TWI230969B - Dielectric film, its formation method, semiconductor device using the dielectric film and its production method - Google Patents

Dielectric film, its formation method, semiconductor device using the dielectric film and its production method Download PDF

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Publication number
TWI230969B
TWI230969B TW092124712A TW92124712A TWI230969B TW I230969 B TWI230969 B TW I230969B TW 092124712 A TW092124712 A TW 092124712A TW 92124712 A TW92124712 A TW 92124712A TW I230969 B TWI230969 B TW I230969B
Authority
TW
Taiwan
Prior art keywords
dielectric film
substrate
silicon
oxygen
mentioned
Prior art date
Application number
TW092124712A
Other languages
English (en)
Chinese (zh)
Other versions
TW200410297A (en
Inventor
Masashi Goto
Yukihiko Nakata
Kazufumi Azuma
Tetsuya Okamoto
Original Assignee
Ekisho Sentan Gijutsu Kaihatsu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ekisho Sentan Gijutsu Kaihatsu filed Critical Ekisho Sentan Gijutsu Kaihatsu
Publication of TW200410297A publication Critical patent/TW200410297A/zh
Application granted granted Critical
Publication of TWI230969B publication Critical patent/TWI230969B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H

Landscapes

  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
TW092124712A 2002-12-03 2003-09-08 Dielectric film, its formation method, semiconductor device using the dielectric film and its production method TWI230969B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002351167 2002-12-03
JP2003121773 2003-04-25
JP2003309332A JP2004343031A (ja) 2002-12-03 2003-09-01 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
TW200410297A TW200410297A (en) 2004-06-16
TWI230969B true TWI230969B (en) 2005-04-11

Family

ID=32512115

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092124712A TWI230969B (en) 2002-12-03 2003-09-08 Dielectric film, its formation method, semiconductor device using the dielectric film and its production method

Country Status (5)

Country Link
US (2) US20040113227A1 (enExample)
JP (1) JP2004343031A (enExample)
KR (1) KR100527149B1 (enExample)
CN (1) CN1312743C (enExample)
TW (1) TWI230969B (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US11639245B2 (en) 2020-08-20 2023-05-02 Coupang Corp. Packaging box for cooling

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US7763327B2 (en) * 1996-04-22 2010-07-27 Micron Technology, Inc. Methods using ozone for CVD deposited films
US7273638B2 (en) * 2003-01-07 2007-09-25 International Business Machines Corp. High density plasma oxidation
US7282438B1 (en) 2004-06-15 2007-10-16 Novellus Systems, Inc. Low-k SiC copper diffusion barrier films
US20090053903A1 (en) * 2004-08-31 2009-02-26 Tokyo Electron Limited Silicon oxide film forming method, semiconductor device manufacturing method and computer storage medium
JP4028538B2 (ja) * 2004-09-10 2007-12-26 株式会社東芝 半導体装置の製造方法およびその製造装置
JP2006135161A (ja) * 2004-11-08 2006-05-25 Canon Inc 絶縁膜の形成方法及び装置
KR100648632B1 (ko) * 2005-01-25 2006-11-23 삼성전자주식회사 높은 유전율을 갖는 유전체 구조물의 제조 방법 및 이를 포함하는 반도체 소자의 제조 방법
JP5084169B2 (ja) * 2005-04-28 2012-11-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8129290B2 (en) * 2005-05-26 2012-03-06 Applied Materials, Inc. Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure
US8138104B2 (en) * 2005-05-26 2012-03-20 Applied Materials, Inc. Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure
JP4679437B2 (ja) * 2005-06-02 2011-04-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7820495B2 (en) 2005-06-30 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2007043121A (ja) * 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4897948B2 (ja) * 2005-09-02 2012-03-14 古河電気工業株式会社 半導体素子
CN101577293B (zh) 2005-11-15 2012-09-19 株式会社半导体能源研究所 半导体器件及其制造方法
JP2007250715A (ja) * 2006-03-15 2007-09-27 Konica Minolta Holdings Inc 半導体デバイスの製造方法
US7932138B2 (en) * 2007-12-28 2011-04-26 Viatron Technologies Inc. Method for manufacturing thin film transistor
JP2010192755A (ja) * 2009-02-19 2010-09-02 Tokyo Electron Ltd シリコン酸化膜の成膜方法および半導体装置の製造方法
US20120190211A1 (en) * 2009-09-17 2012-07-26 Tokyo Electron Limited Film forming method, semiconductor device manufacturing method, insulating film and semiconductor device
JP5601821B2 (ja) * 2009-11-11 2014-10-08 三菱電機株式会社 薄膜トランジスタおよびその製造方法
KR101657341B1 (ko) * 2011-04-25 2016-09-13 도쿄엘렉트론가부시키가이샤 성막 방법
CN102260857B (zh) * 2011-07-25 2013-02-06 润峰电力有限公司 一种晶硅表面镀膜及其制备方法
JP5814712B2 (ja) * 2011-09-15 2015-11-17 日本放送協会 薄膜デバイスの製造方法
JP2013179106A (ja) * 2012-02-28 2013-09-09 Hitachi Ltd Ｍｉｍキャパシタを有する半導体装置
JP2013214655A (ja) * 2012-04-03 2013-10-17 Nippon Telegr & Teleph Corp <Ntt> 光半導体素子
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US8975625B2 (en) * 2013-05-14 2015-03-10 Applied Materials, Inc. TFT with insert in passivation layer or etch stop layer

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US5274602A (en) * 1991-10-22 1993-12-28 Florida Atlantic University Large capacity solid-state memory
JPH11279773A (ja) * 1998-03-27 1999-10-12 Tomoo Ueno 成膜方法
JP3698390B2 (ja) * 1998-07-29 2005-09-21 パイオニア株式会社 電子放出表示装置及び電子放出装置
US6018187A (en) * 1998-10-19 2000-01-25 Hewlett-Packard Cmpany Elevated pin diode active pixel sensor including a unique interconnection structure
US6218314B1 (en) * 1999-04-01 2001-04-17 Taiwan Semiconductor Manufacturing Company Silicon dioxide-oxynitride continuity film as a passivation film
JP2001109014A (ja) * 1999-10-05 2001-04-20 Hitachi Ltd アクティブマトリクス型液晶表示装置
JP2001110802A (ja) * 1999-10-06 2001-04-20 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法
US6288435B1 (en) * 1999-12-28 2001-09-11 Xerox Corporation Continuous amorphous silicon layer sensors using doped poly-silicon back contact
US6613695B2 (en) * 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
US6639281B2 (en) * 2001-04-10 2003-10-28 Sarnoff Corporation Method and apparatus for providing a high-performance active matrix pixel using organic thin-film transistors
US7294517B2 (en) * 2001-06-18 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11639245B2 (en) 2020-08-20 2023-05-02 Coupang Corp. Packaging box for cooling

Also Published As

Publication number Publication date
US20090029507A1 (en) 2009-01-29
JP2004343031A (ja) 2004-12-02
TW200410297A (en) 2004-06-16
KR100527149B1 (ko) 2005-11-08
US20040113227A1 (en) 2004-06-17
CN1312743C (zh) 2007-04-25
CN1505116A (zh) 2004-06-16
KR20040048808A (ko) 2004-06-10

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