KR100527149B1 - 유전체 막 및 그 형성방법, 및 유전체 막을 이용한 반도체장치 및 그 제조방법 - Google Patents

유전체 막 및 그 형성방법, 및 유전체 막을 이용한 반도체장치 및 그 제조방법 Download PDF

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KR100527149B1
KR100527149B1 KR10-2003-0066819A KR20030066819A KR100527149B1 KR 100527149 B1 KR100527149 B1 KR 100527149B1 KR 20030066819 A KR20030066819 A KR 20030066819A KR 100527149 B1 KR100527149 B1 KR 100527149B1
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dielectric film
silicon
gas
semiconductor device
plasma
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Expired - Fee Related
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Korean (ko)
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KR20040048808A (ko
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마사시 고토
유키히코 나카타
카즈후미 아즈마
데쯔야 오까모토
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가부시끼가이샤 에키쇼 센탄 기쥬츠 가이하쯔 센터
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H

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  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
KR10-2003-0066819A 2002-12-03 2003-09-26 유전체 막 및 그 형성방법, 및 유전체 막을 이용한 반도체장치 및 그 제조방법 Expired - Fee Related KR100527149B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00351167 2002-12-03
JP2002351167 2002-12-03
JPJP-P-2003-00121773 2003-04-25
JP2003121773 2003-04-25
JP2003309332A JP2004343031A (ja) 2002-12-03 2003-09-01 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法
JPJP-P-2003-00309332 2003-09-01

Publications (2)

Publication Number Publication Date
KR20040048808A KR20040048808A (ko) 2004-06-10
KR100527149B1 true KR100527149B1 (ko) 2005-11-08

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KR10-2003-0066819A Expired - Fee Related KR100527149B1 (ko) 2002-12-03 2003-09-26 유전체 막 및 그 형성방법, 및 유전체 막을 이용한 반도체장치 및 그 제조방법

Country Status (5)

Country Link
US (2) US20040113227A1 (enExample)
JP (1) JP2004343031A (enExample)
KR (1) KR100527149B1 (enExample)
CN (1) CN1312743C (enExample)
TW (1) TWI230969B (enExample)

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US7763327B2 (en) * 1996-04-22 2010-07-27 Micron Technology, Inc. Methods using ozone for CVD deposited films
US7273638B2 (en) * 2003-01-07 2007-09-25 International Business Machines Corp. High density plasma oxidation
US7282438B1 (en) 2004-06-15 2007-10-16 Novellus Systems, Inc. Low-k SiC copper diffusion barrier films
US20090053903A1 (en) * 2004-08-31 2009-02-26 Tokyo Electron Limited Silicon oxide film forming method, semiconductor device manufacturing method and computer storage medium
JP4028538B2 (ja) * 2004-09-10 2007-12-26 株式会社東芝 半導体装置の製造方法およびその製造装置
JP2006135161A (ja) * 2004-11-08 2006-05-25 Canon Inc 絶縁膜の形成方法及び装置
KR100648632B1 (ko) * 2005-01-25 2006-11-23 삼성전자주식회사 높은 유전율을 갖는 유전체 구조물의 제조 방법 및 이를 포함하는 반도체 소자의 제조 방법
JP5084169B2 (ja) * 2005-04-28 2012-11-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8129290B2 (en) * 2005-05-26 2012-03-06 Applied Materials, Inc. Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure
US8138104B2 (en) * 2005-05-26 2012-03-20 Applied Materials, Inc. Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure
JP4679437B2 (ja) * 2005-06-02 2011-04-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7820495B2 (en) 2005-06-30 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2007043121A (ja) * 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4897948B2 (ja) * 2005-09-02 2012-03-14 古河電気工業株式会社 半導体素子
CN101577293B (zh) 2005-11-15 2012-09-19 株式会社半导体能源研究所 半导体器件及其制造方法
JP2007250715A (ja) * 2006-03-15 2007-09-27 Konica Minolta Holdings Inc 半導体デバイスの製造方法
US7932138B2 (en) * 2007-12-28 2011-04-26 Viatron Technologies Inc. Method for manufacturing thin film transistor
JP2010192755A (ja) * 2009-02-19 2010-09-02 Tokyo Electron Ltd シリコン酸化膜の成膜方法および半導体装置の製造方法
US20120190211A1 (en) * 2009-09-17 2012-07-26 Tokyo Electron Limited Film forming method, semiconductor device manufacturing method, insulating film and semiconductor device
JP5601821B2 (ja) * 2009-11-11 2014-10-08 三菱電機株式会社 薄膜トランジスタおよびその製造方法
KR101657341B1 (ko) * 2011-04-25 2016-09-13 도쿄엘렉트론가부시키가이샤 성막 방법
CN102260857B (zh) * 2011-07-25 2013-02-06 润峰电力有限公司 一种晶硅表面镀膜及其制备方法
JP5814712B2 (ja) * 2011-09-15 2015-11-17 日本放送協会 薄膜デバイスの製造方法
JP2013179106A (ja) * 2012-02-28 2013-09-09 Hitachi Ltd Ｍｉｍキャパシタを有する半導体装置
JP2013214655A (ja) * 2012-04-03 2013-10-17 Nippon Telegr & Teleph Corp <Ntt> 光半導体素子
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US8975625B2 (en) * 2013-05-14 2015-03-10 Applied Materials, Inc. TFT with insert in passivation layer or etch stop layer
KR102250116B1 (ko) 2020-08-20 2021-05-11 쿠팡 주식회사 보냉 포장박스

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Publication number Publication date
US20090029507A1 (en) 2009-01-29
TWI230969B (en) 2005-04-11
JP2004343031A (ja) 2004-12-02
TW200410297A (en) 2004-06-16
US20040113227A1 (en) 2004-06-17
CN1312743C (zh) 2007-04-25
CN1505116A (zh) 2004-06-16
KR20040048808A (ko) 2004-06-10

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