JPH10144614A5 - - Google Patents

Info

Publication number
JPH10144614A5
JPH10144614A5 JP1997288820A JP28882097A JPH10144614A5 JP H10144614 A5 JPH10144614 A5 JP H10144614A5 JP 1997288820 A JP1997288820 A JP 1997288820A JP 28882097 A JP28882097 A JP 28882097A JP H10144614 A5 JPH10144614 A5 JP H10144614A5
Authority
JP
Japan
Prior art keywords
showerhead
wall
reaction chamber
faceplate
flange
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997288820A
Other languages
English (en)
Japanese (ja)
Other versions
JP4371442B2 (ja
JPH10144614A (ja
Filing date
Publication date
Priority claimed from US08/735,386 external-priority patent/US5882411A/en
Application filed filed Critical
Publication of JPH10144614A publication Critical patent/JPH10144614A/ja
Publication of JPH10144614A5 publication Critical patent/JPH10144614A5/ja
Application granted granted Critical
Publication of JP4371442B2 publication Critical patent/JP4371442B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP28882097A 1996-10-21 1997-10-21 反応チャンバにガスを供給する為の面板、および、反応チャンバ Expired - Lifetime JP4371442B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/735,386 US5882411A (en) 1996-10-21 1996-10-21 Faceplate thermal choke in a CVD plasma reactor
US08/735386 1996-10-21

Publications (3)

Publication Number Publication Date
JPH10144614A JPH10144614A (ja) 1998-05-29
JPH10144614A5 true JPH10144614A5 (enExample) 2005-06-30
JP4371442B2 JP4371442B2 (ja) 2009-11-25

Family

ID=24955564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28882097A Expired - Lifetime JP4371442B2 (ja) 1996-10-21 1997-10-21 反応チャンバにガスを供給する為の面板、および、反応チャンバ

Country Status (3)

Country Link
US (1) US5882411A (enExample)
JP (1) JP4371442B2 (enExample)
KR (1) KR100492135B1 (enExample)

Families Citing this family (108)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5846332A (en) * 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
US6527865B1 (en) 1997-09-11 2003-03-04 Applied Materials, Inc. Temperature controlled gas feedthrough
US6258170B1 (en) 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
US6079356A (en) * 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6106625A (en) * 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6050216A (en) * 1998-08-21 2000-04-18 M.E.C. Technology, Inc. Showerhead electrode for plasma processing
US6170429B1 (en) 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
KR20010062209A (ko) * 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
US6772827B2 (en) 2000-01-20 2004-08-10 Applied Materials, Inc. Suspended gas distribution manifold for plasma chamber
US6477980B1 (en) * 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6237528B1 (en) 2000-01-24 2001-05-29 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
US6170432B1 (en) 2000-01-24 2001-01-09 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
US6786935B1 (en) 2000-03-10 2004-09-07 Applied Materials, Inc. Vacuum processing system for producing components
US6451390B1 (en) * 2000-04-06 2002-09-17 Applied Materials, Inc. Deposition of TEOS oxide using pulsed RF plasma
TWI303084B (en) * 2000-09-08 2008-11-11 Tokyo Electron Ltd Shower head structure, film forming method, and gas processing apparauts
US6669783B2 (en) * 2001-06-28 2003-12-30 Lam Research Corporation High temperature electrostatic chuck
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7204886B2 (en) * 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
JP4121269B2 (ja) * 2001-11-27 2008-07-23 日本エー・エス・エム株式会社 セルフクリーニングを実行するプラズマｃｖｄ装置及び方法
US6827815B2 (en) * 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
KR20030066118A (ko) * 2002-02-04 2003-08-09 주성엔지니어링(주) 열팽창에 의한 변형을 최소화할 수 있는 샤워헤드형가스공급장치
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US6902629B2 (en) * 2002-04-12 2005-06-07 Applied Materials, Inc. Method for cleaning a process chamber
US7186385B2 (en) * 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
GB2406583B (en) * 2002-08-08 2005-12-21 Trikon Technologies Ltd Improvements to showerheads
US6946033B2 (en) * 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
US20040052969A1 (en) * 2002-09-16 2004-03-18 Applied Materials, Inc. Methods for operating a chemical vapor deposition chamber using a heated gas distribution plate
US6798519B2 (en) * 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7204912B2 (en) * 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7137353B2 (en) * 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US7166200B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US7780786B2 (en) 2002-11-28 2010-08-24 Tokyo Electron Limited Internal member of a plasma processing vessel
US7270713B2 (en) * 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
US20060254512A1 (en) * 2003-02-28 2006-11-16 Tokyo Electron Limited Apparatus for attachment of semiconductor hardware
CN100495413C (zh) * 2003-03-31 2009-06-03 东京毅力科创株式会社 用于邻接在处理元件上的相邻覆层的方法
US6942753B2 (en) * 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
KR100965758B1 (ko) * 2003-05-22 2010-06-24 주성엔지니어링(주) 액정표시장치용 플라즈마 강화 화학기상증착 장치의샤워헤드 어셈블리
JP2007525822A (ja) * 2003-05-30 2007-09-06 アヴィザ テクノロジー インコーポレイテッド ガス分配システム
US7048432B2 (en) * 2003-06-19 2006-05-23 Halliburton Energy Services, Inc. Method and apparatus for hydrating a gel for use in a subterranean formation
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
JP4698251B2 (ja) * 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US8083853B2 (en) * 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US8317968B2 (en) 2004-04-30 2012-11-27 Lam Research Corporation Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing
US7112541B2 (en) * 2004-05-06 2006-09-26 Applied Materials, Inc. In-situ oxide capping after CVD low k deposition
US8074599B2 (en) * 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8328939B2 (en) * 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
KR101063737B1 (ko) * 2004-07-09 2011-09-08 주성엔지니어링(주) 기판 제조장비의 샤워헤드
US20060021703A1 (en) * 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US7552521B2 (en) * 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) * 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
US7430986B2 (en) * 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
US20060225654A1 (en) * 2005-03-29 2006-10-12 Fink Steven T Disposable plasma reactor materials and methods
KR101198428B1 (ko) * 2005-04-05 2012-11-06 파나소닉 주식회사 플라즈마 처리 장치용 가스 샤워 플레이트
US20060266288A1 (en) * 2005-05-27 2006-11-30 Applied Materials, Inc. High plasma utilization for remote plasma clean
US7273823B2 (en) * 2005-06-03 2007-09-25 Applied Materials, Inc. Situ oxide cap layer development
KR100689847B1 (ko) 2005-07-15 2007-03-08 삼성전자주식회사 화학기상증착장치
US20070044714A1 (en) * 2005-08-31 2007-03-01 Applied Materials, Inc. Method and apparatus for maintaining a cross sectional shape of a diffuser during processing
US7641762B2 (en) * 2005-09-02 2010-01-05 Applied Materials, Inc. Gas sealing skirt for suspended showerhead in process chamber
US20070119371A1 (en) * 2005-11-04 2007-05-31 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
KR100711184B1 (ko) * 2006-03-27 2007-04-24 주식회사 마이크로텍 샤워헤드 브래킷
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US7776178B2 (en) * 2006-10-25 2010-08-17 Applied Materials, Inc. Suspension for showerhead in process chamber
US7775508B2 (en) * 2006-10-31 2010-08-17 Applied Materials, Inc. Ampoule for liquid draw and vapor draw with a continuous level sensor
US20080206987A1 (en) * 2007-01-29 2008-08-28 Gelatos Avgerinos V Process for tungsten nitride deposition by a temperature controlled lid assembly
ES2331489T3 (es) * 2007-03-05 2010-01-05 Applied Materials, Inc. Instalacion de revestimiento y sistema de conduccion de gas.
US8069817B2 (en) * 2007-03-30 2011-12-06 Lam Research Corporation Showerhead electrodes and showerhead electrode assemblies having low-particle performance for semiconductor material processing apparatuses
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
JP5194125B2 (ja) 2007-09-25 2013-05-08 ラム リサーチ コーポレーション シャワーヘッド電極アセンブリ用の温度制御モジュール、シャワーヘッド電極アセンブリ及びシャワーヘッド電極アセンブリの上部電極の温度を制御する方法
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
WO2009082753A2 (en) * 2007-12-25 2009-07-02 Applied Materials, Inc. Asymmetrical rf drive for electrode of plasma chamber
JP5039576B2 (ja) * 2008-01-11 2012-10-03 シャープ株式会社 プラズマ処理装置
CN101933402B (zh) * 2008-01-31 2013-03-27 应用材料公司 用于等离子体腔室的电极的多相射频电源
KR100970201B1 (ko) * 2008-03-17 2010-07-14 주식회사 아이피에스 진공처리장치
US8146896B2 (en) * 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US8992723B2 (en) * 2009-02-13 2015-03-31 Applied Material, Inc. RF bus and RF return bus for plasma chamber electrode
MY179709A (en) * 2009-09-10 2020-11-11 Lam Res Corp Replaceable upper chamber parts of plasma processing apparatus
US9039864B2 (en) * 2009-09-29 2015-05-26 Applied Materials, Inc. Off-center ground return for RF-powered showerhead
KR101249999B1 (ko) * 2010-08-12 2013-04-03 주식회사 디엠에스 화학기상증착 장치
US8573152B2 (en) * 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
KR20120072563A (ko) * 2010-12-24 2012-07-04 주식회사 원익아이피에스 진공처리장치
SG192967A1 (en) 2011-03-04 2013-09-30 Novellus Systems Inc Hybrid ceramic showerhead
US20120231181A1 (en) * 2011-03-09 2012-09-13 Applied Materials, Inc. Insulation coverage of cvd electrode
TWI480417B (zh) 2012-11-02 2015-04-11 Ind Tech Res Inst 具氣幕之氣體噴灑裝置及其薄膜沉積裝置
CN103305907A (zh) * 2013-06-14 2013-09-18 光垒光电科技（上海）有限公司 用于外延沉积的反应腔
TW201518538A (zh) * 2013-11-11 2015-05-16 應用材料股份有限公司 像素化冷卻溫度控制的基板支撐組件
US10741365B2 (en) 2014-05-05 2020-08-11 Lam Research Corporation Low volume showerhead with porous baffle
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US11004661B2 (en) * 2015-09-04 2021-05-11 Applied Materials, Inc. Process chamber for cyclic and selective material removal and etching
JP6285411B2 (ja) * 2015-12-25 2018-02-28 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
DE202017105481U1 (de) * 2017-09-11 2018-12-12 Aixtron Se Gaseinlassorgan für einen CVD- oder PVD-Reaktor
US10907252B2 (en) * 2017-10-23 2021-02-02 Applied Materials, Inc. Horizontal heat choke faceplate design
US10889894B2 (en) 2018-08-06 2021-01-12 Applied Materials, Inc. Faceplate with embedded heater
KR102944722B1 (ko) 2019-08-23 2026-03-26 램 리써치 코포레이션 열 제어된 (thermally controlled) 샹들리에 샤워헤드
CN119980191A (zh) 2019-08-28 2025-05-13 朗姆研究公司 金属沉积
KR20210105139A (ko) 2020-02-18 2021-08-26 (주)포인트엔지니어링 가스 공급장치 및 이를 구비한 증착장치
US11810764B2 (en) 2020-04-23 2023-11-07 Applied Materials, Inc. Faceplate with edge flow control
US11242600B2 (en) 2020-06-17 2022-02-08 Applied Materials, Inc. High temperature face plate for deposition application
KR20220067696A (ko) 2020-11-18 2022-05-25 (주)포인트엔지니어링 가스 공급부재 및 이를 구비한 기판처리장치
US20260015724A1 (en) * 2024-07-10 2026-01-15 Applied Materials, Inc. Thin faceplate design for use in a processing chamber

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber

Similar Documents

Publication Publication Date Title
JP2010514160A5 (enExample)
USD496008S1 (en) Exhaust ring for manufacturing semiconductors
WO2003015133A3 (en) Showerhead electrode design for semiconductor processing reactor
CA2323255A1 (en) Gas shower unit for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus
TW373228B (en) Boron carbide parts and coatings in a plasma reactor
WO1999023691A3 (en) Improved low mass wafer support system
EP0959150A3 (en) Apparatus for depositing thin films
DE60136593D1 (de) Reaktor für die Abscheidung eines dünnen Films
CA2394592A1 (en) Intumescent floor opening frame
ATE304279T1 (de) Keramischer heizer.
TW200504800A (en) Showerhead assembly and apparatus for manufacturing semiconductor device having the same
JP3892958B2 (ja) ガス容器用の加熱装置
JP2001323376A5 (enExample)
JP2003163201A5 (enExample)
JP2022523541A5 (enExample)
JP2003188078A5 (enExample)
EP1308989A3 (en) Improved low mass wafer support system
JPH0187152U (enExample)
US20250316456A1 (en) Plasma treatment device, shower head and manufacturing method therefor
JP3221519B2 (ja) めっき装置
JPH0189957U (enExample)
JP2019073744A (ja) 防着板、成膜装置及び防着板の製造方法
JPH09219375A5 (ja) ヒータ台座及び半導体製造装置
JPS57160570A (en) Sliding nozzle device having gas blowing part in anticipated negative pressure or vortex generating zone
JPS6273038A (ja) 外装パネルの冷却構造