IT1285894B1 - Circuito di pilotaggio di riga per memorie flash eeprom a bassa tensione. - Google Patents

Circuito di pilotaggio di riga per memorie flash eeprom a bassa tensione.

Info

Publication number
IT1285894B1
IT1285894B1 IT96RM000626A ITRM960626A IT1285894B1 IT 1285894 B1 IT1285894 B1 IT 1285894B1 IT 96RM000626 A IT96RM000626 A IT 96RM000626A IT RM960626 A ITRM960626 A IT RM960626A IT 1285894 B1 IT1285894 B1 IT 1285894B1
Authority
IT
Italy
Prior art keywords
driving circuit
low voltage
line driving
flash eeprom
eeprom memories
Prior art date
Application number
IT96RM000626A
Other languages
English (en)
Italian (it)
Inventor
Stefano Menichelli
Tommaso Vali
Original Assignee
Texas Instruments Italia Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Italia Spa filed Critical Texas Instruments Italia Spa
Priority to IT96RM000626A priority Critical patent/IT1285894B1/it
Priority to EP97830445A priority patent/EP0829881B1/en
Priority to DE69720126T priority patent/DE69720126T2/de
Priority to SG1997003355A priority patent/SG67418A1/en
Priority to KR1019970047089A priority patent/KR100497688B1/ko
Priority to JP25109697A priority patent/JP4519953B2/ja
Publication of ITRM960626A1 publication Critical patent/ITRM960626A1/it
Application granted granted Critical
Publication of IT1285894B1 publication Critical patent/IT1285894B1/it
Priority to US09/368,703 priority patent/US6259631B1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Logic Circuits (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
IT96RM000626A 1996-09-13 1996-09-13 Circuito di pilotaggio di riga per memorie flash eeprom a bassa tensione. IT1285894B1 (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
IT96RM000626A IT1285894B1 (it) 1996-09-13 1996-09-13 Circuito di pilotaggio di riga per memorie flash eeprom a bassa tensione.
EP97830445A EP0829881B1 (en) 1996-09-13 1997-09-10 Wordline drive circuit for flash EEPROM memory
DE69720126T DE69720126T2 (de) 1996-09-13 1997-09-10 Wortleitungstreiberschaltung für Flash-EEPROM-Speicher
SG1997003355A SG67418A1 (en) 1996-09-13 1997-09-11 A row drive circuit for low voltage flash eeprom memories
KR1019970047089A KR100497688B1 (ko) 1996-09-13 1997-09-12 저전압플래시eeprom메모리용행구동회로
JP25109697A JP4519953B2 (ja) 1996-09-13 1997-09-16 メモリ回路用の電圧トランスレータ
US09/368,703 US6259631B1 (en) 1996-09-13 1999-08-05 Row drive circuit equipped with feedback transistors for low voltage flash EEPROM memories

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT96RM000626A IT1285894B1 (it) 1996-09-13 1996-09-13 Circuito di pilotaggio di riga per memorie flash eeprom a bassa tensione.

Publications (2)

Publication Number Publication Date
ITRM960626A1 ITRM960626A1 (it) 1998-03-13
IT1285894B1 true IT1285894B1 (it) 1998-06-24

Family

ID=11404419

Family Applications (1)

Application Number Title Priority Date Filing Date
IT96RM000626A IT1285894B1 (it) 1996-09-13 1996-09-13 Circuito di pilotaggio di riga per memorie flash eeprom a bassa tensione.

Country Status (6)

Country Link
EP (1) EP0829881B1 (enExample)
JP (1) JP4519953B2 (enExample)
KR (1) KR100497688B1 (enExample)
DE (1) DE69720126T2 (enExample)
IT (1) IT1285894B1 (enExample)
SG (1) SG67418A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3410084B2 (ja) 2001-09-20 2003-05-26 沖電気工業株式会社 電圧トランスレータ
JP3466593B2 (ja) * 2001-09-20 2003-11-10 沖電気工業株式会社 電圧トランスレータ回路
JP3532181B2 (ja) 2001-11-21 2004-05-31 沖電気工業株式会社 電圧トランスレータ
WO2010076833A1 (en) 2008-12-31 2010-07-08 Fabio Pellizzer Word-line driver including pull-up resistor and pull-down transistor
TWI502890B (zh) * 2009-07-02 2015-10-01 Advanced Risc Mach Ltd 電壓位準平移器與用於平移電壓位準之方法
US8908439B2 (en) * 2012-09-07 2014-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Adaptive word-line boost driver

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4823318A (en) * 1988-09-02 1989-04-18 Texas Instruments Incorporated Driving circuitry for EEPROM memory cell
EP0453812B1 (en) * 1990-04-23 1997-05-28 Texas Instruments Incorporated Worldline driver circuit for nonvolatile memory cell array
JPH06338193A (ja) * 1993-05-28 1994-12-06 Hitachi Ltd 不揮発性半導体記憶装置
JPH07235190A (ja) * 1994-02-24 1995-09-05 Sony Corp 半導体不揮発性記憶装置
KR0170293B1 (ko) * 1995-12-29 1999-03-30 김광호 이.이.피.롬 장치

Also Published As

Publication number Publication date
KR100497688B1 (ko) 2005-09-08
EP0829881A2 (en) 1998-03-18
DE69720126T2 (de) 2003-12-04
JP4519953B2 (ja) 2010-08-04
SG67418A1 (en) 1999-09-21
DE69720126D1 (de) 2003-04-30
JPH10149693A (ja) 1998-06-02
EP0829881A3 (en) 1999-07-07
EP0829881B1 (en) 2003-03-26
KR19980024604A (ko) 1998-07-06
ITRM960626A1 (it) 1998-03-13

Similar Documents

Publication Publication Date Title
ITMI972594A1 (it) Regolatore di tensione per circuiti di memoria a singola tensione di alimentazione, in particolare per memorie di tipo flash.
EP0784852A4 (en) HIGH SPEED, LOW VOLTAGE STORAGE
GB2347767B (en) Flash memory partitioning for read-while-write operation
IT1290168B1 (it) Pompa di carica a tensione negativa per memorie flash eeprom
EP0613151A3 (en) Semiconductor memory system with flash EEPROM.
IT1306963B1 (it) Circuito a compensazione capacitativa per la regolazione dellatensione di lettura di riga in memorie non-volatili
IL123687A (en) Multiple writes per a single erase for a nonvolatile memory
NO973074D0 (no) Hurtigminne for lyn-konfigurering
GB2348991B (en) Flash memory system
AU3895395A (en) Voltage supplies for flash memory
GB2320377B (en) A nonvolatile ferroelectric memory device
DE69526210D1 (de) Flash-speicher mit adaptiver abtastung
DE69614299D1 (de) Nichtflüchtige Halbleiterspeicheranordnung mit Block-Löschfunktion
DE69528329D1 (de) EEPROM-Speicherzelle
AU5779099A (en) Electrically erasable nonvolatile memory
AU1332097A (en) A negative voltage switch architecture for a nonvolatile memory
AU3083599A (en) Page mode erase in a flash memory array
DE69803163D1 (de) Hochspannungs-nmos-durchgangsgatter für flash-speicher mit hochspannungsgenerator
IT1285894B1 (it) Circuito di pilotaggio di riga per memorie flash eeprom a bassa tensione.
DE69903966D1 (de) Wortleitungstreiber für flash eeprom
AU6433099A (en) Nonvolatile memory
DE69531349D1 (de) Spannungsgenerator für nichtflüchtige elektrisch-programmierbare Speicherzellen
DE69632999D1 (de) Löschspannungs-Steuerschaltkreis für eine löschbare, nichtflüchtige Speicherzelle
ITRM960898A0 (it) Pompa di carica in cmos ad alta corrente, in particolare per memorie flash eeprom
GB2320810A8 (en) A flash memory array

Legal Events

Date Code Title Description
0001 Granted