KR100492135B1 - 페이스플레이트, 그 페이스플레이트를 포함하는 반응기 - Google Patents
페이스플레이트, 그 페이스플레이트를 포함하는 반응기 Download PDFInfo
- Publication number
- KR100492135B1 KR100492135B1 KR1019970053881A KR19970053881A KR100492135B1 KR 100492135 B1 KR100492135 B1 KR 100492135B1 KR 1019970053881 A KR1019970053881 A KR 1019970053881A KR 19970053881 A KR19970053881 A KR 19970053881A KR 100492135 B1 KR100492135 B1 KR 100492135B1
- Authority
- KR
- South Korea
- Prior art keywords
- faceplate
- showerhead
- grooves
- gas
- reactor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/735,386 | 1996-10-21 | ||
| US8/735,386 | 1996-10-21 | ||
| US08/735,386 US5882411A (en) | 1996-10-21 | 1996-10-21 | Faceplate thermal choke in a CVD plasma reactor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19980033001A KR19980033001A (ko) | 1998-07-25 |
| KR100492135B1 true KR100492135B1 (ko) | 2005-09-02 |
Family
ID=24955564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970053881A Expired - Fee Related KR100492135B1 (ko) | 1996-10-21 | 1997-10-21 | 페이스플레이트, 그 페이스플레이트를 포함하는 반응기 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5882411A (enExample) |
| JP (1) | JP4371442B2 (enExample) |
| KR (1) | KR100492135B1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210105139A (ko) | 2020-02-18 | 2021-08-26 | (주)포인트엔지니어링 | 가스 공급장치 및 이를 구비한 증착장치 |
| KR20220067696A (ko) | 2020-11-18 | 2022-05-25 | (주)포인트엔지니어링 | 가스 공급부재 및 이를 구비한 기판처리장치 |
Families Citing this family (105)
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| US6527865B1 (en) | 1997-09-11 | 2003-03-04 | Applied Materials, Inc. | Temperature controlled gas feedthrough |
| US6106625A (en) * | 1997-12-02 | 2000-08-22 | Applied Materials, Inc. | Reactor useful for chemical vapor deposition of titanium nitride |
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| US6050216A (en) * | 1998-08-21 | 2000-04-18 | M.E.C. Technology, Inc. | Showerhead electrode for plasma processing |
| US6170429B1 (en) | 1998-09-30 | 2001-01-09 | Lam Research Corporation | Chamber liner for semiconductor process chambers |
| TW514996B (en) * | 1999-12-10 | 2002-12-21 | Tokyo Electron Ltd | Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film |
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| US6772827B2 (en) | 2000-01-20 | 2004-08-10 | Applied Materials, Inc. | Suspended gas distribution manifold for plasma chamber |
| US6170432B1 (en) | 2000-01-24 | 2001-01-09 | M.E.C. Technology, Inc. | Showerhead electrode assembly for plasma processing |
| US6237528B1 (en) | 2000-01-24 | 2001-05-29 | M.E.C. Technology, Inc. | Showerhead electrode assembly for plasma processing |
| US6786935B1 (en) | 2000-03-10 | 2004-09-07 | Applied Materials, Inc. | Vacuum processing system for producing components |
| US6451390B1 (en) * | 2000-04-06 | 2002-09-17 | Applied Materials, Inc. | Deposition of TEOS oxide using pulsed RF plasma |
| TWI334888B (enExample) * | 2000-09-08 | 2010-12-21 | Tokyo Electron Ltd | |
| US6669783B2 (en) * | 2001-06-28 | 2003-12-30 | Lam Research Corporation | High temperature electrostatic chuck |
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| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| JP4121269B2 (ja) * | 2001-11-27 | 2008-07-23 | 日本エー・エス・エム株式会社 | セルフクリーニングを実行するプラズマcvd装置及び方法 |
| US6827815B2 (en) * | 2002-01-15 | 2004-12-07 | Applied Materials, Inc. | Showerhead assembly for a processing chamber |
| KR20030066118A (ko) * | 2002-02-04 | 2003-08-09 | 주성엔지니어링(주) | 열팽창에 의한 변형을 최소화할 수 있는 샤워헤드형가스공급장치 |
| US6972267B2 (en) * | 2002-03-04 | 2005-12-06 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
| US6902629B2 (en) * | 2002-04-12 | 2005-06-07 | Applied Materials, Inc. | Method for cleaning a process chamber |
| US7186385B2 (en) * | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
| WO2004015165A1 (en) * | 2002-08-08 | 2004-02-19 | Trikon Technologies Limited | Improvements to showerheads |
| US6946033B2 (en) * | 2002-09-16 | 2005-09-20 | Applied Materials Inc. | Heated gas distribution plate for a processing chamber |
| US20040052969A1 (en) * | 2002-09-16 | 2004-03-18 | Applied Materials, Inc. | Methods for operating a chemical vapor deposition chamber using a heated gas distribution plate |
| US7204912B2 (en) * | 2002-09-30 | 2007-04-17 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
| US7137353B2 (en) * | 2002-09-30 | 2006-11-21 | Tokyo Electron Limited | Method and apparatus for an improved deposition shield in a plasma processing system |
| US7147749B2 (en) * | 2002-09-30 | 2006-12-12 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system |
| US6798519B2 (en) * | 2002-09-30 | 2004-09-28 | Tokyo Electron Limited | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
| US7166200B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
| US6837966B2 (en) * | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
| US7166166B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
| EP1420080A3 (en) * | 2002-11-14 | 2005-11-09 | Applied Materials, Inc. | Apparatus and method for hybrid chemical deposition processes |
| US7780786B2 (en) * | 2002-11-28 | 2010-08-24 | Tokyo Electron Limited | Internal member of a plasma processing vessel |
| US7270713B2 (en) * | 2003-01-07 | 2007-09-18 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
| US20060254512A1 (en) * | 2003-02-28 | 2006-11-16 | Tokyo Electron Limited | Apparatus for attachment of semiconductor hardware |
| WO2004095530A2 (en) * | 2003-03-31 | 2004-11-04 | Tokyo Electron Limited | Adjoining adjacent coatings on an element |
| US6942753B2 (en) * | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
| KR100965758B1 (ko) * | 2003-05-22 | 2010-06-24 | 주성엔지니어링(주) | 액정표시장치용 플라즈마 강화 화학기상증착 장치의샤워헤드 어셈블리 |
| EP1629522A4 (en) * | 2003-05-30 | 2008-07-23 | Aviza Tech Inc | GAS DISTRIBUTION SYSTEM |
| US7048432B2 (en) * | 2003-06-19 | 2006-05-23 | Halliburton Energy Services, Inc. | Method and apparatus for hydrating a gel for use in a subterranean formation |
| US7645341B2 (en) * | 2003-12-23 | 2010-01-12 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
| JP4698251B2 (ja) * | 2004-02-24 | 2011-06-08 | アプライド マテリアルズ インコーポレイテッド | 可動又は柔軟なシャワーヘッド取り付け |
| US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
| US8317968B2 (en) * | 2004-04-30 | 2012-11-27 | Lam Research Corporation | Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing |
| US7712434B2 (en) * | 2004-04-30 | 2010-05-11 | Lam Research Corporation | Apparatus including showerhead electrode and heater for plasma processing |
| US7112541B2 (en) * | 2004-05-06 | 2006-09-26 | Applied Materials, Inc. | In-situ oxide capping after CVD low k deposition |
| US8328939B2 (en) * | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
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| US20050252449A1 (en) | 2004-05-12 | 2005-11-17 | Nguyen Son T | Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system |
| KR101063737B1 (ko) * | 2004-07-09 | 2011-09-08 | 주성엔지니어링(주) | 기판 제조장비의 샤워헤드 |
| US20060021703A1 (en) * | 2004-07-29 | 2006-02-02 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
| US7429410B2 (en) * | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
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| US7601242B2 (en) * | 2005-01-11 | 2009-10-13 | Tokyo Electron Limited | Plasma processing system and baffle assembly for use in plasma processing system |
| US7430986B2 (en) * | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
| US20060225654A1 (en) * | 2005-03-29 | 2006-10-12 | Fink Steven T | Disposable plasma reactor materials and methods |
| JP4746620B2 (ja) * | 2005-04-05 | 2011-08-10 | パナソニック株式会社 | プラズマ処理装置用のガスシャワープレート |
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| KR101519684B1 (ko) | 2007-09-25 | 2015-05-12 | 램 리써치 코포레이션 | 플라즈마 프로세싱 장치용 샤워헤드 전극 어셈블리를 위한 온도 제어 모듈 |
| US8673080B2 (en) | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
| US8343592B2 (en) * | 2007-12-25 | 2013-01-01 | Applied Materials, Inc. | Asymmetrical RF drive for electrode of plasma chamber |
| JP5039576B2 (ja) * | 2008-01-11 | 2012-10-03 | シャープ株式会社 | プラズマ処理装置 |
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| KR100970201B1 (ko) | 2008-03-17 | 2010-07-14 | 주식회사 아이피에스 | 진공처리장치 |
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| JP5707341B2 (ja) * | 2009-02-13 | 2015-04-30 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Rf電力をプラズマチャンバの内部に結合させるための装置 |
| MY165356A (en) | 2009-09-10 | 2018-03-21 | Lam Res Corp | Replaceable upper chamber parts of plasma processing apparatus |
| US9039864B2 (en) * | 2009-09-29 | 2015-05-26 | Applied Materials, Inc. | Off-center ground return for RF-powered showerhead |
| KR101249999B1 (ko) * | 2010-08-12 | 2013-04-03 | 주식회사 디엠에스 | 화학기상증착 장치 |
| US8573152B2 (en) * | 2010-09-03 | 2013-11-05 | Lam Research Corporation | Showerhead electrode |
| KR20120072563A (ko) * | 2010-12-24 | 2012-07-04 | 주식회사 원익아이피에스 | 진공처리장치 |
| KR101937115B1 (ko) | 2011-03-04 | 2019-01-09 | 노벨러스 시스템즈, 인코포레이티드 | 하이브리드 세라믹 샤워헤드 |
| US20120231181A1 (en) * | 2011-03-09 | 2012-09-13 | Applied Materials, Inc. | Insulation coverage of cvd electrode |
| TWI480417B (zh) | 2012-11-02 | 2015-04-11 | Ind Tech Res Inst | 具氣幕之氣體噴灑裝置及其薄膜沉積裝置 |
| CN103305907A (zh) * | 2013-06-14 | 2013-09-18 | 光垒光电科技(上海)有限公司 | 用于外延沉积的反应腔 |
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| US10741365B2 (en) | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
| US10378107B2 (en) | 2015-05-22 | 2019-08-13 | Lam Research Corporation | Low volume showerhead with faceplate holes for improved flow uniformity |
| US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
| US11004661B2 (en) * | 2015-09-04 | 2021-05-11 | Applied Materials, Inc. | Process chamber for cyclic and selective material removal and etching |
| JP6285411B2 (ja) * | 2015-12-25 | 2018-02-28 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
| DE202017105481U1 (de) * | 2017-09-11 | 2018-12-12 | Aixtron Se | Gaseinlassorgan für einen CVD- oder PVD-Reaktor |
| US10907252B2 (en) * | 2017-10-23 | 2021-02-02 | Applied Materials, Inc. | Horizontal heat choke faceplate design |
| US10889894B2 (en) * | 2018-08-06 | 2021-01-12 | Applied Materials, Inc. | Faceplate with embedded heater |
| JP2022545273A (ja) | 2019-08-23 | 2022-10-26 | ラム リサーチ コーポレーション | 温度制御型のシャンデリア型シャワーヘッド |
| CN119980191A (zh) | 2019-08-28 | 2025-05-13 | 朗姆研究公司 | 金属沉积 |
| US11810764B2 (en) | 2020-04-23 | 2023-11-07 | Applied Materials, Inc. | Faceplate with edge flow control |
| US11242600B2 (en) | 2020-06-17 | 2022-02-08 | Applied Materials, Inc. | High temperature face plate for deposition application |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5558717A (en) * | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
-
1996
- 1996-10-21 US US08/735,386 patent/US5882411A/en not_active Expired - Lifetime
-
1997
- 1997-10-21 JP JP28882097A patent/JP4371442B2/ja not_active Expired - Lifetime
- 1997-10-21 KR KR1019970053881A patent/KR100492135B1/ko not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5558717A (en) * | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210105139A (ko) | 2020-02-18 | 2021-08-26 | (주)포인트엔지니어링 | 가스 공급장치 및 이를 구비한 증착장치 |
| KR20220067696A (ko) | 2020-11-18 | 2022-05-25 | (주)포인트엔지니어링 | 가스 공급부재 및 이를 구비한 기판처리장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10144614A (ja) | 1998-05-29 |
| US5882411A (en) | 1999-03-16 |
| JP4371442B2 (ja) | 2009-11-25 |
| KR19980033001A (ko) | 1998-07-25 |
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