176B1 (ko) * 2006-01-02 2008-09-30 주식회사 하이닉스반도체 무기계 하드마스크용 조성물 및 이를 이용한 반도체 소자의 제조방법
US20080221263A1 (en) * 2006-08-31 2008-09-11 Subbareddy Kanagasabapathy Coating compositions for producing transparent super-hydrophobic surfaces
KR101324052B1 (ko) 2006-02-13 2013-11-01 다우 코닝 코포레이션 반사방지 코팅 재료
WO2007094849A2 (en) * 2006-02-13 2007-08-23 Dow Corning Corporation Antireflective coating material
JP5087807B2 (ja) * 2006-02-22 2012-12-05 東京応化工業株式会社 有機半導体素子の製造方法及びそれに用いる絶縁膜形成用組成物
JP4548616B2 (ja) 2006-05-15 2010-09-22 信越化学工業株式会社 熱酸発生剤及びこれを含むレジスト下層膜材料、並びにこのレジスト下層膜材料を用いたパターン形成方法
US7399573B2 (en) * 2006-10-25 2008-07-15 International Business Machines Corporation Method for using negative tone silicon-containing resist for e-beam lithography
WO2009088600A1 (en) 2008-01-08 2009-07-16 Dow Corning Toray Co., Ltd. Silsesquioxane resins
EP2238198A4 (en) * 2008-01-15 2011-11-16 Dow Corning RESINS BASED ON SILSESQUIOXANE
CN101990551B (zh) 2008-03-04 2012-10-03 陶氏康宁公司 倍半硅氧烷树脂
US8241707B2 (en) * 2008-03-05 2012-08-14 Dow Corning Corporation Silsesquioxane resins
JP4813537B2 (ja) 2008-11-07 2011-11-09 信越化学工業株式会社 熱酸発生剤を含有するレジスト下層材料、レジスト下層膜形成基板及びパターン形成方法
WO2010068336A1 (en) 2008-12-10 2010-06-17 Dow Corning Corporation Silsesquioxane resins
US20110236835A1 (en) * 2008-12-10 2011-09-29 Peng-Fei Fu Silsesquioxane Resins
KR101266291B1 (ko) * 2008-12-30 2013-05-22 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로디바이스의 제조방법
JP2011132322A (ja) * 2009-12-24 2011-07-07 Tokyo Ohka Kogyo Co Ltd 感光性組成物、ハードコート材、及び画像表示装置
JP6086739B2 (ja) * 2013-01-21 2017-03-01 東京応化工業株式会社 絶縁膜形成用組成物、絶縁膜の製造方法、及び絶縁膜
US9006355B1 (en) 2013-10-04 2015-04-14 Burning Bush Group, Llc High performance silicon-based compositions
JP6660023B2 (ja) * 2014-11-19 2020-03-04 日産化学株式会社 湿式除去が可能なシリコン含有レジスト下層膜形成組成物
TWI776915B (zh) 2017-07-06 2022-09-11 日商日產化學股份有限公司 含有鹼性顯影液可溶性矽之阻劑下層膜形成組成物

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US4745169A (en) * 1985-05-10 1988-05-17 Hitachi, Ltd. Alkali-soluble siloxane polymer, silmethylene polymer, and polyorganosilsesquioxane polymer
JPS6390534A (ja) * 1986-10-06 1988-04-21 Hitachi Ltd アルカリ可溶性ラダ−シリコ−ン重合体
JPS63101427A (ja) * 1986-10-17 1988-05-06 Hitachi Ltd アルカリ可溶性ラダ−シリコ−ン
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US6087064A (en) * 1998-09-03 2000-07-11 International Business Machines Corporation Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method
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US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
JP4187879B2 (ja) * 1999-08-06 2008-11-26 東京応化工業株式会社 感放射線レジスト組成物
JP4622061B2 (ja) * 2000-07-27 2011-02-02 Ｊｓｒ株式会社 レジスト下層膜用組成物およびその製造方法
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Also Published As

Publication number Publication date
TW200707112A (en) 2007-02-16
KR20050084283A (ko) 2005-08-26
US20050282090A1 (en) 2005-12-22
TWI328250B (zh) 2010-08-01
US20060021964A1 (en) 2006-02-02
AU2003302526A1 (en) 2004-06-23
WO2004051376A1 (ja) 2004-06-17
KR100639862B1 (ko) 2006-10-31
KR20050074481A (ko) 2005-07-18
US20070281098A1 (en) 2007-12-06
TW200423225A (en) 2004-11-01
DE10393808T5 (de) 2005-10-13

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees