KR100554016B1 - 기판 프로세싱 시스템을 위한 다기능 챔버 - Google Patents

기판 프로세싱 시스템을 위한 다기능 챔버 Download PDF

Info

Publication number
KR100554016B1
KR100554016B1 KR1020007013026A KR20007013026A KR100554016B1 KR 100554016 B1 KR100554016 B1 KR 100554016B1 KR 1020007013026 A KR1020007013026 A KR 1020007013026A KR 20007013026 A KR20007013026 A KR 20007013026A KR 100554016 B1 KR100554016 B1 KR 100554016B1
Authority
KR
South Korea
Prior art keywords
chamber
substrate
platen
cooling
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020007013026A
Other languages
English (en)
Korean (ko)
Other versions
KR20010025061A (ko
Inventor
존 엠. 화이트
웬델 티. 블로니건
마이클 더블유. 리처
Original Assignee
에이케이티 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이케이티 가부시키가이샤 filed Critical 에이케이티 가부시키가이샤
Publication of KR20010025061A publication Critical patent/KR20010025061A/ko
Application granted granted Critical
Publication of KR100554016B1 publication Critical patent/KR100554016B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0478—Apparatus for manufacture or treatment the substrates being processed being not semiconductor wafers, e.g. leadframes or chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Furnace Charging Or Discharging (AREA)
KR1020007013026A 1998-05-20 1999-05-20 기판 프로세싱 시스템을 위한 다기능 챔버 Expired - Fee Related KR100554016B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/082,375 1998-05-20
US09/082,375 US6086362A (en) 1998-05-20 1998-05-20 Multi-function chamber for a substrate processing system

Publications (2)

Publication Number Publication Date
KR20010025061A KR20010025061A (ko) 2001-03-26
KR100554016B1 true KR100554016B1 (ko) 2006-02-22

Family

ID=22170808

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007013026A Expired - Fee Related KR100554016B1 (ko) 1998-05-20 1999-05-20 기판 프로세싱 시스템을 위한 다기능 챔버

Country Status (6)

Country Link
US (3) US6086362A (https=)
EP (1) EP1099239A2 (https=)
JP (2) JP2002516484A (https=)
KR (1) KR100554016B1 (https=)
TW (1) TW495491B (https=)
WO (1) WO1999060609A2 (https=)

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6517303B1 (en) 1998-05-20 2003-02-11 Applied Komatsu Technology, Inc. Substrate transfer shuttle
US6079693A (en) 1998-05-20 2000-06-27 Applied Komatsu Technology, Inc. Isolation valves
US6416318B1 (en) * 1999-06-16 2002-07-09 Silicon Valley Group, Inc. Process chamber assembly with reflective hot plate and pivoting lid
US6450805B1 (en) * 1999-08-11 2002-09-17 Tokyo Electron Limited Hot plate cooling method and heat processing apparatus
EP1077274A1 (en) * 1999-08-17 2001-02-21 Applied Materials, Inc. Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes
US6303906B1 (en) 1999-11-30 2001-10-16 Wafermasters, Inc. Resistively heated single wafer furnace
US6949143B1 (en) 1999-12-15 2005-09-27 Applied Materials, Inc. Dual substrate loadlock process equipment
US6547922B2 (en) * 2000-01-31 2003-04-15 Canon Kabushiki Kaisha Vacuum-processing apparatus using a movable cooling plate during processing
JP2001319885A (ja) * 2000-03-02 2001-11-16 Hitachi Kokusai Electric Inc 基板処理装置及び半導体製造方法
KR20030032034A (ko) 2000-09-15 2003-04-23 어플라이드 머티어리얼스, 인코포레이티드 처리 장비용 두 개의 이중 슬롯 로드록
US6483081B1 (en) * 2000-11-27 2002-11-19 Novellus Systems, Inc. In-line cure furnace and method for using the same
FR2824663B1 (fr) * 2001-05-14 2004-10-01 Semco Sa Procede et dispositif de dopage, diffusion et oxydation pyrolithique de plaquettes de silicium a pression reduite
US6902623B2 (en) * 2001-06-07 2005-06-07 Veeco Instruments Inc. Reactor having a movable shutter
US6750155B2 (en) * 2001-08-08 2004-06-15 Lam Research Corporation Methods to minimize moisture condensation over a substrate in a rapid cycle chamber
US6672864B2 (en) * 2001-08-31 2004-01-06 Applied Materials, Inc. Method and apparatus for processing substrates in a system having high and low pressure areas
US7316966B2 (en) * 2001-09-21 2008-01-08 Applied Materials, Inc. Method for transferring substrates in a load lock chamber
US7037063B2 (en) * 2002-04-18 2006-05-02 Display Manufacturing Services Co., Ltd. Substrate floating apparatus and method of manufacturing liquid crystal display apparatus using the same
US7129694B2 (en) * 2002-05-23 2006-10-31 Applied Materials, Inc. Large substrate test system
DE10227332A1 (de) * 2002-06-19 2004-01-15 Akt Electron Beam Technology Gmbh Ansteuervorrichtung mit verbesserten Testeneigenschaften
US6774012B1 (en) * 2002-11-08 2004-08-10 Cypress Semiconductor Corp. Furnace system and method for selectively oxidizing a sidewall surface of a gate conductor by oxidizing a silicon sidewall in lieu of a refractory metal sidewall
WO2005029566A1 (ja) * 2003-09-19 2005-03-31 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
US7207766B2 (en) * 2003-10-20 2007-04-24 Applied Materials, Inc. Load lock chamber for large area substrate processing system
US7355418B2 (en) * 2004-02-12 2008-04-08 Applied Materials, Inc. Configurable prober for TFT LCD array test
US20060038554A1 (en) * 2004-02-12 2006-02-23 Applied Materials, Inc. Electron beam test system stage
US6833717B1 (en) * 2004-02-12 2004-12-21 Applied Materials, Inc. Electron beam test system with integrated substrate transfer module
US7319335B2 (en) * 2004-02-12 2008-01-15 Applied Materials, Inc. Configurable prober for TFT LCD array testing
TWI286529B (en) * 2004-05-06 2007-09-11 Hannstar Display Corp Method and structure for reception and delivery
US8206075B2 (en) * 2004-06-02 2012-06-26 Applied Materials, Inc. Methods and apparatus for sealing a chamber
US8648977B2 (en) 2004-06-02 2014-02-11 Applied Materials, Inc. Methods and apparatus for providing a floating seal having an isolated sealing surface for chamber doors
US7497414B2 (en) * 2004-06-14 2009-03-03 Applied Materials, Inc. Curved slit valve door with flexible coupling
US20060045667A1 (en) * 2004-07-14 2006-03-02 Savas Stephen E Substrate handling system and process for manufacturing large substrates
US7075323B2 (en) * 2004-07-29 2006-07-11 Applied Materials, Inc. Large substrate test system
US7317325B2 (en) * 2004-12-09 2008-01-08 Applied Materials, Inc. Line short localization in LCD pixel arrays
JP4860167B2 (ja) * 2005-03-30 2012-01-25 東京エレクトロン株式会社 ロードロック装置，処理システム及び処理方法
JP4619854B2 (ja) * 2005-04-18 2011-01-26 東京エレクトロン株式会社 ロードロック装置及び処理方法
US7535238B2 (en) * 2005-04-29 2009-05-19 Applied Materials, Inc. In-line electron beam test system
JP4586626B2 (ja) * 2005-05-17 2010-11-24 ソニー株式会社 エッチング方法および半導体装置の製造方法
US20060273815A1 (en) * 2005-06-06 2006-12-07 Applied Materials, Inc. Substrate support with integrated prober drive
US20070006936A1 (en) * 2005-07-07 2007-01-11 Applied Materials, Inc. Load lock chamber with substrate temperature regulation
TWI295816B (en) 2005-07-19 2008-04-11 Applied Materials Inc Hybrid pvd-cvd system
US7845891B2 (en) * 2006-01-13 2010-12-07 Applied Materials, Inc. Decoupled chamber body
CN102353890B (zh) * 2006-03-14 2014-09-24 应用材料公司 减小多个柱状电子束测试系统中的串扰的方法
US8057633B2 (en) * 2006-03-28 2011-11-15 Tokyo Electron Limited Post-etch treatment system for removing residue on a substrate
US20070254494A1 (en) * 2006-04-27 2007-11-01 Applied Materials, Inc. Faceplate with rapid temperature change
US7602199B2 (en) * 2006-05-31 2009-10-13 Applied Materials, Inc. Mini-prober for TFT-LCD testing
US7786742B2 (en) * 2006-05-31 2010-08-31 Applied Materials, Inc. Prober for electronic device testing on large area substrates
US7665951B2 (en) * 2006-06-02 2010-02-23 Applied Materials, Inc. Multiple slot load lock chamber and method of operation
US7845618B2 (en) 2006-06-28 2010-12-07 Applied Materials, Inc. Valve door with ball coupling
US8124907B2 (en) * 2006-08-04 2012-02-28 Applied Materials, Inc. Load lock chamber with decoupled slit valve door seal compartment
US8252640B1 (en) 2006-11-02 2012-08-28 Kapre Ravindra M Polycrystalline silicon activation RTA
US20080223294A1 (en) * 2007-03-14 2008-09-18 Applied Materials, Inc. Flooding Chamber For Coating Installations
US7563725B2 (en) * 2007-04-05 2009-07-21 Solyndra, Inc. Method of depositing materials on a non-planar surface
US20080251019A1 (en) * 2007-04-12 2008-10-16 Sriram Krishnaswami System and method for transferring a substrate into and out of a reduced volume chamber accommodating multiple substrates
US8752449B2 (en) 2007-05-08 2014-06-17 Brooks Automation, Inc. Substrate transport apparatus with multiple movable arms utilizing a mechanical switch mechanism
US7855156B2 (en) * 2007-05-09 2010-12-21 Solyndra, Inc. Method of and apparatus for inline deposition of materials on a non-planar surface
US20080279672A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods of stack to array work-piece transfer for photovoltaic factory
US7496423B2 (en) * 2007-05-11 2009-02-24 Applied Materials, Inc. Method of achieving high productivity fault tolerant photovoltaic factory with batch array transfer robots
US20080279658A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods within equipment work-piece transfer for photovoltaic factory
US20080292433A1 (en) * 2007-05-11 2008-11-27 Bachrach Robert Z Batch equipment robots and methods of array to array work-piece transfer for photovoltaic factory
US10541157B2 (en) * 2007-05-18 2020-01-21 Brooks Automation, Inc. Load lock fast pump vent
KR101659931B1 (ko) 2007-06-27 2016-09-26 브룩스 오토메이션 인코퍼레이티드 다차원 위치 센서
US8823294B2 (en) * 2007-06-27 2014-09-02 Brooks Automation, Inc. Commutation of an electromagnetic propulsion and guidance system
JP5416104B2 (ja) * 2007-06-27 2014-02-12 ブルックス オートメーション インコーポレイテッド セルフベアリングモータ用位置フィードバック
US9752615B2 (en) 2007-06-27 2017-09-05 Brooks Automation, Inc. Reduced-complexity self-bearing brushless DC motor
US8283813B2 (en) 2007-06-27 2012-10-09 Brooks Automation, Inc. Robot drive with magnetic spindle bearings
CN101855811B (zh) * 2007-06-27 2013-11-20 布鲁克斯自动化公司 具有提升能力和减少的齿槽特性的电机定子
US20090011573A1 (en) * 2007-07-02 2009-01-08 Solyndra, Inc. Carrier used for deposition of materials on a non-planar surface
WO2009012396A2 (en) 2007-07-17 2009-01-22 Brooks Automation, Inc. Substrate processing apparatus with motors integral to chamber walls
US8443558B2 (en) * 2007-10-15 2013-05-21 Solyndra Llc Support system for solar energy generator panels
KR20110097908A (ko) * 2008-11-28 2011-08-31 볼커 프로브스트 반도체 층 또는 원소 셀레늄 및/또는 황으로 처리된 코팅 기판, 특히 평면 기판의 제조 방법
TWI417984B (zh) * 2009-12-10 2013-12-01 沃博提克Ｌｔ太陽公司 自動排序之多方向性直線型處理裝置
US8834155B2 (en) * 2011-03-29 2014-09-16 Institute of Microelectronics, Chinese Academy of Sciences Wafer transfer apparatus and wafer transfer method
US8459276B2 (en) 2011-05-24 2013-06-11 Orbotech LT Solar, LLC. Broken wafer recovery system
CN102618845B (zh) * 2012-04-01 2014-06-11 中微半导体设备(上海)有限公司 具有遮挡板装置的反应器
JP5765405B2 (ja) * 2013-11-19 2015-08-19 株式会社ニコン 基板接合装置及び基板接合方法
WO2015112969A1 (en) 2014-01-27 2015-07-30 Veeco Instruments. Inc. Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems
US10054363B2 (en) * 2014-08-15 2018-08-21 WD Media, LLC Method and apparatus for cryogenic dynamic cooling
US10892148B2 (en) 2017-05-31 2021-01-12 Seagate Technology Llc Inflatable seal for media cooling
US10770097B2 (en) 2017-12-22 2020-09-08 Seagate Technology Llc Element heater with back plane reflectors
US10854235B2 (en) 2017-12-22 2020-12-01 Seagate Technology Llc Electrode including a continuously smooth channel
US10784310B2 (en) * 2018-11-08 2020-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices
KR102773587B1 (ko) * 2019-06-18 2025-02-27 주식회사 엘지에너지솔루션 전지셀 열전도도 측정장치 및 이를 이용한 전지셀 열전도도 측정 방법
KR20240126051A (ko) * 2021-12-30 2024-08-20 텔리플렉스 메디컬 인코포레이티드 열가소성 중합체 조성물 중의 배합 활성 약제학적 제제 및 제조 방법

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2114470B2 (de) * 1971-03-25 1975-02-13 Flachglas Ag Delog-Detag, 4650 Gelsenkirchen Vorrichtung zum kontinuierlichen, einseitigen Beschichten von Platten, wie Glasscheiben, Keramik- oder Kunststoffplatten u. dgl. mittels Kathodenzerstäubung
US4047624A (en) * 1975-10-21 1977-09-13 Airco, Inc. Workpiece handling system for vacuum processing
US5187115A (en) * 1977-12-05 1993-02-16 Plasma Physics Corp. Method of forming semiconducting materials and barriers using a dual enclosure apparatus
US5259881A (en) * 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
US4709655A (en) * 1985-12-03 1987-12-01 Varian Associates, Inc. Chemical vapor deposition apparatus
US4775281A (en) * 1986-12-02 1988-10-04 Teradyne, Inc. Apparatus and method for loading and unloading wafers
JPS63141342A (ja) * 1986-12-04 1988-06-13 Ushio Inc 半導体ウエハ処理方法及びその装置
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US4913929A (en) * 1987-04-21 1990-04-03 The Board Of Trustees Of The Leland Stanford Junior University Thermal/microwave remote plasma multiprocessing reactor and method of use
US4846102A (en) * 1987-06-24 1989-07-11 Epsilon Technology, Inc. Reaction chambers for CVD systems
JPH0333058Y2 (https=) * 1987-06-26 1991-07-12
JPS6411320A (en) * 1987-07-06 1989-01-13 Toshiba Corp Photo-cvd device
US5001327A (en) * 1987-09-11 1991-03-19 Hitachi, Ltd. Apparatus and method for performing heat treatment on semiconductor wafers
FR2621930B1 (fr) * 1987-10-15 1990-02-02 Solems Sa Procede et appareil pour la production par plasma de couches minces a usage electronique et/ou optoelectronique
US5259883A (en) * 1988-02-16 1993-11-09 Kabushiki Kaisha Toshiba Method of thermally processing semiconductor wafers and an apparatus therefor
US4857689A (en) * 1988-03-23 1989-08-15 High Temperature Engineering Corporation Rapid thermal furnace for semiconductor processing
DE3941110A1 (de) * 1988-12-19 1990-06-28 Rif O Z Mikroelektroniki Vakuumeinrichtung zum aufdampfen von schichten
US5059770A (en) * 1989-09-19 1991-10-22 Watkins-Johnson Company Multi-zone planar heater assembly and method of operation
DE69032945T2 (de) * 1989-10-20 1999-09-16 Applied Materials, Inc. Robotereinrichtung
US5447409A (en) * 1989-10-20 1995-09-05 Applied Materials, Inc. Robot assembly
US5227708A (en) * 1989-10-20 1993-07-13 Applied Materials, Inc. Two-axis magnetically coupled robot
JP2600399B2 (ja) * 1989-10-23 1997-04-16 富士電機株式会社 半導体ウエーハ処理装置
JP2767144B2 (ja) * 1989-10-31 1998-06-18 東京エレクトロン株式会社 処理装置
US5252807A (en) * 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
US5060354A (en) * 1990-07-02 1991-10-29 George Chizinsky Heated plate rapid thermal processor
WO1992017621A1 (en) * 1991-04-04 1992-10-15 Conner Peripherals, Inc. Apparatus and method for high throughput sputtering
JPH0533128A (ja) * 1991-07-31 1993-02-09 Nec Corp スパツタ装置
JP2598353B2 (ja) * 1991-12-04 1997-04-09 アネルバ株式会社 基板処理装置、基板搬送装置及び基板交換方法
JPH05291145A (ja) * 1992-04-07 1993-11-05 Fuji Electric Co Ltd 気相成長装置
JP2888026B2 (ja) * 1992-04-30 1999-05-10 松下電器産業株式会社 プラズマｃｖｄ装置
US5516732A (en) * 1992-12-04 1996-05-14 Sony Corporation Wafer processing machine vacuum front end method and apparatus
DE69304038T2 (de) * 1993-01-28 1996-12-19 Applied Materials Inc Vorrichtung für ein Vakuumverfahren mit verbessertem Durchsatz
US5352294A (en) * 1993-01-28 1994-10-04 White John M Alignment of a shadow frame and large flat substrates on a support
EP0608633B1 (en) * 1993-01-28 1999-03-03 Applied Materials, Inc. Method for multilayer CVD processing in a single chamber
US5607009A (en) * 1993-01-28 1997-03-04 Applied Materials, Inc. Method of heating and cooling large area substrates and apparatus therefor
KR100261532B1 (ko) * 1993-03-14 2000-07-15 야마시타 히데나리 피처리체 반송장치를 가지는 멀티챔버 시스템
JPH0718438A (ja) * 1993-06-17 1995-01-20 Anelva Corp 静電チャック装置
JP3165938B2 (ja) * 1993-06-24 2001-05-14 東京エレクトロン株式会社 ガス処理装置
US5588827A (en) * 1993-12-17 1996-12-31 Brooks Automation Inc. Passive gas substrate thermal conditioning apparatus and method
JP3136345B2 (ja) 1994-08-25 2001-02-19 富士電子工業株式会社 高周波加熱装置
JP3288200B2 (ja) * 1995-06-09 2002-06-04 東京エレクトロン株式会社 真空処理装置
JPH0936198A (ja) * 1995-07-19 1997-02-07 Hitachi Ltd 真空処理装置およびそれを用いた半導体製造ライン
KR100238998B1 (ko) * 1995-07-26 2000-01-15 우치가사키 기이치로 가열로
US5837555A (en) * 1996-04-12 1998-11-17 Ast Electronik Apparatus and method for rapid thermal processing
JP3373394B2 (ja) * 1996-06-21 2003-02-04 株式会社日立国際電気 基板処理装置および基板処理方法
US5848889A (en) * 1996-07-24 1998-12-15 Applied Materials Inc. Semiconductor wafer support with graded thermal mass
US5891251A (en) * 1996-08-07 1999-04-06 Macleish; Joseph H. CVD reactor having heated process chamber within isolation chamber
US6602348B1 (en) * 1996-09-17 2003-08-05 Applied Materials, Inc. Substrate cooldown chamber
US6280183B1 (en) * 1998-04-01 2001-08-28 Applied Materials, Inc. Substrate support for a thermal processing chamber
US6188044B1 (en) * 1998-04-27 2001-02-13 Cvc Products, Inc. High-performance energy transfer system and method for thermal processing applications

Also Published As

Publication number Publication date
WO1999060609A3 (en) 2001-03-15
US6086362A (en) 2000-07-11
TW495491B (en) 2002-07-21
WO1999060609A2 (en) 1999-11-25
EP1099239A2 (en) 2001-05-16
US6435868B2 (en) 2002-08-20
JP2002516484A (ja) 2002-06-04
US20010000747A1 (en) 2001-05-03
JP2009076919A (ja) 2009-04-09
US6193507B1 (en) 2001-02-27
KR20010025061A (ko) 2001-03-26

Similar Documents

Publication Publication Date Title
KR100554016B1 (ko) 기판 프로세싱 시스템을 위한 다기능 챔버
US8196619B2 (en) Load lock apparatus, processing system and substrate processing method
KR100656813B1 (ko) 기판 가공 시스템에서의 기체 흐름 제어
KR100809139B1 (ko) 이중기판 로드록 프로세스 장비
US8183502B2 (en) Mounting table structure and heat treatment apparatus
JP4860167B2 (ja) ロードロック装置，処理システム及び処理方法
US6746198B2 (en) Substrate transfer shuttle
US7311784B2 (en) Plasma processing device
KR100415475B1 (ko) 기판 상에 박막을 성장시키는 장치
JPH11204442A (ja) 枚葉式の熱処理装置
US20120325145A1 (en) Batch type processing apparatus
US20120000612A1 (en) Substrate stage, substrate processing apparatus and substrate processing system
KR20010086378A (ko) 반도체 기판 냉각 방법 및 장치
KR20110112074A (ko) 기판 처리 장치 및 방법
US11725272B2 (en) Method, system and apparatus for cooling a substrate
TWI413163B (zh) Vacuum processing device and vacuum treatment method
US11107698B2 (en) Substrate treating method
JPH11204443A (ja) 枚葉式の熱処理装置
JP4625783B2 (ja) 基板ステージ及び基板処理装置
TW202329198A (zh) 將腔室空間隔離成具有內部晶圓移送能力的處理空間之方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20090114

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20100215

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20100215

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000