KR100574141B1 - 단결정 실리콘층의 트렌치 에칭 방법 - Google Patents

단결정 실리콘층의 트렌치 에칭 방법 Download PDF

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Publication number
KR100574141B1
KR100574141B1 KR1020007010473A KR20007010473A KR100574141B1 KR 100574141 B1 KR100574141 B1 KR 100574141B1 KR 1020007010473 A KR1020007010473 A KR 1020007010473A KR 20007010473 A KR20007010473 A KR 20007010473A KR 100574141 B1 KR100574141 B1 KR 100574141B1
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KR
South Korea
Prior art keywords
plasma
etching
source
variable
trench
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KR1020007010473A
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English (en)
Korean (ko)
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KR20010042106A (ko
Inventor
마크에이. 케나드
Original Assignee
램 리서치 코포레이션
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Publication of KR20010042106A publication Critical patent/KR20010042106A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3347—Problems associated with etching bottom of holes or trenches

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020007010473A 1998-03-31 1999-03-30 단결정 실리콘층의 트렌치 에칭 방법 Expired - Lifetime KR100574141B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/052,997 1998-03-31
US9/052,997 1998-03-31
US09/052,997 US5935874A (en) 1998-03-31 1998-03-31 Techniques for forming trenches in a silicon layer of a substrate in a high density plasma processing system

Publications (2)

Publication Number Publication Date
KR20010042106A KR20010042106A (ko) 2001-05-25
KR100574141B1 true KR100574141B1 (ko) 2006-04-25

Family

ID=21981252

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007010473A Expired - Lifetime KR100574141B1 (ko) 1998-03-31 1999-03-30 단결정 실리콘층의 트렌치 에칭 방법

Country Status (8)

Country Link
US (1) US5935874A (https=)
EP (1) EP1070342B1 (https=)
JP (1) JP2002510860A (https=)
KR (1) KR100574141B1 (https=)
AT (1) ATE389238T1 (https=)
DE (1) DE69938342T2 (https=)
TW (1) TW520405B (https=)
WO (1) WO1999050897A1 (https=)

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US6107192A (en) 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
DE19826382C2 (de) * 1998-06-12 2002-02-07 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US6642149B2 (en) * 1998-09-16 2003-11-04 Tokyo Electron Limited Plasma processing method
US7053002B2 (en) * 1998-12-04 2006-05-30 Applied Materials, Inc Plasma preclean with argon, helium, and hydrogen gases
US6355564B1 (en) * 1999-08-26 2002-03-12 Advanced Micro Devices, Inc. Selective back side reactive ion etch
US6389207B1 (en) * 1999-12-13 2002-05-14 Corning Incorporated Dispersion managed fiber
US6500356B2 (en) * 2000-03-27 2002-12-31 Applied Materials, Inc. Selectively etching silicon using fluorine without plasma
US20030010354A1 (en) * 2000-03-27 2003-01-16 Applied Materials, Inc. Fluorine process for cleaning semiconductor process chamber
US6372567B1 (en) 2000-04-20 2002-04-16 Infineon Technologies Ag Control of oxide thickness in vertical transistor structures
US6843258B2 (en) * 2000-12-19 2005-01-18 Applied Materials, Inc. On-site cleaning gas generation for process chamber cleaning
US6653237B2 (en) * 2001-06-27 2003-11-25 Applied Materials, Inc. High resist-selectivity etch for silicon trench etch applications
JP3527901B2 (ja) * 2001-07-24 2004-05-17 株式会社日立製作所 プラズマエッチング方法
US20030121796A1 (en) * 2001-11-26 2003-07-03 Siegele Stephen H Generation and distribution of molecular fluorine within a fabrication facility
US20040037768A1 (en) * 2001-11-26 2004-02-26 Robert Jackson Method and system for on-site generation and distribution of a process gas
US20090001524A1 (en) * 2001-11-26 2009-01-01 Siegele Stephen H Generation and distribution of a fluorine gas
US20040151656A1 (en) * 2001-11-26 2004-08-05 Siegele Stephen H. Modular molecular halogen gas generation system
US6905968B2 (en) * 2001-12-12 2005-06-14 Applied Materials, Inc. Process for selectively etching dielectric layers
KR100430583B1 (ko) * 2001-12-20 2004-05-10 동부전자 주식회사 플라즈마 에칭 장비를 이용한 반도체 소자의 프로파일조절 방법
US6921724B2 (en) * 2002-04-02 2005-07-26 Lam Research Corporation Variable temperature processes for tunable electrostatic chuck
US6706586B1 (en) 2002-10-23 2004-03-16 International Business Machines Corporation Method of trench sidewall enhancement
US6797610B1 (en) 2002-12-11 2004-09-28 International Business Machines Corporation Sublithographic patterning using microtrenching
DE10331526A1 (de) * 2003-07-11 2005-02-03 Infineon Technologies Ag Verfahren zum anisotropen Ätzen einer Ausnehmung in ein Siliziumsubstrat und Verwendung einer Plasmaätzanlage
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
US20060054183A1 (en) * 2004-08-27 2006-03-16 Thomas Nowak Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber
US20060090773A1 (en) * 2004-11-04 2006-05-04 Applied Materials, Inc. Sulfur hexafluoride remote plasma source clean
JP5154013B2 (ja) * 2005-10-12 2013-02-27 パナソニック株式会社 ドライエッチング方法
KR100814901B1 (ko) * 2007-05-22 2008-03-19 한국전자통신연구원 건식 식각 공정을 이용한 산화물 박막 트랜지스터 소자의제조방법
US7704849B2 (en) * 2007-12-03 2010-04-27 Micron Technology, Inc. Methods of forming trench isolation in silicon of a semiconductor substrate by plasma
US20130288485A1 (en) * 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
JP6859088B2 (ja) * 2016-12-14 2021-04-14 エイブリック株式会社 半導体装置の製造方法

Citations (1)

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EP0489407A2 (en) * 1990-12-03 1992-06-10 Applied Materials, Inc. Plasma reactor using UHF/VHF resonant antenna source, and processes

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US4895810A (en) * 1986-03-21 1990-01-23 Advanced Power Technology, Inc. Iopographic pattern delineated power mosfet with profile tailored recessed source
US5182234A (en) * 1986-03-21 1993-01-26 Advanced Power Technology, Inc. Profile tailored trench etch using a SF6 -O2 etching composition wherein both isotropic and anisotropic etching is achieved by varying the amount of oxygen
US4726879A (en) * 1986-09-08 1988-02-23 International Business Machines Corporation RIE process for etching silicon isolation trenches and polycides with vertical surfaces
FR2616030A1 (fr) * 1987-06-01 1988-12-02 Commissariat Energie Atomique Procede de gravure ou de depot par plasma et dispositif pour la mise en oeuvre du procede
JPH02138472A (ja) * 1988-11-16 1990-05-28 Canon Inc 推積膜形成装置の洗浄方法
US5277752A (en) * 1992-10-19 1994-01-11 At&T Bell Laboratories Method for controlling plasma processes
US5783492A (en) * 1994-03-04 1998-07-21 Tokyo Electron Limited Plasma processing method, plasma processing apparatus, and plasma generating apparatus
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US5605603A (en) * 1995-03-29 1997-02-25 International Business Machines Corporation Deep trench process

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
EP0489407A2 (en) * 1990-12-03 1992-06-10 Applied Materials, Inc. Plasma reactor using UHF/VHF resonant antenna source, and processes

Also Published As

Publication number Publication date
EP1070342A1 (en) 2001-01-24
DE69938342T2 (de) 2009-03-12
EP1070342B1 (en) 2008-03-12
US5935874A (en) 1999-08-10
DE69938342D1 (de) 2008-04-24
ATE389238T1 (de) 2008-03-15
TW520405B (en) 2003-02-11
KR20010042106A (ko) 2001-05-25
WO1999050897A1 (en) 1999-10-07
JP2002510860A (ja) 2002-04-09

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