KR100637756B1 - 광 센서를 갖는 전자 구성소자 - Google Patents

광 센서를 갖는 전자 구성소자 Download PDF

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Publication number
KR100637756B1
KR100637756B1 KR1020000032233A KR20000032233A KR100637756B1 KR 100637756 B1 KR100637756 B1 KR 100637756B1 KR 1020000032233 A KR1020000032233 A KR 1020000032233A KR 20000032233 A KR20000032233 A KR 20000032233A KR 100637756 B1 KR100637756 B1 KR 100637756B1
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South Korea
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region
image sensing
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area
edge
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Expired - Lifetime
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KR1020000032233A
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English (en)
Korean (ko)
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KR20010029795A (ko
Inventor
제니퍼제이. 패터슨
마크에스. 스웬슨
클리포드아이. 드로울리
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프리스케일 세미컨덕터, 인크.
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Publication of KR20010029795A publication Critical patent/KR20010029795A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/152—One-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020000032233A 1999-07-06 2000-06-12 광 센서를 갖는 전자 구성소자 Expired - Lifetime KR100637756B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/347,552 1999-07-06
US09/347,552 US6476426B1 (en) 1999-07-06 1999-07-06 Electronic component and method for improving pixel charge transfer in the electronic component
US9/347,552 1999-07-06

Publications (2)

Publication Number Publication Date
KR20010029795A KR20010029795A (ko) 2001-04-16
KR100637756B1 true KR100637756B1 (ko) 2006-10-23

Family

ID=23364207

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000032233A Expired - Lifetime KR100637756B1 (ko) 1999-07-06 2000-06-12 광 센서를 갖는 전자 구성소자

Country Status (5)

Country Link
US (1) US6476426B1 (enExample)
JP (1) JP4709351B2 (enExample)
KR (1) KR100637756B1 (enExample)
CN (1) CN1175495C (enExample)
TW (1) TW459393B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100574971B1 (ko) * 2004-02-17 2006-05-02 삼성전자주식회사 멀티-게이트 구조의 반도체 소자 및 그 제조 방법
JP5427173B2 (ja) * 2008-06-05 2014-02-26 本田技研工業株式会社 光受信機
JP7455525B2 (ja) * 2018-07-17 2024-03-26 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の製造方法、および電子機器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4484210A (en) 1980-09-05 1984-11-20 Nippon Electric Co., Ltd. Solid-state imaging device having a reduced image lag
JPS60170383A (ja) * 1984-02-14 1985-09-03 Mitsubishi Electric Corp 固体撮像素子
JPH02219270A (ja) 1989-02-20 1990-08-31 Nec Corp 固体撮像装置
JPH05283666A (ja) 1992-03-30 1993-10-29 Sony Corp 固体撮像素子
JP2825702B2 (ja) 1992-05-20 1998-11-18 シャープ株式会社 固体撮像素子
JPH05347401A (ja) * 1992-06-15 1993-12-27 Matsushita Electron Corp 固体撮像素子
JP2699841B2 (ja) 1993-12-10 1998-01-19 日本電気株式会社 固体撮像装置
KR0136934B1 (ko) 1994-02-23 1998-04-24 문정환 선형 고체영상소자
JP3482689B2 (ja) * 1994-05-27 2003-12-22 ソニー株式会社 固体撮像装置及びこれを用いたバーコード読取り装置
US5488239A (en) 1994-07-14 1996-01-30 Goldstar Electron Co., Ltd. Solid state image sensor with shaped photodiodes
US5625210A (en) 1995-04-13 1997-04-29 Eastman Kodak Company Active pixel sensor integrated with a pinned photodiode
JPH09289301A (ja) * 1996-04-22 1997-11-04 Nikon Corp 固体撮像装置
US5903021A (en) 1997-01-17 1999-05-11 Eastman Kodak Company Partially pinned photodiode for solid state image sensors
US6657665B1 (en) * 1998-12-31 2003-12-02 Eastman Kodak Company Active Pixel Sensor with wired floating diffusions and shared amplifier

Also Published As

Publication number Publication date
CN1175495C (zh) 2004-11-10
JP2001036061A (ja) 2001-02-09
US6476426B1 (en) 2002-11-05
TW459393B (en) 2001-10-11
CN1283872A (zh) 2001-02-14
KR20010029795A (ko) 2001-04-16
JP4709351B2 (ja) 2011-06-22

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