CN1283872A - 改善电子元件中的像素电荷转移的电子元件和方法 - Google Patents
改善电子元件中的像素电荷转移的电子元件和方法 Download PDFInfo
- Publication number
- CN1283872A CN1283872A CN00119938A CN00119938A CN1283872A CN 1283872 A CN1283872 A CN 1283872A CN 00119938 A CN00119938 A CN 00119938A CN 00119938 A CN00119938 A CN 00119938A CN 1283872 A CN1283872 A CN 1283872A
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- China
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- edge
- region
- image sensing
- transfer gate
- electronic component
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Links
- 238000000034 method Methods 0.000 title abstract description 10
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 12
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14825—Linear CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/347,552 | 1999-07-06 | ||
US09/347,552 US6476426B1 (en) | 1999-07-06 | 1999-07-06 | Electronic component and method for improving pixel charge transfer in the electronic component |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1283872A true CN1283872A (zh) | 2001-02-14 |
CN1175495C CN1175495C (zh) | 2004-11-10 |
Family
ID=23364207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB001199382A Expired - Fee Related CN1175495C (zh) | 1999-07-06 | 2000-07-03 | 改善电子元件中的像素电荷转移的电子元件和方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6476426B1 (zh) |
JP (1) | JP4709351B2 (zh) |
KR (1) | KR100637756B1 (zh) |
CN (1) | CN1175495C (zh) |
TW (1) | TW459393B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5427173B2 (ja) * | 2008-06-05 | 2014-02-26 | 本田技研工業株式会社 | 光受信機 |
JP7455525B2 (ja) * | 2018-07-17 | 2024-03-26 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の製造方法、および電子機器 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4484210A (en) | 1980-09-05 | 1984-11-20 | Nippon Electric Co., Ltd. | Solid-state imaging device having a reduced image lag |
JPS60170383A (ja) * | 1984-02-14 | 1985-09-03 | Mitsubishi Electric Corp | 固体撮像素子 |
JPH02219270A (ja) | 1989-02-20 | 1990-08-31 | Nec Corp | 固体撮像装置 |
JPH05283666A (ja) | 1992-03-30 | 1993-10-29 | Sony Corp | 固体撮像素子 |
JP2825702B2 (ja) | 1992-05-20 | 1998-11-18 | シャープ株式会社 | 固体撮像素子 |
JPH05347401A (ja) * | 1992-06-15 | 1993-12-27 | Matsushita Electron Corp | 固体撮像素子 |
JP2699841B2 (ja) | 1993-12-10 | 1998-01-19 | 日本電気株式会社 | 固体撮像装置 |
KR0136934B1 (ko) | 1994-02-23 | 1998-04-24 | 문정환 | 선형 고체영상소자 |
JP3482689B2 (ja) * | 1994-05-27 | 2003-12-22 | ソニー株式会社 | 固体撮像装置及びこれを用いたバーコード読取り装置 |
US5488239A (en) | 1994-07-14 | 1996-01-30 | Goldstar Electron Co., Ltd. | Solid state image sensor with shaped photodiodes |
US5625210A (en) | 1995-04-13 | 1997-04-29 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
JPH09289301A (ja) * | 1996-04-22 | 1997-11-04 | Nikon Corp | 固体撮像装置 |
US5903021A (en) | 1997-01-17 | 1999-05-11 | Eastman Kodak Company | Partially pinned photodiode for solid state image sensors |
US6657665B1 (en) * | 1998-12-31 | 2003-12-02 | Eastman Kodak Company | Active Pixel Sensor with wired floating diffusions and shared amplifier |
-
1999
- 1999-07-06 US US09/347,552 patent/US6476426B1/en not_active Expired - Lifetime
-
2000
- 2000-04-20 TW TW089107460A patent/TW459393B/zh not_active IP Right Cessation
- 2000-06-01 JP JP2000163965A patent/JP4709351B2/ja not_active Expired - Lifetime
- 2000-06-12 KR KR1020000032233A patent/KR100637756B1/ko active IP Right Grant
- 2000-07-03 CN CNB001199382A patent/CN1175495C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2001036061A (ja) | 2001-02-09 |
TW459393B (en) | 2001-10-11 |
CN1175495C (zh) | 2004-11-10 |
JP4709351B2 (ja) | 2011-06-22 |
KR100637756B1 (ko) | 2006-10-23 |
US6476426B1 (en) | 2002-11-05 |
KR20010029795A (ko) | 2001-04-16 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: TANGSONG CO., LTD. Free format text: FORMER OWNER: FREEDOM SEMICONDUCTOR CORP. Effective date: 20100727 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: THE USA TEXAS TO: DELAWARE STATE, THE USA |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100727 Address after: Delaware Patentee after: Tong song Co.,Ltd. Address before: Texas, USA Patentee before: FreeScale Semiconductor |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20041110 Termination date: 20130703 |