JP2001512904A - 非均一イオン注入法を用いる半導体処理の補償 - Google Patents

非均一イオン注入法を用いる半導体処理の補償

Info

Publication number
JP2001512904A
JP2001512904A JP2000506671A JP2000506671A JP2001512904A JP 2001512904 A JP2001512904 A JP 2001512904A JP 2000506671 A JP2000506671 A JP 2000506671A JP 2000506671 A JP2000506671 A JP 2000506671A JP 2001512904 A JP2001512904 A JP 2001512904A
Authority
JP
Japan
Prior art keywords
implantation
parameters
wafer
measuring
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000506671A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001512904A5 (https=
Inventor
ショップベル，マーリン・エル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2001512904A publication Critical patent/JP2001512904A/ja
Publication of JP2001512904A5 publication Critical patent/JP2001512904A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2000506671A 1997-08-06 1998-06-10 非均一イオン注入法を用いる半導体処理の補償 Pending JP2001512904A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/907,310 US6055460A (en) 1997-08-06 1997-08-06 Semiconductor process compensation utilizing non-uniform ion implantation methodology
US08/907,310 1997-08-06
PCT/US1998/012189 WO1999008306A1 (en) 1997-08-06 1998-06-10 Semiconductor process compensation utilizing non-uniform ion implantation methodology

Publications (2)

Publication Number Publication Date
JP2001512904A true JP2001512904A (ja) 2001-08-28
JP2001512904A5 JP2001512904A5 (https=) 2006-01-05

Family

ID=25423879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000506671A Pending JP2001512904A (ja) 1997-08-06 1998-06-10 非均一イオン注入法を用いる半導体処理の補償

Country Status (6)

Country Link
US (1) US6055460A (https=)
EP (1) EP1002329B1 (https=)
JP (1) JP2001512904A (https=)
KR (1) KR100537811B1 (https=)
DE (1) DE69832619T2 (https=)
WO (1) WO1999008306A1 (https=)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006503434A (ja) * 2002-10-16 2006-01-26 バリアン・セミコンダクター・イクイップメント・アソシエーツ・インコーポレーテッド アニール不均一性を補償するための方法及びシステム
JP2007299721A (ja) * 2006-04-28 2007-11-15 Hynix Semiconductor Inc 不均一なイオン注入エネルギーを得られるイオン注入装置及びその方法
US7365406B2 (en) 2005-05-04 2008-04-29 Hynix Semiconductor Inc. Non-uniform ion implantation apparatus and method thereof
JP2014526148A (ja) * 2011-07-25 2014-10-02 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 対象物を特徴付けて製造プロセスをモニタリングするための方法及び装置
JP2017510023A (ja) * 2014-01-15 2017-04-06 アクセリス テクノロジーズ， インコーポレイテッド 可変エネルギー制御を伴うイオン注入システムおよび方法
JP2021026938A (ja) * 2019-08-07 2021-02-22 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオン注入方法
JP2024529935A (ja) * 2021-08-05 2024-08-14 アクセリス テクノロジーズ， インコーポレイテッド 混合エネルギーイオン注入

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6403452B1 (en) 1999-02-22 2002-06-11 Kabushiki Kaisha Toshiba Ion implantation method and ion implantation equipment
US6567717B2 (en) * 2000-01-19 2003-05-20 Advanced Micro Devices, Inc. Feed-forward control of TCI doping for improving mass-production-wise, statistical distribution of critical performance parameters in semiconductor devices
EP1295329A2 (en) * 2000-05-25 2003-03-26 Advanced Micro Devices, Inc. Method of controlling well leakage for trench isolations of differing depths
US6625512B1 (en) * 2000-07-25 2003-09-23 Advanced Micro Devices, Inc. Method and apparatus for performing final critical dimension control
US6856849B2 (en) 2000-12-06 2005-02-15 Advanced Micro Devices, Inc. Method for adjusting rapid thermal processing (RTP) recipe setpoints based on wafer electrical test (WET) parameters
US6934671B2 (en) * 2001-05-29 2005-08-23 International Business Machines Corporation Method and system for including parametric in-line test data in simulations for improved model to hardware correlation
US20030011018A1 (en) * 2001-07-13 2003-01-16 Hurley Kelly T. Flash floating gate using epitaxial overgrowth
JP3692999B2 (ja) * 2001-10-26 2005-09-07 日新イオン機器株式会社 イオン注入方法およびその装置
DE10208164B4 (de) * 2002-02-26 2006-01-12 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Steuern einer elektrischen Eigenschaft eines Feldeffekttransistors
AU2002356476A1 (en) * 2002-08-27 2004-03-19 Freescale Semiconductor, Inc. Fast simulation of circuitry having soi transistors
US7224035B1 (en) * 2002-10-07 2007-05-29 Zyvex Corporation Apparatus and fabrication methods for incorporating sub-millimeter, high-resistivity mechanical components with low-resistivity conductors while maintaining electrical isolation therebetween
JP2004165241A (ja) * 2002-11-11 2004-06-10 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2004259882A (ja) * 2003-02-25 2004-09-16 Seiko Epson Corp 半導体装置及びその製造方法
KR100494439B1 (ko) * 2003-03-18 2005-06-10 삼성전자주식회사 이온주입설비의 이온주입 에너지 테스트방법
US6960774B2 (en) * 2003-11-03 2005-11-01 Advanced Micro Devices, Inc. Fault detection and control methodologies for ion implantation processes, and system for performing same
US20060088952A1 (en) * 2004-01-21 2006-04-27 Groves James F Method and system for focused ion beam directed self-assembly of metal oxide island structures
JP4251453B2 (ja) * 2004-02-23 2009-04-08 日新イオン機器株式会社 イオン注入方法
JP2005310634A (ja) * 2004-04-23 2005-11-04 Toshiba Corp イオン注入装置およびイオン注入方法
KR100606906B1 (ko) * 2004-12-29 2006-08-01 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 포토다이오드 및 그 제조방법
KR100672664B1 (ko) * 2004-12-29 2007-01-24 동부일렉트로닉스 주식회사 버티컬 씨모스 이미지 센서의 제조방법
KR100660319B1 (ko) * 2004-12-30 2006-12-22 동부일렉트로닉스 주식회사 씨모스 이미지센서 및 그의 제조방법
US20060258128A1 (en) * 2005-03-09 2006-11-16 Peter Nunan Methods and apparatus for enabling multiple process steps on a single substrate
KR20060102525A (ko) * 2005-03-22 2006-09-27 어플라이드 머티어리얼스, 인코포레이티드 이온빔을 이용한 기판 이온주입
US20060240651A1 (en) * 2005-04-26 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for adjusting ion implant parameters for improved process control
KR100653999B1 (ko) * 2005-06-29 2006-12-06 주식회사 하이닉스반도체 와이드빔을 이용한 불균일 이온주입장치 및 이온주입방법
US7535031B2 (en) * 2005-09-13 2009-05-19 Philips Lumiled Lighting, Co. Llc Semiconductor light emitting device with lateral current injection in the light emitting region
US7544957B2 (en) 2006-05-26 2009-06-09 Varian Semiconductor Equipment Associates, Inc. Non-uniform ion implantation
US7820527B2 (en) * 2008-02-20 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Cleave initiation using varying ion implant dose
US8487280B2 (en) 2010-10-21 2013-07-16 Varian Semiconductor Equipment Associates, Inc. Modulating implantation for improved workpiece splitting
US9002498B2 (en) * 2012-02-02 2015-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Tool function to improve fab process in semiconductor manufacturing
TW201442122A (zh) * 2012-12-25 2014-11-01 Ps4 Luxco Sarl 半導體裝置之製造方法
TWI714074B (zh) * 2015-01-16 2020-12-21 美商艾克塞利斯科技公司 離子植入系統及具有可變能量控制的方法
US11348813B2 (en) 2019-01-31 2022-05-31 Applied Materials, Inc. Correcting component failures in ion implant semiconductor manufacturing tool
US11817304B2 (en) 2019-12-30 2023-11-14 Micron Technology, Inc. Method of manufacturing microelectronic devices, related devices, systems, and apparatus
US11569063B2 (en) 2021-04-02 2023-01-31 Applied Materials, Inc. Apparatus, system and method for energy spread ion beam
KR20240043766A (ko) * 2021-08-05 2024-04-03 액셀리스 테크놀러지스, 인크. 혼합형 에너지 이온 주입
CN117941024A (zh) * 2021-08-05 2024-04-26 艾克塞利斯科技公司 混合能量离子注入
CN116844994A (zh) * 2022-03-23 2023-10-03 广东鸿浩半导体设备有限公司 一种用于全晶圆沉积的工艺和设备
CN119314904B (zh) * 2024-09-29 2026-01-23 上海积塔半导体有限公司 离子注入结构的位置确定方法、装置、设备及介质

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269561A (ja) * 1985-09-20 1987-03-30 Mitsubishi Electric Corp 半導体装置の製造方法
JPH04168763A (ja) * 1990-10-31 1992-06-16 Shimadzu Corp ポリシリコン抵抗体の製造方法
JPH0878439A (ja) * 1994-09-05 1996-03-22 Mitsubishi Electric Corp 半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4849641A (en) * 1987-06-22 1989-07-18 Berkowitz Edward H Real time non-destructive dose monitor
JPH01136331A (ja) * 1987-11-24 1989-05-29 Sumitomo Electric Ind Ltd 抵抗値調整装置及び抵抗値調整方法
JP2729130B2 (ja) * 1992-04-16 1998-03-18 三菱電機株式会社 半導体装置の製造パラメタの設定方法及びその装置
JPH0722601A (ja) * 1993-06-23 1995-01-24 Sony Corp 半導体装置の製造方法
JP3001351B2 (ja) * 1993-06-24 2000-01-24 日本電気株式会社 シミュレーション方法
JP2783168B2 (ja) * 1994-10-14 1998-08-06 日本電気株式会社 イオン注入シミュレーション方法
US5621652A (en) * 1995-03-21 1997-04-15 Vlsi Technology, Inc. System and method for verifying process models in integrated circuit process simulators
US5710700A (en) * 1995-12-18 1998-01-20 International Business Machines Corporation Optimizing functional operation in manufacturing control

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269561A (ja) * 1985-09-20 1987-03-30 Mitsubishi Electric Corp 半導体装置の製造方法
JPH04168763A (ja) * 1990-10-31 1992-06-16 Shimadzu Corp ポリシリコン抵抗体の製造方法
JPH0878439A (ja) * 1994-09-05 1996-03-22 Mitsubishi Electric Corp 半導体装置の製造方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006503434A (ja) * 2002-10-16 2006-01-26 バリアン・セミコンダクター・イクイップメント・アソシエーツ・インコーポレーテッド アニール不均一性を補償するための方法及びシステム
JP4820093B2 (ja) * 2002-10-16 2011-11-24 バリアン・セミコンダクター・イクイップメント・アソシエーツ・インコーポレーテッド アニール不均一性を補償するための方法及びシステム
US7365406B2 (en) 2005-05-04 2008-04-29 Hynix Semiconductor Inc. Non-uniform ion implantation apparatus and method thereof
US8343859B2 (en) 2005-05-04 2013-01-01 Hynix Semiconductor Inc. Non-uniform ion implantation apparatus and method thereof
JP2007299721A (ja) * 2006-04-28 2007-11-15 Hynix Semiconductor Inc 不均一なイオン注入エネルギーを得られるイオン注入装置及びその方法
JP2014526148A (ja) * 2011-07-25 2014-10-02 エレクトロ サイエンティフィック インダストリーズ インコーポレーテッド 対象物を特徴付けて製造プロセスをモニタリングするための方法及び装置
JP2017510023A (ja) * 2014-01-15 2017-04-06 アクセリス テクノロジーズ， インコーポレイテッド 可変エネルギー制御を伴うイオン注入システムおよび方法
JP2021026938A (ja) * 2019-08-07 2021-02-22 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオン注入方法
JP7242470B2 (ja) 2019-08-07 2023-03-20 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオン注入方法
TWI815024B (zh) * 2019-08-07 2023-09-11 日商住友重機械離子科技股份有限公司 離子植入裝置及離子植入方法
JP2024529935A (ja) * 2021-08-05 2024-08-14 アクセリス テクノロジーズ， インコーポレイテッド 混合エネルギーイオン注入

Also Published As

Publication number Publication date
US6055460A (en) 2000-04-25
DE69832619D1 (de) 2006-01-05
KR20010022525A (ko) 2001-03-15
WO1999008306A1 (en) 1999-02-18
DE69832619T2 (de) 2006-08-17
EP1002329A1 (en) 2000-05-24
KR100537811B1 (ko) 2005-12-20
EP1002329B1 (en) 2005-11-30

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