Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
  • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
  • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
  • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
  • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
  • H01J2237/30—Electron or ion beam tubes for processing objects
  • H01J2237/317—Processing objects on a microscale
  • H01J2237/31701—Ion implantation
  • H01J2237/31703—Dosimetry

Definitions

• TITLE SEMICONDUCTOR PROCESS COMPENSATION UTILIZING NON-UNIFORM ION
• wafer processing like doping and etching, on ingot slices (or wafers) was initially performed on groups of wafers called wafer "runs". For example, for wet etching, a cassette containing several wafers would be submerged into an acid bath or for thermal annealing, a cassette containing several wafers would be introduced into large furnaces. In most cases of group processing, the wafers would exhibit variations in chemical, mechanical, and electrical parameters from wafer to wafer and across each wafer. As the diameter of the wafers increased, more processing tools were developed to process only single wafers at a time. Individual wafer processing reduced variations from wafer to wafer by varying processing parameters from one wafer to another to compensate for initial parameter variability. Process volume was reduced and each wafer experienced exactly the same gas flows, temperatures, etc. In large diffusion furnaces, there are temperature variations front-to-back and depletion effects front-to-back.
• Performing a process preferably comprises performing ion implantations, performing depositions of films, performing patterning of materials, performing etching of materials, or performing thermal growth of films.
• the semiconductor wafer comprises an epitaxial layer of lightly-doped single-crystalline silicon.
• Measuring a plurality of parameters preferably comprises measuring a plurality of physical, chemical and electrical parameters.
• Measuring a plurality of physical parameters comprises measuring a plurality of design dimensions of the devices.
• Measuring a plurality of chemical parameters comprises measuring doping profiles, and chemical compositions of materials.
• Measuring a plurality of electrical parameters comprises measuring sheet resistance of layers, measuring capacitance between design points, measuring threshold voltages, measuring operating voltages, measuring current consumption, delay time, response time, and break down parameters.
• Fig. 5 is a graph showing the distribution of threshold voltage of transistors across the wafer topography after compensation.
• Fig. 1 shows a schematic of an ion implanter.
• Ion source 10 ionizes the species to be implanted to form a plasma at low pressure, typically 10 '3 torr.
• a voltage difference in the range of 15-40 kV is then applied between ion source 10 and plates 20 to extract and accelerate the ions which now form beam 30.
• Beam 30 is subsequently routed through analyzing device 40, typically a magnet, which spatially separates the beam according to the ionic mass of its constituents.
• the analyzer directs only ions with a specific mass toward the target while impurities with different ionic masses are disposed elsewhere.
• Ion implantation has the ability to precisely control the number of implanted dopant atoms into substrates to within less than 1%.
• ion implantation is clearly superior to chemical deposition techniques and gas diffusion. Mass separation by the ion implanter ensures a very pure dopant. Because of the ion implantation's precise control over implantation energies, dosage, and position of implantation, ion implantation is the preferred method for correcting for spatial variations in other semiconductor processes.

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• Chemical & Material Sciences (AREA)
• Analytical Chemistry (AREA)
• Testing Or Measuring Of Semiconductors Or The Like (AREA)
• Insulated Gate Type Field-Effect Transistor (AREA)

Priority Applications (4)

Applications Claiming Priority (2)

Publications (1)

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Cited By (8)

Families Citing this family (38)

Citations (6)

Family Cites Families (5)

• 1997
  • 1997-08-06 US US08/907,310 patent/US6055460A/en not_active Expired - Lifetime
• 1998
  • 1998-06-10 EP EP98929014A patent/EP1002329B1/en not_active Expired - Lifetime
  • 1998-06-10 JP JP2000506671A patent/JP2001512904A/ja active Pending
  • 1998-06-10 KR KR10-2000-7001114A patent/KR100537811B1/ko not_active Expired - Fee Related
  • 1998-06-10 DE DE69832619T patent/DE69832619T2/de not_active Expired - Lifetime
  • 1998-06-10 WO PCT/US1998/012189 patent/WO1999008306A1/en not_active Ceased

Patent Citations (6)

Non-Patent Citations (3)

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