KR100553112B1 - 반사형액정디스플레이패널및이것을이용한장치 - Google Patents

반사형액정디스플레이패널및이것을이용한장치 Download PDF

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Publication number
KR100553112B1
KR100553112B1 KR1019980013390A KR19980013390A KR100553112B1 KR 100553112 B1 KR100553112 B1 KR 100553112B1 KR 1019980013390 A KR1019980013390 A KR 1019980013390A KR 19980013390 A KR19980013390 A KR 19980013390A KR 100553112 B1 KR100553112 B1 KR 100553112B1
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KR
South Korea
Prior art keywords
electrode
interlayer insulating
insulating film
drain region
source region
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019980013390A
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English (en)
Korean (ko)
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KR19980081413A (ko
Inventor
순페이 야마자키
히사시 오타니
준 고야마
사토시 데라모토
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR19980081413A publication Critical patent/KR19980081413A/ko
Application granted granted Critical
Publication of KR100553112B1 publication Critical patent/KR100553112B1/ko
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/01—Head-up displays
    • G02B27/017—Head mounted
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/01—Head-up displays
    • G02B27/0101—Head-up displays characterised by optical features
    • G02B2027/0138—Head-up displays characterised by optical features comprising image capture systems, e.g. camera
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/02—Function characteristic reflective
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
KR1019980013390A 1997-04-15 1998-04-15 반사형액정디스플레이패널및이것을이용한장치 Expired - Fee Related KR100553112B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP97-113549 1997-04-15
JP11354997A JP3856901B2 (ja) 1997-04-15 1997-04-15 表示装置

Publications (2)

Publication Number Publication Date
KR19980081413A KR19980081413A (ko) 1998-11-25
KR100553112B1 true KR100553112B1 (ko) 2006-07-06

Family

ID=14615131

Family Applications (1)

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KR1019980013390A Expired - Fee Related KR100553112B1 (ko) 1997-04-15 1998-04-15 반사형액정디스플레이패널및이것을이용한장치

Country Status (3)

Country Link
US (6) US6400426B1 (https=)
JP (1) JP3856901B2 (https=)
KR (1) KR100553112B1 (https=)

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JP2002244585A (ja) * 2001-02-02 2002-08-30 Koninkl Philips Electronics Nv 画像表示装置
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JP4634673B2 (ja) * 2001-09-26 2011-02-16 シャープ株式会社 液晶表示装置及びその製造方法
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JP4073239B2 (ja) * 2002-04-24 2008-04-09 三洋電機株式会社 表示装置
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JP4019868B2 (ja) * 2002-09-11 2007-12-12 セイコーエプソン株式会社 電気光学装置及び電子機器
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CN100370491C (zh) * 2002-12-10 2008-02-20 株式会社半导体能源研究所 发光装置及其制作方法
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US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
KR101540341B1 (ko) * 2008-10-17 2015-07-30 삼성전자주식회사 패널 구조체, 패널 구조체를 포함하는 표시장치 및 이들의 제조방법
JP5515281B2 (ja) * 2008-12-03 2014-06-11 ソニー株式会社 薄膜トランジスタ、表示装置、電子機器および薄膜トランジスタの製造方法
JP4752927B2 (ja) * 2009-02-09 2011-08-17 ソニー株式会社 薄膜トランジスタおよび表示装置
US8586987B2 (en) 2009-09-11 2013-11-19 Sharp Kabushiki Kaisha Active matrix substrate and active matrix display device
CN102668028B (zh) * 2009-11-28 2015-09-02 株式会社半导体能源研究所 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法
JP2012208294A (ja) * 2011-03-29 2012-10-25 Seiko Epson Corp 電気光学装置の製造方法、電気光学装置、投射型表示装置および電子機器

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Also Published As

Publication number Publication date
US20130215351A1 (en) 2013-08-22
US6967696B2 (en) 2005-11-22
US20020123175A1 (en) 2002-09-05
US7675583B2 (en) 2010-03-09
KR19980081413A (ko) 1998-11-25
US20060072059A1 (en) 2006-04-06
JPH10288797A (ja) 1998-10-27
US20120019739A1 (en) 2012-01-26
US8405789B2 (en) 2013-03-26
US20100134709A1 (en) 2010-06-03
US8031284B2 (en) 2011-10-04
JP3856901B2 (ja) 2006-12-13
US6400426B1 (en) 2002-06-04
US8576348B2 (en) 2013-11-05

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