KR100511381B1 - 국부평탄도를 향상시킨 반도체 웨이퍼 및 그 제조방법 - Google Patents

국부평탄도를 향상시킨 반도체 웨이퍼 및 그 제조방법 Download PDF

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Publication number
KR100511381B1
KR100511381B1 KR10-2002-0050844A KR20020050844A KR100511381B1 KR 100511381 B1 KR100511381 B1 KR 100511381B1 KR 20020050844 A KR20020050844 A KR 20020050844A KR 100511381 B1 KR100511381 B1 KR 100511381B1
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South Korea
Prior art keywords
semiconductor wafer
wafer
grinding
polishing
ddg
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KR10-2002-0050844A
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English (en)
Korean (ko)
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KR20030019144A (ko
Inventor
조지제이피츠
미켈케르스탄
안톤후버
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실트로닉 아게
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR10-2002-0050844A 2001-08-30 2002-08-27 국부평탄도를 향상시킨 반도체 웨이퍼 및 그 제조방법 Expired - Lifetime KR100511381B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10142400.0 2001-08-30
DE10142400A DE10142400B4 (de) 2001-08-30 2001-08-30 Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung

Publications (2)

Publication Number Publication Date
KR20030019144A KR20030019144A (ko) 2003-03-06
KR100511381B1 true KR100511381B1 (ko) 2005-08-31

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KR10-2002-0050844A Expired - Lifetime KR100511381B1 (ko) 2001-08-30 2002-08-27 국부평탄도를 향상시킨 반도체 웨이퍼 및 그 제조방법

Country Status (6)

Country Link
US (1) US7077726B2 (enExample)
JP (2) JP2007053119A (enExample)
KR (1) KR100511381B1 (enExample)
CN (1) CN1265439C (enExample)
DE (1) DE10142400B4 (enExample)
TW (1) TW575929B (enExample)

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DE102004005702A1 (de) * 2004-02-05 2005-09-01 Siltronic Ag Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe
DE102004031966A1 (de) * 2004-07-01 2006-01-19 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102005046726B4 (de) * 2005-09-29 2012-02-02 Siltronic Ag Nichtpolierte monokristalline Siliziumscheibe und Verfahren zu ihrer Herstellung
CN101410224B (zh) * 2006-01-30 2012-01-25 Memc电子材料有限公司 双面晶片磨具以及工件纳米形貌的估计方法
US7930058B2 (en) * 2006-01-30 2011-04-19 Memc Electronic Materials, Inc. Nanotopography control and optimization using feedback from warp data
US7601049B2 (en) * 2006-01-30 2009-10-13 Memc Electronic Materials, Inc. Double side wafer grinder and methods for assessing workpiece nanotopology
US7662023B2 (en) * 2006-01-30 2010-02-16 Memc Electronic Materials, Inc. Double side wafer grinder and methods for assessing workpiece nanotopology
DE102006062872B4 (de) * 2006-07-13 2012-06-14 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
DE102006062871B4 (de) * 2006-07-13 2012-06-21 Peter Wolters Gmbh Verfahren zum gleichzeitigen beidseitigen Schleifen mehrerer Halbleiterscheiben
DE102007030958B4 (de) 2007-07-04 2014-09-11 Siltronic Ag Verfahren zum Schleifen von Halbleiterscheiben
CH701168B1 (de) * 2007-08-17 2010-12-15 Kellenberger & Co Ag L Verfahren und Bearbeitungsmaschine zur Behandlung von Werkstücken.
JP5600867B2 (ja) * 2008-06-16 2014-10-08 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
JP2010073137A (ja) * 2008-09-22 2010-04-02 Nec Electronics Corp 半導体集積回路設計方法及び設計プログラム
DE102008053610B4 (de) * 2008-10-29 2011-03-31 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
DE102009025243B4 (de) 2009-06-17 2011-11-17 Siltronic Ag Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium
DE102009051008B4 (de) * 2009-10-28 2013-05-23 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102010005904B4 (de) * 2010-01-27 2012-11-22 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102011083041B4 (de) * 2010-10-20 2018-06-07 Siltronic Ag Stützring zum Abstützen einer Halbleiterscheibe aus einkristallinem Silizium während einer Wärmebehandlung und Verfahren zur Wärmebehandlung einer solchen Halbleiterscheibe unter Verwendung eines solchen Stützrings
JP6045542B2 (ja) * 2014-09-11 2016-12-14 信越半導体株式会社 半導体ウェーハの加工方法、貼り合わせウェーハの製造方法、及びエピタキシャルウェーハの製造方法
CN106482692A (zh) * 2016-09-29 2017-03-08 广州兴森快捷电路科技有限公司 3d打印阻焊厚度均匀性的测试方法及测试装置
EP3364247A1 (en) 2017-02-17 2018-08-22 ASML Netherlands B.V. Methods & apparatus for monitoring a lithographic manufacturing process
CN112454014B (zh) * 2020-10-29 2022-10-11 中国工程物理研究院激光聚变研究中心 一种红外透明陶瓷晶粒尺寸的测量方法
CN112621557B (zh) * 2020-12-17 2022-08-09 江苏集萃精凯高端装备技术有限公司 Yag晶片的抛光方法
EP4047635A1 (de) * 2021-02-18 2022-08-24 Siltronic AG Verfahren zur herstellung von scheiben aus einem zylindrischen stab aus halbleitermaterial
CN113611593B (zh) * 2021-08-02 2024-06-14 中国电子科技集团公司第四十六研究所 一种超薄锗片翘曲形貌的控制方法

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KR970008384A (ko) * 1995-07-03 1997-02-24 나가사와 마사유키 실리콘웨이퍼의 제조방법과 그 장치
KR100227924B1 (ko) * 1995-07-28 1999-11-01 가이데 히사오 반도체 웨이퍼 제조방법, 그 방법에 사용되는 연삭방법 및 이에 사용되는 장치
JP2000150431A (ja) * 1998-11-06 2000-05-30 Shin Etsu Handotai Co Ltd 半導体ウエーハおよびその製造方法

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JPH02106259A (ja) * 1988-10-14 1990-04-18 Daisho Seiki Kk 両頭平面研削装置
JP2839801B2 (ja) 1992-09-18 1998-12-16 三菱マテリアル株式会社 ウェーハの製造方法
JPH0976147A (ja) * 1995-09-08 1997-03-25 Kao Corp 表面加工基板及びその製造方法
JP3620554B2 (ja) * 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
JPH09270396A (ja) 1996-03-29 1997-10-14 Komatsu Electron Metals Co Ltd 半導体ウェハの製法
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DE19704546A1 (de) * 1997-02-06 1998-08-13 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer einseitig beschichteten und mit einem Finish versehenen Halbleiterscheibe
JPH10256203A (ja) * 1997-03-11 1998-09-25 Super Silicon Kenkyusho:Kk 鏡面仕上げされた薄板状ウェーハの製造方法
US6296553B1 (en) 1997-04-02 2001-10-02 Nippei Toyama Corporation Grinding method, surface grinder, workpiece support, mechanism and work rest
JPH11154655A (ja) * 1997-11-21 1999-06-08 Komatsu Electron Metals Co Ltd 半導体ウェハの製造方法
DE19823904A1 (de) * 1998-05-28 1999-12-02 Wacker Siltronic Halbleitermat Hochebene Halbleiterscheibe aus Silicium und Verfahren zur Herstellung von Halbleiterscheiben
JP3328193B2 (ja) 1998-07-08 2002-09-24 信越半導体株式会社 半導体ウエーハの製造方法
DE19833257C1 (de) * 1998-07-23 1999-09-30 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe
JP4493062B2 (ja) * 1999-06-30 2010-06-30 株式会社Ｓｕｍｃｏ 両面研磨ウェーハの製造方法
JP3794538B2 (ja) * 1999-09-02 2006-07-05 信越半導体株式会社 両面同時研削装置および両面同時研削方法
WO2001021356A1 (fr) * 1999-09-24 2001-03-29 Shin-Etsu Handotai Co., Ltd. Procede et dispositif de meulage des deux faces d'un disque fin

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KR970008384A (ko) * 1995-07-03 1997-02-24 나가사와 마사유키 실리콘웨이퍼의 제조방법과 그 장치
KR100227924B1 (ko) * 1995-07-28 1999-11-01 가이데 히사오 반도체 웨이퍼 제조방법, 그 방법에 사용되는 연삭방법 및 이에 사용되는 장치
JP2000150431A (ja) * 1998-11-06 2000-05-30 Shin Etsu Handotai Co Ltd 半導体ウエーハおよびその製造方法

Also Published As

Publication number Publication date
US7077726B2 (en) 2006-07-18
JP2007053119A (ja) 2007-03-01
TW575929B (en) 2004-02-11
CN1434489A (zh) 2003-08-06
KR20030019144A (ko) 2003-03-06
DE10142400B4 (de) 2009-09-03
CN1265439C (zh) 2006-07-19
US20030060050A1 (en) 2003-03-27
DE10142400A1 (de) 2003-03-27
JP2010283371A (ja) 2010-12-16
JP5358531B2 (ja) 2013-12-04

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