JP4820093B2 - アニール不均一性を補償するための方法及びシステム - Google Patents
アニール不均一性を補償するための方法及びシステム Download PDFInfo
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- JP4820093B2 JP4820093B2 JP2004544758A JP2004544758A JP4820093B2 JP 4820093 B2 JP4820093 B2 JP 4820093B2 JP 2004544758 A JP2004544758 A JP 2004544758A JP 2004544758 A JP2004544758 A JP 2004544758A JP 4820093 B2 JP4820093 B2 JP 4820093B2
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- 238000000137 annealing Methods 0.000 title claims description 73
- 238000000034 method Methods 0.000 title claims description 40
- 239000002019 doping agent Substances 0.000 claims description 67
- 238000002513 implantation Methods 0.000 claims description 25
- 230000008859 change Effects 0.000 claims description 18
- 239000007943 implant Substances 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 62
- 238000012545 processing Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 238000004590 computer program Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electron Sources, Ion Sources (AREA)
Description
発明の概要
Claims (12)
- アニール不均一性を補償し、前記アニール不均一性が電気的活性ドーパント濃度を低下させる領域で高いドーパント濃度を提供するための方法であって、
アニール装置に起因するアニール不均一性を特定するための段階と、
前記アニール不均一性を補償するための注入パターンを設計する段階と、
前記注入パターンに従って電気的活性ドーパントをウエハに注入する段階とを含み、
前記アニール不均一性を特定するための段階が、均一ドーパント分布を備えたサンプル・ウエハを前記アニール装置によりアニーリングし、アニーリングに伴って変化する前記サンプル・ウエハの特性を測定する段階とを含む、方法。 - 前記アニール不均一性を特定するための段階が、アニーリング後に前記サンプル・ウエハのシート抵抗を測定する段階を含む、請求項1に記載の方法。
- 前記アニール不均一性を特定するための段階が、アニーリング時に前記サンプル・ウエハの温度変化を測定する段階を含む、請求項1に記載の方法。
- 前記電気的活性ドーパントをウエハに注入する段階が、電気的活性ドーパントの注入に用いるビームを横切る方向のビーム電流密度と、前記ビームを通過する前記ウエハの通過角度との少なくとも一方を調節する段階を含む、請求項1に記載の方法。
- アニール不均一性を補償し、前記アニール不均一性が電気的活性ドーパント濃度を低下させる領域で高いドーパント濃度を提供するために、ウエハ注入装置を制御するプログラムが記録されたコンピュータ可読媒体であって、前記プログラムが、
アニール装置に起因するアニール不均一性を特定するための手順と、
前記アニール不均一性を補償するための注入パターンを設計する手順と、
前記注入パターンに従ってウエハ注入装置を制御し、電気的活性ドーパントをウエハに注入する手順とを含み、
前記アニール不均一性を特定するための手順が、均一ドーパント分布を備えたサンプル・ウエハを前記アニール装置によりアニーリングし、アニーリングに伴って変化する前記サンプル・ウエハの特性を測定する命令を含む、コンピュータ可読媒体。 - 前記アニール不均一性を特定するための手順が、アニーリング後に前記サンプル・ウエハのシート抵抗を測定する命令を含む、請求項5に記載のコンピュータ可読媒体。
- 前記アニール不均一性を特定するための手順が、アニーリング時に前記サンプル・ウエハの温度変化を測定する命令を含む、請求項5に記載のコンピュータ可読媒体。
- 前記電気的活性ドーパントをウエハに注入する手順が、ウエハ注入装置のビームを横切る方向のビーム電流密度と、前記ビームを通過する前記ウエハの通過角度との少なくとも一方を調節する命令を含む、請求項5に記載のコンピュータ可読媒体。
- 電気的活性ドーパントをウエハに注入するウエハ注入装置において、アニール不均一性を補償し、前記アニール不均一性が電気的活性ドーパント濃度を低下させる領域で高いドーパント濃度を提供するためのシステムであって、
アニール装置に起因するアニール不均一性を特定するための測定装置と、
前記アニール不均一性を補償するための注入パターンを設計するプロセッサと、
前記注入パターンに従って前記ウエハ注入装置を制御するコントローラとを含み、
前記アニール装置が均一ドーパント分布を備えたサンプル・ウエハをアニーリングし、前記測定装置がアニーリングに伴って変化する前記サンプル・ウエハの特性を測定するセンサを備える、システム。 - 前記センサが、アニーリング後に前記サンプル・ウエハのシート抵抗を測定する、請求項9に記載のシステム。
- 前記センサが、アニーリング時に前記サンプル・ウエハの温度変化を測定する温度センサである、請求項9に記載のシステム。
- 前記コントローラが、前記ウエハ注入装置のビームを横切る方向のビーム電流密度を変化させるためのビーム電流密度コントローラと、前記ビームを通過する前記ウエハの通過角度を変化させる通過角度コントローラとを含む、請求項9に記載のシステム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/272,166 | 2002-10-16 | ||
US10/272,166 US6828204B2 (en) | 2002-10-16 | 2002-10-16 | Method and system for compensating for anneal non-uniformities |
PCT/US2003/029385 WO2004035807A2 (en) | 2002-10-16 | 2003-09-18 | Method and system for compensating for anneal non-uniformities |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006503434A JP2006503434A (ja) | 2006-01-26 |
JP4820093B2 true JP4820093B2 (ja) | 2011-11-24 |
Family
ID=32092576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004544758A Expired - Fee Related JP4820093B2 (ja) | 2002-10-16 | 2003-09-18 | アニール不均一性を補償するための方法及びシステム |
Country Status (7)
Country | Link |
---|---|
US (1) | US6828204B2 (ja) |
EP (1) | EP1554749A2 (ja) |
JP (1) | JP4820093B2 (ja) |
KR (1) | KR101059655B1 (ja) |
AU (1) | AU2003270760A1 (ja) |
TW (1) | TWI241656B (ja) |
WO (1) | WO2004035807A2 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004063691B4 (de) | 2004-05-10 | 2019-01-17 | Hynix Semiconductor Inc. | Verfahren zum Implantieren von Ionen in einem Halbleiterbauelement |
KR100600356B1 (ko) * | 2004-12-29 | 2006-07-18 | 동부일렉트로닉스 주식회사 | 이온 주입 장비의 각 제로 위치 보정방법 |
US20060240651A1 (en) * | 2005-04-26 | 2006-10-26 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for adjusting ion implant parameters for improved process control |
US7602015B2 (en) * | 2005-08-25 | 2009-10-13 | International Rectifier Corporation | Process to control semiconductor wafer yield |
KR100870324B1 (ko) * | 2006-06-16 | 2008-11-25 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
US20070293026A1 (en) * | 2006-06-16 | 2007-12-20 | Hynix Semiconductor Inc. | Method of manufacturing semiconductor device |
US7679166B2 (en) * | 2007-02-26 | 2010-03-16 | International Business Machines Corporation | Localized temperature control during rapid thermal anneal |
US7759773B2 (en) | 2007-02-26 | 2010-07-20 | International Business Machines Corporation | Semiconductor wafer structure with balanced reflectance and absorption characteristics for rapid thermal anneal uniformity |
US7692275B2 (en) * | 2007-02-26 | 2010-04-06 | International Business Machines Corporation | Structure and method for device-specific fill for improved anneal uniformity |
US20090096066A1 (en) * | 2007-10-10 | 2009-04-16 | Anderson Brent A | Structure and Method for Device-Specific Fill for Improved Anneal Uniformity |
US7745909B2 (en) * | 2007-02-26 | 2010-06-29 | International Business Machines Corporation | Localized temperature control during rapid thermal anneal |
US7820527B2 (en) * | 2008-02-20 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Cleave initiation using varying ion implant dose |
US20090317937A1 (en) * | 2008-06-20 | 2009-12-24 | Atul Gupta | Maskless Doping Technique for Solar Cells |
US8598547B2 (en) | 2010-06-29 | 2013-12-03 | Varian Semiconductor Equipment Associates, Inc. | Handling beam glitches during ion implantation of workpieces |
JP2015050382A (ja) * | 2013-09-03 | 2015-03-16 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法、及び半導体製造装置 |
US9738968B2 (en) | 2015-04-23 | 2017-08-22 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for controlling implant process |
US10377665B2 (en) | 2015-11-19 | 2019-08-13 | Varian Semiconductor Equipment Associates, Inc. | Modifying bulk properties of a glass substrate |
GB2571997B (en) * | 2018-03-16 | 2021-10-27 | X Fab Texas Inc | Use of wafer brightness to monitor laser anneal process and laser anneal tool |
EP3916761A1 (en) * | 2020-05-27 | 2021-12-01 | Infineon Technologies Austria AG | Method for producing a superjunction device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62293622A (ja) * | 1986-06-12 | 1987-12-21 | Kokusai Electric Co Ltd | 半導体基板の熱処理装置 |
JPH0216726A (ja) * | 1988-05-03 | 1990-01-19 | Varian Assoc Inc | イオン注入量の測定のための方法及び装置 |
JPH0927461A (ja) * | 1995-07-10 | 1997-01-28 | Sanyo Electric Co Ltd | イオン注入装置の管理装置及びイオン注入装置の管理方法 |
JPH1116849A (ja) * | 1997-06-25 | 1999-01-22 | Sony Corp | イオン注入方法およびイオン注入装置 |
JP2001512904A (ja) * | 1997-08-06 | 2001-08-28 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 非均一イオン注入法を用いる半導体処理の補償 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6049220A (en) * | 1998-06-10 | 2000-04-11 | Boxer Cross Incorporated | Apparatus and method for evaluating a wafer of semiconductor material |
US6326219B2 (en) * | 1999-04-05 | 2001-12-04 | Ultratech Stepper, Inc. | Methods for determining wavelength and pulse length of radiant energy used for annealing |
US6124178A (en) * | 1999-08-26 | 2000-09-26 | Mosel Vitelic, Inc. | Method of manufacturing MOSFET devices |
US6594446B2 (en) * | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
-
2002
- 2002-10-16 US US10/272,166 patent/US6828204B2/en not_active Expired - Lifetime
-
2003
- 2003-09-18 JP JP2004544758A patent/JP4820093B2/ja not_active Expired - Fee Related
- 2003-09-18 WO PCT/US2003/029385 patent/WO2004035807A2/en not_active Application Discontinuation
- 2003-09-18 AU AU2003270760A patent/AU2003270760A1/en not_active Abandoned
- 2003-09-18 EP EP03752471A patent/EP1554749A2/en not_active Withdrawn
- 2003-09-18 KR KR1020057006331A patent/KR101059655B1/ko active IP Right Grant
- 2003-09-30 TW TW092126993A patent/TWI241656B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62293622A (ja) * | 1986-06-12 | 1987-12-21 | Kokusai Electric Co Ltd | 半導体基板の熱処理装置 |
JPH0216726A (ja) * | 1988-05-03 | 1990-01-19 | Varian Assoc Inc | イオン注入量の測定のための方法及び装置 |
JPH0927461A (ja) * | 1995-07-10 | 1997-01-28 | Sanyo Electric Co Ltd | イオン注入装置の管理装置及びイオン注入装置の管理方法 |
JPH1116849A (ja) * | 1997-06-25 | 1999-01-22 | Sony Corp | イオン注入方法およびイオン注入装置 |
JP2001512904A (ja) * | 1997-08-06 | 2001-08-28 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 非均一イオン注入法を用いる半導体処理の補償 |
Also Published As
Publication number | Publication date |
---|---|
AU2003270760A1 (en) | 2004-05-04 |
TW200411776A (en) | 2004-07-01 |
JP2006503434A (ja) | 2006-01-26 |
AU2003270760A8 (en) | 2004-05-04 |
US20040077149A1 (en) | 2004-04-22 |
EP1554749A2 (en) | 2005-07-20 |
KR101059655B1 (ko) | 2011-08-25 |
TWI241656B (en) | 2005-10-11 |
KR20050059255A (ko) | 2005-06-17 |
US6828204B2 (en) | 2004-12-07 |
WO2004035807A2 (en) | 2004-04-29 |
WO2004035807A3 (en) | 2004-07-01 |
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