WO2008136634A1 - A unit pixel of the imagesensor having a high sensitive photodiode - Google Patents

A unit pixel of the imagesensor having a high sensitive photodiode Download PDF

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Publication number
WO2008136634A1
WO2008136634A1 PCT/KR2008/002547 KR2008002547W WO2008136634A1 WO 2008136634 A1 WO2008136634 A1 WO 2008136634A1 KR 2008002547 W KR2008002547 W KR 2008002547W WO 2008136634 A1 WO2008136634 A1 WO 2008136634A1
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Prior art keywords
photodiode
unit pixel
insulating layer
transfer gates
image sensor
Prior art date
Application number
PCT/KR2008/002547
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French (fr)
Inventor
Byoung Su Lee
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Siliconfile Technologies Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Publication of WO2008136634A1 publication Critical patent/WO2008136634A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers

Definitions

  • the present invention relates to a unit pixel of an image sensor having a large area photodiode with high sensitivity, and more particularly, to a unit pixel of an image sensor having a high sensitivity photodiode which includes a plurality of transfer gates on the photodiode having a large area to effectively transfer photocharges generated at the photodiode to a floating diffusion region.
  • a photosensitive device having high sensitivity is used to sense a small number of photons incident in a state of low-illuminance and generally includes a phototransistor, a photomultiplier, or the like.
  • High sensitivity image sensors are widely used for cars, surveillance cameras, medical purposes such as bioscanners, and the like.
  • High sensitivity image sensors that are generally used include phototransistors, avalanche photodiodes, or the like.
  • the photo- transistor cannot easily remove noises and the avalanche photodiode requires a high voltage, so that the phototransistor and the avalanche photodiode cannot be easily used. Therefore, generally, a charge-coupled device (CCD) having low sensitivity is used.
  • An image sensor for medical uses includes the CCD due to the aforementioned problems and uses a cooling method in order to reduce noises.
  • a method of binding a number of photodiodes into a unit can be used. For example, when N photodiodes are used as a single unit, sensitivity for incident light is increased N times. However, when light with very low intensity is incident, a dead zone where the photodiode does not react exists, so that the dead zone is also increased N times.
  • the dead zone is generated by a barrier existing between the photodiode and the floating diffusion region, so that the method of grouping a plurality of photodiodes into a unit to improve sensitivity has a limitation.
  • FIG. 1 is a view illustrating sensitivity represented when a method of adding outputs of photodiodes is used.
  • FIG. 2 is a view illustrating sensitivity represented when a method of adding areas of photodiodes is used.
  • the total dead zone is a sum of added dead zones of the photodiodes.
  • a dead zone in an output of a photodiode having an area of two photodiodes has a constant value.
  • the present invention provides a unit pixel of an image sensor having a high sensitivity photodiode which uses a photodiode having a large area to guarantee high sensitivity, includes a plurality of transfer gates on a single photodiode to transfer photocharges generated at the photodiode to a floating diffusion region without losses.
  • a unit pixel of an image sensor having a high sensitivity photodiode including: a first conductive type substrate; a second conductive type large area photodiode formed on the substrate; two or more transfer gates collecting and transferring photocharges generated in the photodiode; and a floating diffusion area in which the photocharges collected and transferred by the transfer gates are accumulated.
  • the unit pixel may further include a first conductive well on the substrate.
  • the unit pixel may further include an insulating layer formed on the transfer gates.
  • a color filter may be formed on the insulating layer.
  • the unit pixel may further include two or more microlenses on the insulating layer.
  • a color filter may be formed on a rear surface of the insulating layer.
  • the unit pixel may further include two or more microlenses on the rear surface of the insulating layer.
  • FIG. 1 is a view illustrating sensitivity represented when a method of adding outputs of photodiodes is used.
  • FIG. 2 is a view illustrating sensitivity represented when a method of adding areas of photodiodes is used.
  • FIG. 3 is a schematic view illustrating a structure of a unit pixel of an image sensor according to the present invention.
  • FIGS. 4 and 5 are views for illustrating paths through which light is incident on the unit pixel of the image sensor according to the present invention.
  • FIG. 6 is a view illustrating operations of hole-electron in the photodiode when light is incident on the unit pixel of the image sensor according to the present invention.
  • FIG. 7 is a view illustrating operations of transferring charges collected by a photodiode according to an embodiment of the present invention. Best Mode for Carrying Out the Invention
  • FIG. 3 is a schematic view illustrating a structure of a unit pixel of an image sensor having a high sensitivity photodiode according to the present invention.
  • the unit pixel of the image sensor having the high sensitivity photodiode includes a first conductive type substrate 210, a first conductive type well 220 formed on the substrate 210, a second conductive type large area photodiode 230 formed on the first conductive type well 220, two or more transfer gates 271 for collecting and transferring photocharges that generated in the photodiode 230, a gate oxide layer 250 for insulating the photodiode 230 from the transfer gates 271, a floating diffusion region 240 in which the photocharges collected and transferred by the transfer gates are accumulated, and an insulating layer 260 formed on the transfer gates 271.
  • an upper portion 272 of the photodiode 230 may be doped with the first conductive type with high density.
  • a color filter 280 may be disposed on the insulating layer 260.
  • 290 are disposed on the surface 280 of the insulating layer 260.
  • N-MOS N-channel metal oxide semiconductor
  • the P-well 220 is formed on the substrate 210 having a P+ type, and the photodiode 230 having an N type density is formed in the P-well 220.
  • a plurality of the transfer gates 271 are formed on the P-well 220, and a lower portion of the transfer gates 271 is insulated by the gate oxide layer 250.
  • the floating diffusion region 240 to which the photocharges formed by the photodiodes are moved is doped with N+.
  • the insulating layer 260 made of an oxide layer based insulating material is formed on the transfer gates 271.
  • a portion of the gate oxide layer 250 is removed to expose the floating diffusion region 240, and a metal wire is formed on the portion so that the pho- tocharges accumulated in the floating diffusion region 240 can be delivered to a drive transistor (not shown).
  • the unit pixel of the image sensor according to the present invention includes a plurality of the transfer gates 271 for the single large area photodiode 230. Therefore, the unit pixel can maintain high sensitivity and transfer the photocharges generated by the large area photodiode 230 to the floating diffusion region 240 without losses.
  • FIGS. 4 and 5 are views for illustrating paths through which light is incident on the unit pixel of the image sensor according to the present invention.
  • the light incident on the unit pixel of the image sensor according to the present invention may be incident between the transfer gates or on the substrate.
  • FIG. 6 is a view illustrating operations of hole-electron in the photodiode when light is incident on the unit pixel of the image sensor according to the present invention.
  • a region where a photodiode 530 is formed has a positive voltage by a transfer gate 571a, and when the transfer gate 571a is turned off, the region is isolated. Thereafter, when light is incident, holes and electrons are generated at the region of the photodiode 530.
  • FIG. 7 is a view illustrating operations of transferring charges collected by a photodiode according to an embodiment of the present invention.
  • the unit pixel of the image sensor having the high sensitivity photodiode according to the present invention has advantages in that the photodiode has a large area to have high sensitivity. In addition, the unit pixel has a small dead zone and excellent characteristics against low-illuminance. In addition, a plurality of transfer gates are provided to a single photodiode, so that losses that may occur in the operations of transferring photocharges can be minimized, and excellent photosensitivity can be obtained.

Abstract

The present invention relates to a unit pixel of an image sensor having a large area photodiode with high sensitivity, and more particularly, to a unit pixel of an image sensor having a high sensitivity photodiode which includes a plurality of transfer gates on the photodiode having a large area to effectively transfer photocharges generated at the photodiode to a floating diffusion region.

Description

Description
A UNIT PIXEL OF THE IMAGESENSOR HAVING A HIGH
SENSITIVE PHOTODIODE
Technical Field
[1] The present invention relates to a unit pixel of an image sensor having a large area photodiode with high sensitivity, and more particularly, to a unit pixel of an image sensor having a high sensitivity photodiode which includes a plurality of transfer gates on the photodiode having a large area to effectively transfer photocharges generated at the photodiode to a floating diffusion region. Background Art
[2] A photosensitive device having high sensitivity is used to sense a small number of photons incident in a state of low-illuminance and generally includes a phototransistor, a photomultiplier, or the like. High sensitivity image sensors are widely used for cars, surveillance cameras, medical purposes such as bioscanners, and the like.
[3] High sensitivity image sensors that are generally used include phototransistors, avalanche photodiodes, or the like. However, there are problems in that the photo- transistor cannot easily remove noises and the avalanche photodiode requires a high voltage, so that the phototransistor and the avalanche photodiode cannot be easily used. Therefore, generally, a charge-coupled device (CCD) having low sensitivity is used. An image sensor for medical uses includes the CCD due to the aforementioned problems and uses a cooling method in order to reduce noises.
[4] In addition, in order to increase sensitivity of a general photodiode, a method of binding a number of photodiodes into a unit can be used. For example, when N photodiodes are used as a single unit, sensitivity for incident light is increased N times. However, when light with very low intensity is incident, a dead zone where the photodiode does not react exists, so that the dead zone is also increased N times.
[5] The dead zone is generated by a barrier existing between the photodiode and the floating diffusion region, so that the method of grouping a plurality of photodiodes into a unit to improve sensitivity has a limitation.
[6] FIG. 1 is a view illustrating sensitivity represented when a method of adding outputs of photodiodes is used. FIG. 2 is a view illustrating sensitivity represented when a method of adding areas of photodiodes is used.
[7] As described above, in the method of adding outputs of two photodiodes, the total dead zone is a sum of added dead zones of the photodiodes. On the contrary, a dead zone in an output of a photodiode having an area of two photodiodes has a constant value. [8] Therefore, in terms of the dead zone, the method of using a large area photodiode to achieve high sensitivity is more proper.
[9] However, in this method, since the photodiode has the large area, photocharges generated from a far distance cannot be easily transferred to the floating diffusion region.
Disclosure of Invention Technical Problem
[10] The present invention provides a unit pixel of an image sensor having a high sensitivity photodiode which uses a photodiode having a large area to guarantee high sensitivity, includes a plurality of transfer gates on a single photodiode to transfer photocharges generated at the photodiode to a floating diffusion region without losses. Technical Solution
[11] According to an aspect of the present invention, there is provided a unit pixel of an image sensor having a high sensitivity photodiode including: a first conductive type substrate; a second conductive type large area photodiode formed on the substrate; two or more transfer gates collecting and transferring photocharges generated in the photodiode; and a floating diffusion area in which the photocharges collected and transferred by the transfer gates are accumulated.
[12] In the above aspect of the present invention, the unit pixel may further include a first conductive well on the substrate.
[13] In addition, the unit pixel may further include an insulating layer formed on the transfer gates.
[14] In addition, a color filter may be formed on the insulating layer.
[15] In addition, the unit pixel may further include two or more microlenses on the insulating layer.
[16] In addition, a color filter may be formed on a rear surface of the insulating layer.
[17] In addition, the unit pixel may further include two or more microlenses on the rear surface of the insulating layer. Brief Description of the Drawings
[18] FIG. 1 is a view illustrating sensitivity represented when a method of adding outputs of photodiodes is used.
[19] FIG. 2 is a view illustrating sensitivity represented when a method of adding areas of photodiodes is used.
[20] FIG. 3 is a schematic view illustrating a structure of a unit pixel of an image sensor according to the present invention.
[21] FIGS. 4 and 5 are views for illustrating paths through which light is incident on the unit pixel of the image sensor according to the present invention. [22] FIG. 6 is a view illustrating operations of hole-electron in the photodiode when light is incident on the unit pixel of the image sensor according to the present invention.
[23] FIG. 7 is a view illustrating operations of transferring charges collected by a photodiode according to an embodiment of the present invention. Best Mode for Carrying Out the Invention
[24] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the attached drawings.
[25] FIG. 3 is a schematic view illustrating a structure of a unit pixel of an image sensor having a high sensitivity photodiode according to the present invention.
[26] Referring to FIG. 3, the unit pixel of the image sensor having the high sensitivity photodiode according to the present invention includes a first conductive type substrate 210, a first conductive type well 220 formed on the substrate 210, a second conductive type large area photodiode 230 formed on the first conductive type well 220, two or more transfer gates 271 for collecting and transferring photocharges that generated in the photodiode 230, a gate oxide layer 250 for insulating the photodiode 230 from the transfer gates 271, a floating diffusion region 240 in which the photocharges collected and transferred by the transfer gates are accumulated, and an insulating layer 260 formed on the transfer gates 271.
[27] In a low-illuminance environment, dark currents operate as an important factor.
Therefore, more preferably, as illustrated in FIG. 3, in order to reduce the dark currents, an upper portion 272 of the photodiode 230 may be doped with the first conductive type with high density.
[28] In addition, in order to selectively sense incident light, a color filter 280 may be disposed on the insulating layer 260.
[29] In addition, in order to effectively collect the incident light, two or more microlenses
290 are disposed on the surface 280 of the insulating layer 260.
[30] A structure of the unit pixel of the image sensor having the high sensitivity photodiode according to the present invention illustrated in FIG. 3 is described with reference to an N-channel metal oxide semiconductor (N-MOS).
[31] In the N-MOS, the P-well 220 is formed on the substrate 210 having a P+ type, and the photodiode 230 having an N type density is formed in the P-well 220. A plurality of the transfer gates 271 are formed on the P-well 220, and a lower portion of the transfer gates 271 is insulated by the gate oxide layer 250.
[32] Upper portions of the photodiode 230 at which the transfer gates 271 are not formed are doped with P+ to reduce the dark currents.
[33] In addition, the floating diffusion region 240 to which the photocharges formed by the photodiodes are moved is doped with N+. [34] The insulating layer 260 made of an oxide layer based insulating material is formed on the transfer gates 271.
[35] In addition, a portion of the gate oxide layer 250 is removed to expose the floating diffusion region 240, and a metal wire is formed on the portion so that the pho- tocharges accumulated in the floating diffusion region 240 can be delivered to a drive transistor (not shown).
[36] As described above, the unit pixel of the image sensor according to the present invention includes a plurality of the transfer gates 271 for the single large area photodiode 230. Therefore, the unit pixel can maintain high sensitivity and transfer the photocharges generated by the large area photodiode 230 to the floating diffusion region 240 without losses.
[37] FIGS. 4 and 5 are views for illustrating paths through which light is incident on the unit pixel of the image sensor according to the present invention. Referring to FIGS. 4 and 5, the light incident on the unit pixel of the image sensor according to the present invention may be incident between the transfer gates or on the substrate.
[38] FIG. 6 is a view illustrating operations of hole-electron in the photodiode when light is incident on the unit pixel of the image sensor according to the present invention.
[39] In the aforementioned structure, a region where a photodiode 530 is formed has a positive voltage by a transfer gate 571a, and when the transfer gate 571a is turned off, the region is isolated. Thereafter, when light is incident, holes and electrons are generated at the region of the photodiode 530.
[40] Light is incident between regions where the transfer gates 571 are formed, and when light is incident on the region of the photodiode 530, a pair of hole-electron is generated. The hole of the pair of hole-electron generated by the incident light is discharged into a P+ substrate 510 and only the electron exists in the region of the photodiode 530. As described above, a time to collect electrons is called an integration time, and the number of the electrons is linearly proportional to intensity of the incident light, the integration time, and an area of the photodiode.
[41] FIG. 7 is a view illustrating operations of transferring charges collected by a photodiode according to an embodiment of the present invention.
[42] Referring to FIG. 7, when a positive voltage is applied to a transfer gate 671b, the transfer gate 671b having the positive voltage attracts neighboring electrons. When a positive voltage is applied to an adjacent transfer gate 671c, the transfer gate 671c attracts the moved electrons. In this manner, the electrons can be moved to the last transfer gate 67 If.
[43] After a positive voltage is applied to the last transfer gate 67 If and a voltage of 0 is applied to the last transfer gate 67 If, all of the photocharges generated in the photodiode 630 can be transferred to a floating diffusion region 640. [44] The aforementioned operations are similar to operations of sequentially transferring photocharges of pixels of a charge-coupled device (CCD). However, the unit pixel of the image sensor according to the present invention is different from the CCD in that several transfer gates 671a to 67 If are formed on the single photodiode 630 so as to transfer photocharges generated at a large area to the single floating diffusion region 640.
[45] While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims. Industrial Applicability
[46] The unit pixel of the image sensor having the high sensitivity photodiode according to the present invention has advantages in that the photodiode has a large area to have high sensitivity. In addition, the unit pixel has a small dead zone and excellent characteristics against low-illuminance. In addition, a plurality of transfer gates are provided to a single photodiode, so that losses that may occur in the operations of transferring photocharges can be minimized, and excellent photosensitivity can be obtained.

Claims

Claims
[1] A unit pixel of an image sensor having a high sensitivity photodiode comprising: a first conductive type substrate; a second conductive type large area photodiode formed on the substrate; two or more transfer gates collecting and transferring photocharges generated in the photodiode; and a floating diffusion area in which the photocharges collected and transferred by the transfer gates are accumulated.
[2] The unit pixel of claim 1, further comprising a first conductive well on the substrate.
[3] The unit pixel of claim 1 or 2, further comprising an insulating layer formed on the transfer gates.
[4] The unit pixel of claim 3, wherein a color filter is formed on the insulating layer.
[5] The unit pixel of claim 4, further comprising two or more microlenses on the insulating layer. [6] The unit pixel of claim 3, wherein a color filter is formed on a rear surface of the insulating layer. [7] The unit pixel of claim 6, further comprising two or more microlenses on the rear surface of the insulating layer.
PCT/KR2008/002547 2007-05-08 2008-05-07 A unit pixel of the imagesensor having a high sensitive photodiode WO2008136634A1 (en)

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Cited By (1)

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KR101167361B1 (en) * 2009-08-25 2012-07-19 삼성전기주식회사 Silicon photoelectric multiplier with microlens

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US20050280108A1 (en) * 2004-06-22 2005-12-22 Dongbuanam Semiconductor Inc. CMOS image sensor

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Publication number Priority date Publication date Assignee Title
CN110447104A (en) * 2017-03-24 2019-11-12 索尼半导体解决方案公司 Sensor chip and electronic equipment
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