KR100495651B1 - 하전입자선노광장치와 디바이스의 제조방법 및하전입자선응용장치 - Google Patents

하전입자선노광장치와 디바이스의 제조방법 및하전입자선응용장치 Download PDF

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Publication number
KR100495651B1
KR100495651B1 KR10-2002-0021943A KR20020021943A KR100495651B1 KR 100495651 B1 KR100495651 B1 KR 100495651B1 KR 20020021943 A KR20020021943 A KR 20020021943A KR 100495651 B1 KR100495651 B1 KR 100495651B1
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South Korea
Prior art keywords
charged particle
plane
optical system
particle beam
array
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Expired - Fee Related
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KR10-2002-0021943A
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English (en)
Korean (ko)
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KR20020082769A (ko
Inventor
무라키마사토
소다야스나리
하시모토신이치
Original Assignee
캐논 가부시끼가이샤
가부시끼가이샤 히다치 세이사꾸쇼
가부시키가이샤 어드밴티스트
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Publication of KR20020082769A publication Critical patent/KR20020082769A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H01J2237/0437—Semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR10-2002-0021943A 2001-04-23 2002-04-22 하전입자선노광장치와 디바이스의 제조방법 및하전입자선응용장치 Expired - Fee Related KR100495651B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001124758A JP4647820B2 (ja) 2001-04-23 2001-04-23 荷電粒子線描画装置、および、デバイスの製造方法
JPJP-P-2001-00124758 2001-04-23

Publications (2)

Publication Number Publication Date
KR20020082769A KR20020082769A (ko) 2002-10-31
KR100495651B1 true KR100495651B1 (ko) 2005-06-16

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KR10-2002-0021943A Expired - Fee Related KR100495651B1 (ko) 2001-04-23 2002-04-22 하전입자선노광장치와 디바이스의 제조방법 및하전입자선응용장치

Country Status (6)

Country Link
US (1) US6903353B2 (enExample)
EP (1) EP1253619B1 (enExample)
JP (1) JP4647820B2 (enExample)
KR (1) KR100495651B1 (enExample)
DE (1) DE60233994D1 (enExample)
TW (1) TW559883B (enExample)

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