ATE389238T1 - Verfahren zur herstellung von gräben in einer siliziumschicht eines substrats in einem plasmasystem hoher plasmadichte - Google Patents

Verfahren zur herstellung von gräben in einer siliziumschicht eines substrats in einem plasmasystem hoher plasmadichte

Info

Publication number
ATE389238T1
ATE389238T1 AT99916217T AT99916217T ATE389238T1 AT E389238 T1 ATE389238 T1 AT E389238T1 AT 99916217 T AT99916217 T AT 99916217T AT 99916217 T AT99916217 T AT 99916217T AT E389238 T1 ATE389238 T1 AT E389238T1
Authority
AT
Austria
Prior art keywords
plasma
variable
silicon layer
substrate
source
Prior art date
Application number
AT99916217T
Other languages
English (en)
Inventor
Mark Kennard
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE389238T1 publication Critical patent/ATE389238T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3347—Problems associated with etching bottom of holes or trenches

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT99916217T 1998-03-31 1999-03-30 Verfahren zur herstellung von gräben in einer siliziumschicht eines substrats in einem plasmasystem hoher plasmadichte ATE389238T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/052,997 US5935874A (en) 1998-03-31 1998-03-31 Techniques for forming trenches in a silicon layer of a substrate in a high density plasma processing system

Publications (1)

Publication Number Publication Date
ATE389238T1 true ATE389238T1 (de) 2008-03-15

Family

ID=21981252

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99916217T ATE389238T1 (de) 1998-03-31 1999-03-30 Verfahren zur herstellung von gräben in einer siliziumschicht eines substrats in einem plasmasystem hoher plasmadichte

Country Status (8)

Country Link
US (1) US5935874A (de)
EP (1) EP1070342B1 (de)
JP (1) JP2002510860A (de)
KR (1) KR100574141B1 (de)
AT (1) ATE389238T1 (de)
DE (1) DE69938342T2 (de)
TW (1) TW520405B (de)
WO (1) WO1999050897A1 (de)

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US6107192A (en) 1997-12-30 2000-08-22 Applied Materials, Inc. Reactive preclean prior to metallization for sub-quarter micron application
DE19826382C2 (de) * 1998-06-12 2002-02-07 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US6642149B2 (en) * 1998-09-16 2003-11-04 Tokyo Electron Limited Plasma processing method
US7053002B2 (en) * 1998-12-04 2006-05-30 Applied Materials, Inc Plasma preclean with argon, helium, and hydrogen gases
US6355564B1 (en) * 1999-08-26 2002-03-12 Advanced Micro Devices, Inc. Selective back side reactive ion etch
US6389207B1 (en) * 1999-12-13 2002-05-14 Corning Incorporated Dispersion managed fiber
US6500356B2 (en) * 2000-03-27 2002-12-31 Applied Materials, Inc. Selectively etching silicon using fluorine without plasma
US20030010354A1 (en) * 2000-03-27 2003-01-16 Applied Materials, Inc. Fluorine process for cleaning semiconductor process chamber
US6372567B1 (en) 2000-04-20 2002-04-16 Infineon Technologies Ag Control of oxide thickness in vertical transistor structures
US6843258B2 (en) * 2000-12-19 2005-01-18 Applied Materials, Inc. On-site cleaning gas generation for process chamber cleaning
US6653237B2 (en) * 2001-06-27 2003-11-25 Applied Materials, Inc. High resist-selectivity etch for silicon trench etch applications
JP3527901B2 (ja) * 2001-07-24 2004-05-17 株式会社日立製作所 プラズマエッチング方法
US20040151656A1 (en) * 2001-11-26 2004-08-05 Siegele Stephen H. Modular molecular halogen gas generation system
US20030121796A1 (en) * 2001-11-26 2003-07-03 Siegele Stephen H Generation and distribution of molecular fluorine within a fabrication facility
US20090001524A1 (en) * 2001-11-26 2009-01-01 Siegele Stephen H Generation and distribution of a fluorine gas
US20040037768A1 (en) * 2001-11-26 2004-02-26 Robert Jackson Method and system for on-site generation and distribution of a process gas
US6905968B2 (en) * 2001-12-12 2005-06-14 Applied Materials, Inc. Process for selectively etching dielectric layers
KR100430583B1 (ko) * 2001-12-20 2004-05-10 동부전자 주식회사 플라즈마 에칭 장비를 이용한 반도체 소자의 프로파일조절 방법
US6921724B2 (en) * 2002-04-02 2005-07-26 Lam Research Corporation Variable temperature processes for tunable electrostatic chuck
US6706586B1 (en) 2002-10-23 2004-03-16 International Business Machines Corporation Method of trench sidewall enhancement
US6797610B1 (en) 2002-12-11 2004-09-28 International Business Machines Corporation Sublithographic patterning using microtrenching
DE10331526A1 (de) * 2003-07-11 2005-02-03 Infineon Technologies Ag Verfahren zum anisotropen Ätzen einer Ausnehmung in ein Siliziumsubstrat und Verwendung einer Plasmaätzanlage
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
US20060054183A1 (en) * 2004-08-27 2006-03-16 Thomas Nowak Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber
US20060090773A1 (en) * 2004-11-04 2006-05-04 Applied Materials, Inc. Sulfur hexafluoride remote plasma source clean
JP5154013B2 (ja) * 2005-10-12 2013-02-27 パナソニック株式会社 ドライエッチング方法
KR100814901B1 (ko) * 2007-05-22 2008-03-19 한국전자통신연구원 건식 식각 공정을 이용한 산화물 박막 트랜지스터 소자의제조방법
US7704849B2 (en) * 2007-12-03 2010-04-27 Micron Technology, Inc. Methods of forming trench isolation in silicon of a semiconductor substrate by plasma
US20130288485A1 (en) * 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
JP6859088B2 (ja) * 2016-12-14 2021-04-14 エイブリック株式会社 半導体装置の製造方法

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Publication number Priority date Publication date Assignee Title
US4895810A (en) * 1986-03-21 1990-01-23 Advanced Power Technology, Inc. Iopographic pattern delineated power mosfet with profile tailored recessed source
US5182234A (en) * 1986-03-21 1993-01-26 Advanced Power Technology, Inc. Profile tailored trench etch using a SF6 -O2 etching composition wherein both isotropic and anisotropic etching is achieved by varying the amount of oxygen
US4726879A (en) * 1986-09-08 1988-02-23 International Business Machines Corporation RIE process for etching silicon isolation trenches and polycides with vertical surfaces
FR2616030A1 (fr) * 1987-06-01 1988-12-02 Commissariat Energie Atomique Procede de gravure ou de depot par plasma et dispositif pour la mise en oeuvre du procede
JPH02138472A (ja) * 1988-11-16 1990-05-28 Canon Inc 推積膜形成装置の洗浄方法
JP2519364B2 (ja) * 1990-12-03 1996-07-31 アプライド マテリアルズ インコーポレイテッド Ｕｈｆ／ｖｈｆ共振アンテナ供給源を用いたプラズマリアクタ
US5277752A (en) * 1992-10-19 1994-01-11 At&T Bell Laboratories Method for controlling plasma processes
US5783492A (en) * 1994-03-04 1998-07-21 Tokyo Electron Limited Plasma processing method, plasma processing apparatus, and plasma generating apparatus
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US5605603A (en) * 1995-03-29 1997-02-25 International Business Machines Corporation Deep trench process

Also Published As

Publication number Publication date
EP1070342B1 (de) 2008-03-12
TW520405B (en) 2003-02-11
WO1999050897A1 (en) 1999-10-07
KR100574141B1 (ko) 2006-04-25
EP1070342A1 (de) 2001-01-24
DE69938342D1 (de) 2008-04-24
US5935874A (en) 1999-08-10
DE69938342T2 (de) 2009-03-12
KR20010042106A (ko) 2001-05-25
JP2002510860A (ja) 2002-04-09

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Legal Events

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