KR100537811B1 - 비균일한 이온 주입 방법을 이용한 반도체 공정 보상 - Google Patents

비균일한 이온 주입 방법을 이용한 반도체 공정 보상 Download PDF

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Publication number
KR100537811B1
KR100537811B1 KR10-2000-7001114A KR20007001114A KR100537811B1 KR 100537811 B1 KR100537811 B1 KR 100537811B1 KR 20007001114 A KR20007001114 A KR 20007001114A KR 100537811 B1 KR100537811 B1 KR 100537811B1
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KR
South Korea
Prior art keywords
ion implantation
parameters
measuring
wafer
spatial
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR10-2000-7001114A
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English (en)
Korean (ko)
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KR20010022525A (ko
Inventor
샵벨마린엘.
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
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Application filed by 어드밴스드 마이크로 디바이시즈, 인코포레이티드 filed Critical 어드밴스드 마이크로 디바이시즈, 인코포레이티드
Publication of KR20010022525A publication Critical patent/KR20010022525A/ko
Application granted granted Critical
Publication of KR100537811B1 publication Critical patent/KR100537811B1/ko
Assigned to 글로벌파운드리즈 인크. reassignment 글로벌파운드리즈 인크. 권리의 전부이전등록 Assignors: 어드밴스드 마이크로 디바이시즈, 인코포레이티드
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR10-2000-7001114A 1997-08-06 1998-06-10 비균일한 이온 주입 방법을 이용한 반도체 공정 보상 Expired - Fee Related KR100537811B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8/907,310 1997-08-06
US08/907,310 US6055460A (en) 1997-08-06 1997-08-06 Semiconductor process compensation utilizing non-uniform ion implantation methodology
US08/907,310 1997-08-06
PCT/US1998/012189 WO1999008306A1 (en) 1997-08-06 1998-06-10 Semiconductor process compensation utilizing non-uniform ion implantation methodology

Publications (2)

Publication Number Publication Date
KR20010022525A KR20010022525A (ko) 2001-03-15
KR100537811B1 true KR100537811B1 (ko) 2005-12-20

Family

ID=25423879

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-7001114A Expired - Fee Related KR100537811B1 (ko) 1997-08-06 1998-06-10 비균일한 이온 주입 방법을 이용한 반도체 공정 보상

Country Status (6)

Country Link
US (1) US6055460A (https=)
EP (1) EP1002329B1 (https=)
JP (1) JP2001512904A (https=)
KR (1) KR100537811B1 (https=)
DE (1) DE69832619T2 (https=)
WO (1) WO1999008306A1 (https=)

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* Cited by examiner, † Cited by third party
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KR20160134649A (ko) * 2014-01-15 2016-11-23 액셀리스 테크놀러지스, 인크. 가변 에너지 제어를 갖는 이온 주입 시스템 및 방법

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EP1295329A2 (en) * 2000-05-25 2003-03-26 Advanced Micro Devices, Inc. Method of controlling well leakage for trench isolations of differing depths
US6625512B1 (en) * 2000-07-25 2003-09-23 Advanced Micro Devices, Inc. Method and apparatus for performing final critical dimension control
US6856849B2 (en) 2000-12-06 2005-02-15 Advanced Micro Devices, Inc. Method for adjusting rapid thermal processing (RTP) recipe setpoints based on wafer electrical test (WET) parameters
US6934671B2 (en) * 2001-05-29 2005-08-23 International Business Machines Corporation Method and system for including parametric in-line test data in simulations for improved model to hardware correlation
US20030011018A1 (en) * 2001-07-13 2003-01-16 Hurley Kelly T. Flash floating gate using epitaxial overgrowth
JP3692999B2 (ja) * 2001-10-26 2005-09-07 日新イオン機器株式会社 イオン注入方法およびその装置
DE10208164B4 (de) * 2002-02-26 2006-01-12 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Steuern einer elektrischen Eigenschaft eines Feldeffekttransistors
AU2002356476A1 (en) * 2002-08-27 2004-03-19 Freescale Semiconductor, Inc. Fast simulation of circuitry having soi transistors
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US6828204B2 (en) * 2002-10-16 2004-12-07 Varian Semiconductor Equipment Associates, Inc. Method and system for compensating for anneal non-uniformities
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JP2004259882A (ja) * 2003-02-25 2004-09-16 Seiko Epson Corp 半導体装置及びその製造方法
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US6960774B2 (en) * 2003-11-03 2005-11-01 Advanced Micro Devices, Inc. Fault detection and control methodologies for ion implantation processes, and system for performing same
US20060088952A1 (en) * 2004-01-21 2006-04-27 Groves James F Method and system for focused ion beam directed self-assembly of metal oxide island structures
JP4251453B2 (ja) * 2004-02-23 2009-04-08 日新イオン機器株式会社 イオン注入方法
JP2005310634A (ja) * 2004-04-23 2005-11-04 Toshiba Corp イオン注入装置およびイオン注入方法
KR100606906B1 (ko) * 2004-12-29 2006-08-01 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 포토다이오드 및 그 제조방법
KR100672664B1 (ko) * 2004-12-29 2007-01-24 동부일렉트로닉스 주식회사 버티컬 씨모스 이미지 센서의 제조방법
KR100660319B1 (ko) * 2004-12-30 2006-12-22 동부일렉트로닉스 주식회사 씨모스 이미지센서 및 그의 제조방법
US20060258128A1 (en) * 2005-03-09 2006-11-16 Peter Nunan Methods and apparatus for enabling multiple process steps on a single substrate
KR20060102525A (ko) * 2005-03-22 2006-09-27 어플라이드 머티어리얼스, 인코포레이티드 이온빔을 이용한 기판 이온주입
US20060240651A1 (en) * 2005-04-26 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for adjusting ion implant parameters for improved process control
KR100675891B1 (ko) 2005-05-04 2007-02-02 주식회사 하이닉스반도체 불균일 이온주입장치 및 불균일 이온주입방법
KR100653999B1 (ko) * 2005-06-29 2006-12-06 주식회사 하이닉스반도체 와이드빔을 이용한 불균일 이온주입장치 및 이온주입방법
US7535031B2 (en) * 2005-09-13 2009-05-19 Philips Lumiled Lighting, Co. Llc Semiconductor light emitting device with lateral current injection in the light emitting region
KR100755069B1 (ko) * 2006-04-28 2007-09-06 주식회사 하이닉스반도체 불균일한 이온주입에너지를 갖도록 하는 이온주입장치 및방법
US7544957B2 (en) 2006-05-26 2009-06-09 Varian Semiconductor Equipment Associates, Inc. Non-uniform ion implantation
US7820527B2 (en) * 2008-02-20 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Cleave initiation using varying ion implant dose
US8487280B2 (en) 2010-10-21 2013-07-16 Varian Semiconductor Equipment Associates, Inc. Modulating implantation for improved workpiece splitting
KR20140045991A (ko) * 2011-07-25 2014-04-17 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 객체 특성화 및 제조공정 모니터링을 위한 방법 및 장치
US9002498B2 (en) * 2012-02-02 2015-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Tool function to improve fab process in semiconductor manufacturing
TW201442122A (zh) * 2012-12-25 2014-11-01 Ps4 Luxco Sarl 半導體裝置之製造方法
TWI714074B (zh) * 2015-01-16 2020-12-21 美商艾克塞利斯科技公司 離子植入系統及具有可變能量控制的方法
US11348813B2 (en) 2019-01-31 2022-05-31 Applied Materials, Inc. Correcting component failures in ion implant semiconductor manufacturing tool
JP7242470B2 (ja) * 2019-08-07 2023-03-20 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオン注入方法
US11817304B2 (en) 2019-12-30 2023-11-14 Micron Technology, Inc. Method of manufacturing microelectronic devices, related devices, systems, and apparatus
US11569063B2 (en) 2021-04-02 2023-01-31 Applied Materials, Inc. Apparatus, system and method for energy spread ion beam
JP2024529935A (ja) * 2021-08-05 2024-08-14 アクセリス テクノロジーズ， インコーポレイテッド 混合エネルギーイオン注入
KR20240043766A (ko) * 2021-08-05 2024-04-03 액셀리스 테크놀러지스, 인크. 혼합형 에너지 이온 주입
CN117941024A (zh) * 2021-08-05 2024-04-26 艾克塞利斯科技公司 混合能量离子注入
CN116844994A (zh) * 2022-03-23 2023-10-03 广东鸿浩半导体设备有限公司 一种用于全晶圆沉积的工艺和设备
CN119314904B (zh) * 2024-09-29 2026-01-23 上海积塔半导体有限公司 离子注入结构的位置确定方法、装置、设备及介质

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
KR20160134649A (ko) * 2014-01-15 2016-11-23 액셀리스 테크놀러지스, 인크. 가변 에너지 제어를 갖는 이온 주입 시스템 및 방법
KR102429370B1 (ko) * 2014-01-15 2022-08-04 액셀리스 테크놀러지스, 인크. 가변 에너지 제어를 갖는 이온 주입 시스템 및 방법

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Publication number Publication date
US6055460A (en) 2000-04-25
DE69832619D1 (de) 2006-01-05
KR20010022525A (ko) 2001-03-15
WO1999008306A1 (en) 1999-02-18
DE69832619T2 (de) 2006-08-17
EP1002329A1 (en) 2000-05-24
JP2001512904A (ja) 2001-08-28
EP1002329B1 (en) 2005-11-30

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