KR100603682B1 - 플라즈마 한정용 웨이퍼 영역 압력 제어 장치 및 방법 - Google Patents
플라즈마 한정용 웨이퍼 영역 압력 제어 장치 및 방법 Download PDFInfo
- Publication number
- KR100603682B1 KR100603682B1 KR1020037004805A KR20037004805A KR100603682B1 KR 100603682 B1 KR100603682 B1 KR 100603682B1 KR 1020037004805 A KR1020037004805 A KR 1020037004805A KR 20037004805 A KR20037004805 A KR 20037004805A KR 100603682 B1 KR100603682 B1 KR 100603682B1
- Authority
- KR
- South Korea
- Prior art keywords
- confinement
- movable
- ring
- confinement ring
- block
- Prior art date
Links
- 238000000034 method Methods 0.000 claims abstract description 37
- 125000006850 spacer group Chemical group 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 21
- 239000012530 fluid Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 0 *=C1C[C@@](CC2)C2C1 Chemical compound *=C1C[C@@](CC2)C2C1 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007937 lozenge Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- ing And Chemical Polishing (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/684,695 | 2000-10-04 | ||
US09/684,695 US6492774B1 (en) | 2000-10-04 | 2000-10-04 | Wafer area pressure control for plasma confinement |
PCT/US2001/042332 WO2002029848A2 (en) | 2000-10-04 | 2001-09-26 | Wafer area pressure control for plasma confinement |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030051698A KR20030051698A (ko) | 2003-06-25 |
KR100603682B1 true KR100603682B1 (ko) | 2006-07-20 |
Family
ID=24749169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020037004805A KR100603682B1 (ko) | 2000-10-04 | 2001-09-26 | 플라즈마 한정용 웨이퍼 영역 압력 제어 장치 및 방법 |
Country Status (9)
Country | Link |
---|---|
US (3) | US6492774B1 (ja) |
EP (1) | EP1323179B1 (ja) |
JP (2) | JP5100952B2 (ja) |
KR (1) | KR100603682B1 (ja) |
CN (1) | CN1322539C (ja) |
AU (1) | AU2001296916A1 (ja) |
RU (1) | RU2270492C2 (ja) |
TW (1) | TW587272B (ja) |
WO (1) | WO2002029848A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150008819A (ko) * | 2013-07-15 | 2015-01-23 | 램 리써치 코포레이션 | 하이브리드 피처 에칭 및 베벨 에칭 시스템 |
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US6492774B1 (en) * | 2000-10-04 | 2002-12-10 | Lam Research Corporation | Wafer area pressure control for plasma confinement |
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US6936135B2 (en) * | 2002-04-17 | 2005-08-30 | Lam Research Corporation | Twist-N-Lock wafer area pressure ring and assembly for reducing particulate contaminant in a plasma processing chamber |
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US8522715B2 (en) * | 2008-01-08 | 2013-09-03 | Lam Research Corporation | Methods and apparatus for a wide conductance kit |
TWI516175B (zh) * | 2008-02-08 | 2016-01-01 | 蘭姆研究公司 | 在電漿處理腔室中穩定壓力的方法及其程式儲存媒體 |
US20090286397A1 (en) * | 2008-05-15 | 2009-11-19 | Lam Research Corporation | Selective inductive double patterning |
US8627783B2 (en) * | 2008-12-19 | 2014-01-14 | Lam Research Corporation | Combined wafer area pressure control and plasma confinement assembly |
US8869741B2 (en) * | 2008-12-19 | 2014-10-28 | Lam Research Corporation | Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber |
US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
US8313612B2 (en) * | 2009-03-24 | 2012-11-20 | Lam Research Corporation | Method and apparatus for reduction of voltage potential spike during dechucking |
KR101559913B1 (ko) * | 2009-06-25 | 2015-10-27 | 삼성전자주식회사 | 플라즈마 건식 식각 장치 |
US8617347B2 (en) * | 2009-08-06 | 2013-12-31 | Applied Materials, Inc. | Vacuum processing chambers incorporating a moveable flow equalizer |
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US8992722B2 (en) * | 2009-09-01 | 2015-03-31 | Lam Research Corporation | Direct drive arrangement to control confinement rings positioning and methods thereof |
US8501631B2 (en) | 2009-11-19 | 2013-08-06 | Lam Research Corporation | Plasma processing system control based on RF voltage |
JP5597463B2 (ja) | 2010-07-05 | 2014-10-01 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
US20130059448A1 (en) * | 2011-09-07 | 2013-03-07 | Lam Research Corporation | Pulsed Plasma Chamber in Dual Chamber Configuration |
US9076826B2 (en) * | 2010-09-24 | 2015-07-07 | Lam Research Corporation | Plasma confinement ring assembly for plasma processing chambers |
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US9368329B2 (en) | 2012-02-22 | 2016-06-14 | Lam Research Corporation | Methods and apparatus for synchronizing RF pulses in a plasma processing system |
US10128090B2 (en) | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
US9502216B2 (en) | 2013-01-31 | 2016-11-22 | Lam Research Corporation | Using modeling to determine wafer bias associated with a plasma system |
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US9320126B2 (en) | 2012-12-17 | 2016-04-19 | Lam Research Corporation | Determining a value of a variable on an RF transmission model |
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US9043525B2 (en) | 2012-12-14 | 2015-05-26 | Lam Research Corporation | Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool |
US9155182B2 (en) | 2013-01-11 | 2015-10-06 | Lam Research Corporation | Tuning a parameter associated with plasma impedance |
US9620337B2 (en) | 2013-01-31 | 2017-04-11 | Lam Research Corporation | Determining a malfunctioning device in a plasma system |
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US20170278679A1 (en) * | 2016-03-24 | 2017-09-28 | Lam Research Corporation | Method and apparatus for controlling process within wafer uniformity |
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US10410832B2 (en) | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
CN110767568B (zh) * | 2018-07-26 | 2022-05-27 | 北京北方华创微电子装备有限公司 | 压力调节组件、下电极装置、工艺腔室和半导体处理设备 |
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US6068784A (en) * | 1989-10-03 | 2000-05-30 | Applied Materials, Inc. | Process used in an RF coupled plasma reactor |
US5246532A (en) | 1990-10-26 | 1993-09-21 | Mitsubishi Denki Kabushiki Kaisha | Plasma processing apparatus |
JP2638443B2 (ja) | 1993-08-31 | 1997-08-06 | 日本電気株式会社 | ドライエッチング方法およびドライエッチング装置 |
US5569356A (en) * | 1995-05-19 | 1996-10-29 | Lam Research Corporation | Electrode clamping assembly and method for assembly and use thereof |
US5534751A (en) | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
JPH1012578A (ja) * | 1996-06-26 | 1998-01-16 | Mitsubishi Electric Corp | ウエハ・支持基板貼付け方法,及びウエハ・支持基板貼付け装置 |
JP3468446B2 (ja) * | 1997-05-20 | 2003-11-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6008130A (en) * | 1997-08-14 | 1999-12-28 | Vlsi Technology, Inc. | Polymer adhesive plasma confinement ring |
US6019060A (en) * | 1998-06-24 | 2000-02-01 | Lam Research Corporation | Cam-based arrangement for positioning confinement rings in a plasma processing chamber |
US5998932A (en) * | 1998-06-26 | 1999-12-07 | Lam Research Corporation | Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber |
JP2000058512A (ja) | 1998-08-03 | 2000-02-25 | Matsushita Electric Ind Co Ltd | プラズマ処理装置および処理方法 |
US6178919B1 (en) * | 1998-12-28 | 2001-01-30 | Lam Research Corporation | Perforated plasma confinement ring in plasma reactors |
US6354241B1 (en) * | 1999-07-15 | 2002-03-12 | Applied Materials, Inc. | Heated electrostatic particle trap for in-situ vacuum line cleaning of a substrated processing |
US6350317B1 (en) * | 1999-12-30 | 2002-02-26 | Lam Research Corporation | Linear drive system for use in a plasma processing system |
US6261408B1 (en) * | 2000-02-16 | 2001-07-17 | Applied Materials, Inc. | Method and apparatus for semiconductor processing chamber pressure control |
US6433484B1 (en) * | 2000-08-11 | 2002-08-13 | Lam Research Corporation | Wafer area pressure control |
US6492774B1 (en) * | 2000-10-04 | 2002-12-10 | Lam Research Corporation | Wafer area pressure control for plasma confinement |
US6936135B2 (en) * | 2002-04-17 | 2005-08-30 | Lam Research Corporation | Twist-N-Lock wafer area pressure ring and assembly for reducing particulate contaminant in a plasma processing chamber |
-
2000
- 2000-10-04 US US09/684,695 patent/US6492774B1/en not_active Expired - Lifetime
-
2001
- 2001-09-26 WO PCT/US2001/042332 patent/WO2002029848A2/en active IP Right Grant
- 2001-09-26 KR KR1020037004805A patent/KR100603682B1/ko active IP Right Grant
- 2001-09-26 JP JP2002533335A patent/JP5100952B2/ja not_active Expired - Lifetime
- 2001-09-26 AU AU2001296916A patent/AU2001296916A1/en not_active Abandoned
- 2001-09-26 CN CNB018200532A patent/CN1322539C/zh not_active Expired - Lifetime
- 2001-09-26 EP EP01977828.1A patent/EP1323179B1/en not_active Expired - Lifetime
- 2001-09-26 RU RU2003109437/28A patent/RU2270492C2/ru not_active IP Right Cessation
- 2001-10-04 TW TW090124573A patent/TW587272B/zh not_active IP Right Cessation
-
2002
- 2002-08-21 US US10/225,655 patent/US6823815B2/en not_active Expired - Lifetime
-
2004
- 2004-10-15 US US10/966,232 patent/US7470627B2/en not_active Expired - Fee Related
-
2012
- 2012-06-15 JP JP2012135639A patent/JP2012178614A/ja not_active Withdrawn
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150008819A (ko) * | 2013-07-15 | 2015-01-23 | 램 리써치 코포레이션 | 하이브리드 피처 에칭 및 베벨 에칭 시스템 |
KR102283688B1 (ko) * | 2013-07-15 | 2021-07-30 | 램 리써치 코포레이션 | 하이브리드 피처 에칭 및 베벨 에칭 시스템 |
Also Published As
Publication number | Publication date |
---|---|
US20020190657A1 (en) | 2002-12-19 |
JP2004511096A (ja) | 2004-04-08 |
RU2270492C2 (ru) | 2006-02-20 |
CN1479936A (zh) | 2004-03-03 |
US7470627B2 (en) | 2008-12-30 |
US6492774B1 (en) | 2002-12-10 |
AU2001296916A1 (en) | 2002-04-15 |
US20050051268A1 (en) | 2005-03-10 |
WO2002029848A3 (en) | 2002-10-31 |
US6823815B2 (en) | 2004-11-30 |
JP5100952B2 (ja) | 2012-12-19 |
EP1323179B1 (en) | 2013-11-06 |
EP1323179A2 (en) | 2003-07-02 |
CN1322539C (zh) | 2007-06-20 |
WO2002029848A2 (en) | 2002-04-11 |
JP2012178614A (ja) | 2012-09-13 |
KR20030051698A (ko) | 2003-06-25 |
TW587272B (en) | 2004-05-11 |
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