AU2001296916A1 - Wafer area pressure control for plasma confinement - Google Patents

Wafer area pressure control for plasma confinement

Info

Publication number
AU2001296916A1
AU2001296916A1 AU2001296916A AU9691601A AU2001296916A1 AU 2001296916 A1 AU2001296916 A1 AU 2001296916A1 AU 2001296916 A AU2001296916 A AU 2001296916A AU 9691601 A AU9691601 A AU 9691601A AU 2001296916 A1 AU2001296916 A1 AU 2001296916A1
Authority
AU
Australia
Prior art keywords
pressure control
plasma confinement
wafer area
area pressure
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001296916A
Inventor
David W. Benzing
Albert R. Ellingboe
Han Taejoon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU2001296916A1 publication Critical patent/AU2001296916A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
AU2001296916A 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement Abandoned AU2001296916A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/684,695 2000-10-04
US09/684,695 US6492774B1 (en) 2000-10-04 2000-10-04 Wafer area pressure control for plasma confinement
PCT/US2001/042332 WO2002029848A2 (en) 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement

Publications (1)

Publication Number Publication Date
AU2001296916A1 true AU2001296916A1 (en) 2002-04-15

Family

ID=24749169

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001296916A Abandoned AU2001296916A1 (en) 2000-10-04 2001-09-26 Wafer area pressure control for plasma confinement

Country Status (9)

Country Link
US (3) US6492774B1 (en)
EP (1) EP1323179B1 (en)
JP (2) JP5100952B2 (en)
KR (1) KR100603682B1 (en)
CN (1) CN1322539C (en)
AU (1) AU2001296916A1 (en)
RU (1) RU2270492C2 (en)
TW (1) TW587272B (en)
WO (1) WO2002029848A2 (en)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6492774B1 (en) * 2000-10-04 2002-12-10 Lam Research Corporation Wafer area pressure control for plasma confinement
US6800173B2 (en) * 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US6602381B1 (en) 2001-04-30 2003-08-05 Lam Research Corporation Plasma confinement by use of preferred RF return path
US6926803B2 (en) * 2002-04-17 2005-08-09 Lam Research Corporation Confinement ring support assembly
US6936135B2 (en) * 2002-04-17 2005-08-30 Lam Research Corporation Twist-N-Lock wafer area pressure ring and assembly for reducing particulate contaminant in a plasma processing chamber
TWI229367B (en) 2002-12-26 2005-03-11 Canon Kk Chemical treatment apparatus and chemical treatment method
US7296534B2 (en) * 2003-04-30 2007-11-20 Tokyo Electron Limited Hybrid ball-lock attachment apparatus
US7053994B2 (en) * 2003-10-28 2006-05-30 Lam Research Corporation Method and apparatus for etch endpoint detection
KR100539266B1 (en) * 2004-06-02 2005-12-27 삼성전자주식회사 Plasma processing apparatus having segment confinements
JP5252770B2 (en) * 2004-06-10 2013-07-31 三星電子株式会社 Image sensor package assembly method
KR100790392B1 (en) * 2004-11-12 2008-01-02 삼성전자주식회사 Device for making semiconductor
US7632375B2 (en) * 2004-12-30 2009-12-15 Lam Research Corporation Electrically enhancing the confinement of plasma
US7364623B2 (en) * 2005-01-27 2008-04-29 Lam Research Corporation Confinement ring drive
US7837825B2 (en) * 2005-06-13 2010-11-23 Lam Research Corporation Confined plasma with adjustable electrode area ratio
US20060278339A1 (en) * 2005-06-13 2006-12-14 Lam Research Corporation, A Delaware Corporation Etch rate uniformity using the independent movement of electrode pieces
KR100621778B1 (en) * 2005-06-17 2006-09-11 삼성전자주식회사 Plasma treatment apparatus
CN100362622C (en) * 2005-12-07 2008-01-16 北京北方微电子基地设备工艺研究中心有限责任公司 Lower-extraction type etching device
US7632377B2 (en) 2006-01-24 2009-12-15 United Microelectronics Corp. Dry etching apparatus capable of monitoring motion of WAP ring thereof
US7578258B2 (en) * 2006-03-03 2009-08-25 Lam Research Corporation Methods and apparatus for selective pre-coating of a plasma processing chamber
US7740736B2 (en) * 2006-06-08 2010-06-22 Lam Research Corporation Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
US8034409B2 (en) * 2006-12-20 2011-10-11 Lam Research Corporation Methods, apparatuses, and systems for fabricating three dimensional integrated circuits
US8043430B2 (en) * 2006-12-20 2011-10-25 Lam Research Corporation Methods and apparatuses for controlling gas flow conductance in a capacitively-coupled plasma processing chamber
US7732728B2 (en) 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
US8313610B2 (en) * 2007-09-25 2012-11-20 Lam Research Corporation Temperature control modules for showerhead electrode assemblies for plasma processing apparatuses
US8522715B2 (en) * 2008-01-08 2013-09-03 Lam Research Corporation Methods and apparatus for a wide conductance kit
TWI516175B (en) * 2008-02-08 2016-01-01 蘭姆研究公司 A method to stabilize pressure in a plasma processing chamber, and a program storage medium of same
US20090286397A1 (en) * 2008-05-15 2009-11-19 Lam Research Corporation Selective inductive double patterning
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8627783B2 (en) * 2008-12-19 2014-01-14 Lam Research Corporation Combined wafer area pressure control and plasma confinement assembly
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
US8313612B2 (en) 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
KR101559913B1 (en) * 2009-06-25 2015-10-27 삼성전자주식회사 Plasma dry etching apparatus
US8617347B2 (en) * 2009-08-06 2013-12-31 Applied Materials, Inc. Vacuum processing chambers incorporating a moveable flow equalizer
WO2011026127A2 (en) * 2009-08-31 2011-03-03 Lam Research Corporation A local plasma confinement and pressure control arrangement and methods thereof
US8992722B2 (en) * 2009-09-01 2015-03-31 Lam Research Corporation Direct drive arrangement to control confinement rings positioning and methods thereof
US8501631B2 (en) 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
JP5597463B2 (en) * 2010-07-05 2014-10-01 東京エレクトロン株式会社 Substrate processing apparatus and substrate processing method
US20130059448A1 (en) * 2011-09-07 2013-03-07 Lam Research Corporation Pulsed Plasma Chamber in Dual Chamber Configuration
US9076826B2 (en) * 2010-09-24 2015-07-07 Lam Research Corporation Plasma confinement ring assembly for plasma processing chambers
US9530620B2 (en) 2013-03-15 2016-12-27 Lam Research Corporation Dual control modes
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9295148B2 (en) 2012-12-14 2016-03-22 Lam Research Corporation Computation of statistics for statistical data decimation
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US9502216B2 (en) 2013-01-31 2016-11-22 Lam Research Corporation Using modeling to determine wafer bias associated with a plasma system
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US10325759B2 (en) 2012-02-22 2019-06-18 Lam Research Corporation Multiple control modes
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9390893B2 (en) 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9368329B2 (en) 2012-02-22 2016-06-14 Lam Research Corporation Methods and apparatus for synchronizing RF pulses in a plasma processing system
US9408288B2 (en) 2012-09-14 2016-08-02 Lam Research Corporation Edge ramping
US9043525B2 (en) 2012-12-14 2015-05-26 Lam Research Corporation Optimizing a rate of transfer of data between an RF generator and a host system within a plasma tool
US9155182B2 (en) 2013-01-11 2015-10-06 Lam Research Corporation Tuning a parameter associated with plasma impedance
US9620337B2 (en) 2013-01-31 2017-04-11 Lam Research Corporation Determining a malfunctioning device in a plasma system
US9779196B2 (en) 2013-01-31 2017-10-03 Lam Research Corporation Segmenting a model within a plasma system
US9107284B2 (en) 2013-03-13 2015-08-11 Lam Research Corporation Chamber matching using voltage control mode
US9119283B2 (en) 2013-03-14 2015-08-25 Lam Research Corporation Chamber matching for power control mode
US9564285B2 (en) * 2013-07-15 2017-02-07 Lam Research Corporation Hybrid feature etching and bevel etching systems
US9502221B2 (en) 2013-07-26 2016-11-22 Lam Research Corporation Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US10957561B2 (en) 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
CN105390362B (en) * 2015-10-29 2017-06-23 上海华力微电子有限公司 System and method for changing the O-ring on pressure-control valve
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US20170278679A1 (en) * 2016-03-24 2017-09-28 Lam Research Corporation Method and apparatus for controlling process within wafer uniformity
KR101680850B1 (en) * 2016-06-28 2016-11-29 주식회사 기가레인 Plasma processing apparatus having control of exhaust flow path size
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
CN110767568B (en) * 2018-07-26 2022-05-27 北京北方华创微电子装备有限公司 Pressure regulating assembly, lower electrode device, process chamber and semiconductor processing equipment
CN115513023A (en) * 2021-06-23 2022-12-23 中微半导体设备(上海)股份有限公司 Confinement ring, plasma processing apparatus and exhaust control method thereof

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068784A (en) * 1989-10-03 2000-05-30 Applied Materials, Inc. Process used in an RF coupled plasma reactor
US5246532A (en) 1990-10-26 1993-09-21 Mitsubishi Denki Kabushiki Kaisha Plasma processing apparatus
JP2638443B2 (en) 1993-08-31 1997-08-06 日本電気株式会社 Dry etching method and dry etching apparatus
US5569356A (en) * 1995-05-19 1996-10-29 Lam Research Corporation Electrode clamping assembly and method for assembly and use thereof
US5534751A (en) 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
JPH1012578A (en) * 1996-06-26 1998-01-16 Mitsubishi Electric Corp Method and apparatus for mounting wafer on support base
JP3468446B2 (en) * 1997-05-20 2003-11-17 東京エレクトロン株式会社 Plasma processing equipment
US6008130A (en) * 1997-08-14 1999-12-28 Vlsi Technology, Inc. Polymer adhesive plasma confinement ring
US6019060A (en) * 1998-06-24 2000-02-01 Lam Research Corporation Cam-based arrangement for positioning confinement rings in a plasma processing chamber
US5998932A (en) * 1998-06-26 1999-12-07 Lam Research Corporation Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber
JP2000058512A (en) 1998-08-03 2000-02-25 Matsushita Electric Ind Co Ltd Device and method for plasma treatment
US6178919B1 (en) * 1998-12-28 2001-01-30 Lam Research Corporation Perforated plasma confinement ring in plasma reactors
US6354241B1 (en) * 1999-07-15 2002-03-12 Applied Materials, Inc. Heated electrostatic particle trap for in-situ vacuum line cleaning of a substrated processing
US6350317B1 (en) * 1999-12-30 2002-02-26 Lam Research Corporation Linear drive system for use in a plasma processing system
US6261408B1 (en) * 2000-02-16 2001-07-17 Applied Materials, Inc. Method and apparatus for semiconductor processing chamber pressure control
US6433484B1 (en) * 2000-08-11 2002-08-13 Lam Research Corporation Wafer area pressure control
US6492774B1 (en) * 2000-10-04 2002-12-10 Lam Research Corporation Wafer area pressure control for plasma confinement
US6936135B2 (en) * 2002-04-17 2005-08-30 Lam Research Corporation Twist-N-Lock wafer area pressure ring and assembly for reducing particulate contaminant in a plasma processing chamber

Also Published As

Publication number Publication date
JP5100952B2 (en) 2012-12-19
EP1323179B1 (en) 2013-11-06
US20020190657A1 (en) 2002-12-19
KR100603682B1 (en) 2006-07-20
JP2004511096A (en) 2004-04-08
US20050051268A1 (en) 2005-03-10
WO2002029848A3 (en) 2002-10-31
TW587272B (en) 2004-05-11
CN1479936A (en) 2004-03-03
RU2270492C2 (en) 2006-02-20
EP1323179A2 (en) 2003-07-02
US7470627B2 (en) 2008-12-30
WO2002029848A2 (en) 2002-04-11
KR20030051698A (en) 2003-06-25
US6492774B1 (en) 2002-12-10
JP2012178614A (en) 2012-09-13
CN1322539C (en) 2007-06-20
US6823815B2 (en) 2004-11-30

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