KR100497688B1 - 저전압플래시eeprom메모리용행구동회로 - Google Patents

저전압플래시eeprom메모리용행구동회로 Download PDF

Info

Publication number
KR100497688B1
KR100497688B1 KR1019970047089A KR19970047089A KR100497688B1 KR 100497688 B1 KR100497688 B1 KR 100497688B1 KR 1019970047089 A KR1019970047089 A KR 1019970047089A KR 19970047089 A KR19970047089 A KR 19970047089A KR 100497688 B1 KR100497688 B1 KR 100497688B1
Authority
KR
South Korea
Prior art keywords
transistor
node
voltage
gate
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019970047089A
Other languages
English (en)
Korean (ko)
Other versions
KR19980024604A (ko
Inventor
토마소 베리
스테파노 메니첼리
Original Assignee
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 텍사스 인스트루먼츠 인코포레이티드 filed Critical 텍사스 인스트루먼츠 인코포레이티드
Publication of KR19980024604A publication Critical patent/KR19980024604A/ko
Application granted granted Critical
Publication of KR100497688B1 publication Critical patent/KR100497688B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Logic Circuits (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
KR1019970047089A 1996-09-13 1997-09-12 저전압플래시eeprom메모리용행구동회로 Expired - Lifetime KR100497688B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT96RM000626A IT1285894B1 (it) 1996-09-13 1996-09-13 Circuito di pilotaggio di riga per memorie flash eeprom a bassa tensione.
ITRM96A000626 1996-09-13

Publications (2)

Publication Number Publication Date
KR19980024604A KR19980024604A (ko) 1998-07-06
KR100497688B1 true KR100497688B1 (ko) 2005-09-08

Family

ID=11404419

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970047089A Expired - Lifetime KR100497688B1 (ko) 1996-09-13 1997-09-12 저전압플래시eeprom메모리용행구동회로

Country Status (6)

Country Link
EP (1) EP0829881B1 (enExample)
JP (1) JP4519953B2 (enExample)
KR (1) KR100497688B1 (enExample)
DE (1) DE69720126T2 (enExample)
IT (1) IT1285894B1 (enExample)
SG (1) SG67418A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3410084B2 (ja) 2001-09-20 2003-05-26 沖電気工業株式会社 電圧トランスレータ
JP3466593B2 (ja) * 2001-09-20 2003-11-10 沖電気工業株式会社 電圧トランスレータ回路
JP3532181B2 (ja) 2001-11-21 2004-05-31 沖電気工業株式会社 電圧トランスレータ
WO2010076833A1 (en) 2008-12-31 2010-07-08 Fabio Pellizzer Word-line driver including pull-up resistor and pull-down transistor
TWI502890B (zh) * 2009-07-02 2015-10-01 Advanced Risc Mach Ltd 電壓位準平移器與用於平移電壓位準之方法
US8908439B2 (en) * 2012-09-07 2014-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Adaptive word-line boost driver

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04228192A (ja) * 1990-04-23 1992-08-18 Texas Instr Inc <Ti> 不揮発性記憶セルアレイの語線に電源電圧とプログラミング電圧を印加する語線駆動回路
JPH07235190A (ja) * 1994-02-24 1995-09-05 Sony Corp 半導体不揮発性記憶装置
KR0170293B1 (ko) * 1995-12-29 1999-03-30 김광호 이.이.피.롬 장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4823318A (en) * 1988-09-02 1989-04-18 Texas Instruments Incorporated Driving circuitry for EEPROM memory cell
JPH06338193A (ja) * 1993-05-28 1994-12-06 Hitachi Ltd 不揮発性半導体記憶装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04228192A (ja) * 1990-04-23 1992-08-18 Texas Instr Inc <Ti> 不揮発性記憶セルアレイの語線に電源電圧とプログラミング電圧を印加する語線駆動回路
JPH07235190A (ja) * 1994-02-24 1995-09-05 Sony Corp 半導体不揮発性記憶装置
KR0170293B1 (ko) * 1995-12-29 1999-03-30 김광호 이.이.피.롬 장치

Also Published As

Publication number Publication date
EP0829881A2 (en) 1998-03-18
DE69720126T2 (de) 2003-12-04
JP4519953B2 (ja) 2010-08-04
SG67418A1 (en) 1999-09-21
DE69720126D1 (de) 2003-04-30
JPH10149693A (ja) 1998-06-02
EP0829881A3 (en) 1999-07-07
EP0829881B1 (en) 2003-03-26
IT1285894B1 (it) 1998-06-24
KR19980024604A (ko) 1998-07-06
ITRM960626A1 (it) 1998-03-13

Similar Documents

Publication Publication Date Title
KR970003809B1 (ko) 소거특성을 개량한 플래쉬메모리 및 그것에 대한 회로
US6370063B2 (en) Word line driver having a divided bias line in a non-volatile memory device and method for driving word lines
JP2723278B2 (ja) ハイキャパシタンス線プログラミング用デコーダ・ドライバ回路
EP0639000B1 (en) Flip-flop type amplifier circuit
KR102114574B1 (ko) 레벨 시프터 및 반도체 장치
KR930001654B1 (ko) 반도체 메모리 집적회로
KR100464113B1 (ko) 반도체 회로
KR100220939B1 (ko) 반도체 메모리 장치의 워드라인 구동방법
KR20030009101A (ko) 플래시 메모리용 고속 디코더
KR100497688B1 (ko) 저전압플래시eeprom메모리용행구동회로
US6259631B1 (en) Row drive circuit equipped with feedback transistors for low voltage flash EEPROM memories
US6195297B1 (en) Semiconductor memory device having pull-down function for non-selected bit lines
US20030094971A1 (en) Voltage translator
KR0136894B1 (ko) 반도체 메모리 장치의 버퍼 회로
US5757713A (en) Adjustable write voltage circuit for SRAMS
JPH097381A (ja) 半導体装置
US4435791A (en) CMOS Address buffer for a semiconductor memory
US6559678B1 (en) Node predisposition circuit
JPH02125525A (ja) 半導体装置
JPH0318277B2 (enExample)
KR100308069B1 (ko) 부트스트랩핑 회로
JP3168977B2 (ja) 半導体装置
US7372308B2 (en) High-voltage generation circuits and nonvolatile semiconductor memory device with improved high-voltage efficiency and methods of operating
JPS6322392B2 (enExample)
KR19990061063A (ko) 데이타 출력버퍼

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19970912

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20020912

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19970912

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20041015

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20050401

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20050617

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20050620

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20080414

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20090415

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20100531

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20110530

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20120530

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20130531

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20130531

Start annual number: 9

End annual number: 9

FPAY Annual fee payment

Payment date: 20140529

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20140529

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20160330

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20160330

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20170330

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20170330

Start annual number: 13

End annual number: 13

EXPY Expiration of term
PC1801 Expiration of term

Termination date: 20180312

Termination category: Expiration of duration