JP4371442B2 - 反応チャンバにガスを供給する為の面板、および、反応チャンバ - Google Patents
反応チャンバにガスを供給する為の面板、および、反応チャンバ Download PDFInfo
- Publication number
- JP4371442B2 JP4371442B2 JP28882097A JP28882097A JP4371442B2 JP 4371442 B2 JP4371442 B2 JP 4371442B2 JP 28882097 A JP28882097 A JP 28882097A JP 28882097 A JP28882097 A JP 28882097A JP 4371442 B2 JP4371442 B2 JP 4371442B2
- Authority
- JP
- Japan
- Prior art keywords
- face plate
- reaction chamber
- shower head
- wall
- flexible wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/735386 | 1996-10-21 | ||
| US08/735,386 US5882411A (en) | 1996-10-21 | 1996-10-21 | Faceplate thermal choke in a CVD plasma reactor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10144614A JPH10144614A (ja) | 1998-05-29 |
| JPH10144614A5 JPH10144614A5 (enExample) | 2005-06-30 |
| JP4371442B2 true JP4371442B2 (ja) | 2009-11-25 |
Family
ID=24955564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28882097A Expired - Lifetime JP4371442B2 (ja) | 1996-10-21 | 1997-10-21 | 反応チャンバにガスを供給する為の面板、および、反応チャンバ |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5882411A (enExample) |
| JP (1) | JP4371442B2 (enExample) |
| KR (1) | KR100492135B1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012086879A1 (ko) * | 2010-12-24 | 2012-06-28 | 주식회사 원익아이피에스 | 진공처리장치 |
Families Citing this family (106)
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| KR20010062209A (ko) * | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
| US6477980B1 (en) | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
| US6772827B2 (en) | 2000-01-20 | 2004-08-10 | Applied Materials, Inc. | Suspended gas distribution manifold for plasma chamber |
| US6237528B1 (en) | 2000-01-24 | 2001-05-29 | M.E.C. Technology, Inc. | Showerhead electrode assembly for plasma processing |
| US6170432B1 (en) | 2000-01-24 | 2001-01-09 | M.E.C. Technology, Inc. | Showerhead electrode assembly for plasma processing |
| US6786935B1 (en) * | 2000-03-10 | 2004-09-07 | Applied Materials, Inc. | Vacuum processing system for producing components |
| US6451390B1 (en) * | 2000-04-06 | 2002-09-17 | Applied Materials, Inc. | Deposition of TEOS oxide using pulsed RF plasma |
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| JP4121269B2 (ja) * | 2001-11-27 | 2008-07-23 | 日本エー・エス・エム株式会社 | セルフクリーニングを実行するプラズマcvd装置及び方法 |
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| KR20030066118A (ko) * | 2002-02-04 | 2003-08-09 | 주성엔지니어링(주) | 열팽창에 의한 변형을 최소화할 수 있는 샤워헤드형가스공급장치 |
| US6972267B2 (en) * | 2002-03-04 | 2005-12-06 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
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| US7186385B2 (en) * | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
| WO2004015165A1 (en) * | 2002-08-08 | 2004-02-19 | Trikon Technologies Limited | Improvements to showerheads |
| US20040052969A1 (en) * | 2002-09-16 | 2004-03-18 | Applied Materials, Inc. | Methods for operating a chemical vapor deposition chamber using a heated gas distribution plate |
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| US7204912B2 (en) * | 2002-09-30 | 2007-04-17 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
| US7137353B2 (en) * | 2002-09-30 | 2006-11-21 | Tokyo Electron Limited | Method and apparatus for an improved deposition shield in a plasma processing system |
| US7166166B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
| US7147749B2 (en) * | 2002-09-30 | 2006-12-12 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system |
| US6798519B2 (en) * | 2002-09-30 | 2004-09-28 | Tokyo Electron Limited | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
| US6837966B2 (en) * | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
| US7166200B2 (en) * | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
| EP1420080A3 (en) * | 2002-11-14 | 2005-11-09 | Applied Materials, Inc. | Apparatus and method for hybrid chemical deposition processes |
| KR100772740B1 (ko) | 2002-11-28 | 2007-11-01 | 동경 엘렉트론 주식회사 | 플라즈마 처리 용기 내부재 |
| US7270713B2 (en) * | 2003-01-07 | 2007-09-18 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
| US20060254512A1 (en) * | 2003-02-28 | 2006-11-16 | Tokyo Electron Limited | Apparatus for attachment of semiconductor hardware |
| CN100495413C (zh) * | 2003-03-31 | 2009-06-03 | 东京毅力科创株式会社 | 用于邻接在处理元件上的相邻覆层的方法 |
| US6942753B2 (en) * | 2003-04-16 | 2005-09-13 | Applied Materials, Inc. | Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition |
| KR100965758B1 (ko) * | 2003-05-22 | 2010-06-24 | 주성엔지니어링(주) | 액정표시장치용 플라즈마 강화 화학기상증착 장치의샤워헤드 어셈블리 |
| CN101068950A (zh) * | 2003-05-30 | 2007-11-07 | 阿维扎技术公司 | 气体分配系统 |
| US7048432B2 (en) * | 2003-06-19 | 2006-05-23 | Halliburton Energy Services, Inc. | Method and apparatus for hydrating a gel for use in a subterranean formation |
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| JP4698251B2 (ja) * | 2004-02-24 | 2011-06-08 | アプライド マテリアルズ インコーポレイテッド | 可動又は柔軟なシャワーヘッド取り付け |
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| KR200476124Y1 (ko) * | 2009-09-29 | 2015-01-30 | 어플라이드 머티어리얼스, 인코포레이티드 | Rf전력공급 샤워헤드를 위한 편심 접지 복귀 |
| KR101249999B1 (ko) * | 2010-08-12 | 2013-04-03 | 주식회사 디엠에스 | 화학기상증착 장치 |
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| TWI480417B (zh) | 2012-11-02 | 2015-04-11 | Ind Tech Res Inst | 具氣幕之氣體噴灑裝置及其薄膜沉積裝置 |
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| TW201518538A (zh) * | 2013-11-11 | 2015-05-16 | Applied Materials Inc | 像素化冷卻溫度控制的基板支撐組件 |
| US10741365B2 (en) | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
| US10378107B2 (en) | 2015-05-22 | 2019-08-13 | Lam Research Corporation | Low volume showerhead with faceplate holes for improved flow uniformity |
| US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
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| JP6285411B2 (ja) * | 2015-12-25 | 2018-02-28 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
| DE202017105481U1 (de) * | 2017-09-11 | 2018-12-12 | Aixtron Se | Gaseinlassorgan für einen CVD- oder PVD-Reaktor |
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| KR20210105139A (ko) | 2020-02-18 | 2021-08-26 | (주)포인트엔지니어링 | 가스 공급장치 및 이를 구비한 증착장치 |
| US11810764B2 (en) * | 2020-04-23 | 2023-11-07 | Applied Materials, Inc. | Faceplate with edge flow control |
| US11242600B2 (en) | 2020-06-17 | 2022-02-08 | Applied Materials, Inc. | High temperature face plate for deposition application |
| KR20220067696A (ko) | 2020-11-18 | 2022-05-25 | (주)포인트엔지니어링 | 가스 공급부재 및 이를 구비한 기판처리장치 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5558717A (en) * | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
-
1996
- 1996-10-21 US US08/735,386 patent/US5882411A/en not_active Expired - Lifetime
-
1997
- 1997-10-21 JP JP28882097A patent/JP4371442B2/ja not_active Expired - Lifetime
- 1997-10-21 KR KR1019970053881A patent/KR100492135B1/ko not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012086879A1 (ko) * | 2010-12-24 | 2012-06-28 | 주식회사 원익아이피에스 | 진공처리장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100492135B1 (ko) | 2005-09-02 |
| JPH10144614A (ja) | 1998-05-29 |
| US5882411A (en) | 1999-03-16 |
| KR19980033001A (ko) | 1998-07-25 |
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