KR100417451B1 - 판독전용메모리셀구조를제조하기위한방법 - Google Patents

판독전용메모리셀구조를제조하기위한방법 Download PDF

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Publication number
KR100417451B1
KR100417451B1 KR1019970709885A KR19970709885A KR100417451B1 KR 100417451 B1 KR100417451 B1 KR 100417451B1 KR 1019970709885 A KR1019970709885 A KR 1019970709885A KR 19970709885 A KR19970709885 A KR 19970709885A KR 100417451 B1 KR100417451 B1 KR 100417451B1
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South Korea
Prior art keywords
doped
trench
mask
strip
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019970709885A
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English (en)
Korean (ko)
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KR19990028565A (ko
Inventor
프란츠 호프만
볼프강 뢰스너
볼프강 크라우트슈나이더
로타르 리슈
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지멘스 악티엔게젤샤프트
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Application granted granted Critical
Publication of KR100417451B1 publication Critical patent/KR100417451B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1019970709885A 1995-07-05 1996-06-25 판독전용메모리셀구조를제조하기위한방법 Expired - Fee Related KR100417451B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19524478A DE19524478C2 (de) 1995-07-05 1995-07-05 Verfahren zur Herstellung einer Festwertspeicherzellenanordnung
DE19524478.8 1995-07-05

Publications (2)

Publication Number Publication Date
KR19990028565A KR19990028565A (ko) 1999-04-15
KR100417451B1 true KR100417451B1 (ko) 2004-03-19

Family

ID=7766070

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970709885A Expired - Fee Related KR100417451B1 (ko) 1995-07-05 1996-06-25 판독전용메모리셀구조를제조하기위한방법

Country Status (7)

Country Link
US (1) US5998261A (enExample)
EP (1) EP0836747B1 (enExample)
JP (1) JP3615765B2 (enExample)
KR (1) KR100417451B1 (enExample)
DE (2) DE19524478C2 (enExample)
IN (1) IN189218B (enExample)
WO (1) WO1997002599A1 (enExample)

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EP0924767B1 (de) * 1997-12-22 2011-05-11 Infineon Technologies AG EEPROM-Anordnung und Verfahren zu deren Herstellung
DE19808182C1 (de) * 1998-02-26 1999-08-12 Siemens Ag Elektrisch programmierbare Speicherzellenanordnung und ein Verfahren zu deren Herstellung
US6087222A (en) * 1998-03-05 2000-07-11 Taiwan Semiconductor Manufacturing Company Method of manufacture of vertical split gate flash memory device
DE19820651B4 (de) * 1998-05-08 2007-04-12 Kabelschlepp Gmbh Leitungsführungsanordnung mit einer zugentlastenden Befestigung wenigstens einer in der Leitungsführungsanordnung geführten Leitung
US6204123B1 (en) * 1998-10-30 2001-03-20 Sony Corporation Vertical floating gate transistor with epitaxial channel
US6358790B1 (en) * 1999-01-13 2002-03-19 Agere Systems Guardian Corp. Method of making a capacitor
DE19929233C1 (de) * 1999-06-25 2001-02-01 Siemens Ag Speicherzellenanordnung mit auf einer Grabenseitenwand angeordnetem Floating-Gate und Herstellungsverfahren
US6303436B1 (en) * 1999-09-21 2001-10-16 Mosel Vitelic, Inc. Method for fabricating a type of trench mask ROM cell
US6303439B1 (en) * 1999-11-24 2001-10-16 United Microelectronics Corp. Fabrication method for a two-bit flash memory cell
US6306708B1 (en) * 2000-02-02 2001-10-23 United Microelectronics Corp. Fabrication method for an electrically erasable programmable read only memory
JP3679970B2 (ja) * 2000-03-28 2005-08-03 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
DE10041749A1 (de) 2000-08-27 2002-03-14 Infineon Technologies Ag Vertikale nichtflüchtige Halbleiter-Speicherzelle sowie Verfahren zu deren Herstellung
US6458657B1 (en) * 2000-09-25 2002-10-01 Macronix International Co., Ltd. Method of fabricating gate
US6759707B2 (en) * 2001-03-08 2004-07-06 Micron Technology, Inc. 2F2 memory device system
US6599813B2 (en) * 2001-06-29 2003-07-29 International Business Machines Corporation Method of forming shallow trench isolation for thin silicon-on-insulator substrates
US6541815B1 (en) * 2001-10-11 2003-04-01 International Business Machines Corporation High-density dual-cell flash memory structure
US6952033B2 (en) * 2002-03-20 2005-10-04 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with buried bit-line and raised source line
US6917069B2 (en) * 2001-10-17 2005-07-12 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with buried bit-line and vertical word line transistor
US6531733B1 (en) * 2001-12-17 2003-03-11 Windbond Electronics Corporation Structure of flash memory cell and method for manufacturing the same
TW564552B (en) * 2002-10-21 2003-12-01 Nanya Technology Corp A trench type stacked gate flash memory and the method to fabricate the same
TW583755B (en) * 2002-11-18 2004-04-11 Nanya Technology Corp Method for fabricating a vertical nitride read-only memory (NROM) cell
JP4042107B2 (ja) * 2003-02-14 2008-02-06 富士電機ホールディングス株式会社 磁気転写用マスタディスクの製造方法
US6936883B2 (en) * 2003-04-07 2005-08-30 Silicon Storage Technology, Inc. Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation
TW588438B (en) * 2003-08-08 2004-05-21 Nanya Technology Corp Multi-bit vertical memory cell and method of fabricating the same
US6933557B2 (en) * 2003-08-11 2005-08-23 Atmel Corporation Fowler-Nordheim block alterable EEPROM memory cell
KR100526891B1 (ko) * 2004-02-25 2005-11-09 삼성전자주식회사 반도체 소자에서의 버티컬 트랜지스터 구조 및 그에 따른형성방법
TWI231960B (en) * 2004-05-31 2005-05-01 Mosel Vitelic Inc Method of forming films in the trench
KR100668222B1 (ko) * 2005-06-13 2007-01-11 동부일렉트로닉스 주식회사 플래시 메모리 소자의 적층 게이트 구조 및 그 형성 방법
US7859026B2 (en) * 2006-03-16 2010-12-28 Spansion Llc Vertical semiconductor device
US7646054B2 (en) * 2006-09-19 2010-01-12 Sandisk Corporation Array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
JP4903873B2 (ja) * 2006-09-19 2012-03-28 サンディスク コーポレイション 基板トレンチ内にスペーサから形成されたフローティングゲートを有する不揮発性メモリセルアレイおよびその作製方法
US7696044B2 (en) * 2006-09-19 2010-04-13 Sandisk Corporation Method of making an array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
US7800161B2 (en) * 2006-12-21 2010-09-21 Sandisk Corporation Flash NAND memory cell array with charge storage elements positioned in trenches
US7642160B2 (en) * 2006-12-21 2010-01-05 Sandisk Corporation Method of forming a flash NAND memory cell array with charge storage elements positioned in trenches
US20080164004A1 (en) * 2007-01-08 2008-07-10 Anastasia Kolesnichenko Method and system of electromagnetic stirring for continuous casting of medium and high carbon steels
US9461182B2 (en) * 2007-05-07 2016-10-04 Infineon Technologies Ag Memory cell
US10522549B2 (en) * 2018-02-17 2019-12-31 Varian Semiconductor Equipment Associates, Inc. Uniform gate dielectric for DRAM device
TWI683418B (zh) * 2018-06-26 2020-01-21 華邦電子股份有限公司 動態隨機存取記憶體及其製造、寫入與讀取方法
US20250183035A1 (en) * 2023-12-05 2025-06-05 Semiconductor Components Industries, Llc Methods for manufacturing power semiconductor devices and power semicondudctor structures

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JPS6240774A (ja) * 1985-08-16 1987-02-21 Nippon Denso Co Ltd 不揮発性半導体記憶装置
JPS6272170A (ja) * 1985-09-26 1987-04-02 Toshiba Corp 半導体装置
JPS6286866A (ja) * 1985-10-14 1987-04-21 Nippon Denso Co Ltd 不揮発性半導体記憶装置
JPH07120717B2 (ja) * 1986-05-19 1995-12-20 日本電気株式会社 半導体記憶装置の製造方法
JPS6378573A (ja) * 1986-09-22 1988-04-08 Hitachi Ltd 半導体装置
JPS63102372A (ja) * 1986-10-20 1988-05-07 Fujitsu Ltd Ｅｅｐｒｏｍの製造方法
JPH01150364A (ja) * 1987-12-07 1989-06-13 Sony Corp メモリ装置の製法
JPH031574A (ja) * 1989-05-29 1991-01-08 Hitachi Ltd 不揮発性半導体記憶装置およびその製造方法
JPH07105453B2 (ja) * 1989-07-13 1995-11-13 株式会社東芝 半導体記憶装置のセル構造
US5180680A (en) * 1991-05-17 1993-01-19 United Microelectronics Corporation Method of fabricating electrically erasable read only memory cell
JPH0567791A (ja) * 1991-06-20 1993-03-19 Mitsubishi Electric Corp 電気的に書込および消去可能な半導体記憶装置およびその製造方法
US5414287A (en) * 1994-04-25 1995-05-09 United Microelectronics Corporation Process for high density split-gate memory cell for flash or EPROM
US5554550A (en) * 1994-09-14 1996-09-10 United Microelectronics Corporation Method of fabricating electrically eraseable read only memory cell having a trench

Also Published As

Publication number Publication date
JPH11508734A (ja) 1999-07-27
WO1997002599A1 (de) 1997-01-23
KR19990028565A (ko) 1999-04-15
JP3615765B2 (ja) 2005-02-02
IN189218B (enExample) 2003-01-04
EP0836747B1 (de) 2001-09-19
DE19524478C2 (de) 2002-03-14
DE59607727D1 (de) 2001-10-25
EP0836747A1 (de) 1998-04-22
DE19524478A1 (de) 1997-01-09
US5998261A (en) 1999-12-07

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