KR100417096B1 - 반도체 레이저 장치 및 그 제조방법 - Google Patents

반도체 레이저 장치 및 그 제조방법 Download PDF

Info

Publication number
KR100417096B1
KR100417096B1 KR10-2001-0013555A KR20010013555A KR100417096B1 KR 100417096 B1 KR100417096 B1 KR 100417096B1 KR 20010013555 A KR20010013555 A KR 20010013555A KR 100417096 B1 KR100417096 B1 KR 100417096B1
Authority
KR
South Korea
Prior art keywords
layer
current block
cladding layer
active layer
conductivity type
Prior art date
Application number
KR10-2001-0013555A
Other languages
English (en)
Korean (ko)
Other versions
KR20020007972A (ko
Inventor
카와즈젬페이
미야시타모토하루
시마아키히로
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20020007972A publication Critical patent/KR20020007972A/ko
Application granted granted Critical
Publication of KR100417096B1 publication Critical patent/KR100417096B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR10-2001-0013555A 2000-07-18 2001-03-16 반도체 레이저 장치 및 그 제조방법 KR100417096B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000217851A JP2002033553A (ja) 2000-07-18 2000-07-18 半導体レーザ装置及びその製造方法
JP2000-217851 2000-07-18

Publications (2)

Publication Number Publication Date
KR20020007972A KR20020007972A (ko) 2002-01-29
KR100417096B1 true KR100417096B1 (ko) 2004-02-05

Family

ID=18712903

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0013555A KR100417096B1 (ko) 2000-07-18 2001-03-16 반도체 레이저 장치 및 그 제조방법

Country Status (3)

Country Link
JP (1) JP2002033553A (ja)
KR (1) KR100417096B1 (ja)
TW (1) TW490900B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3873909B2 (ja) 2003-02-28 2007-01-31 住友電気工業株式会社 ファイバグレーティングレーザモジュール及び光信号を発生する方法
JP3729270B2 (ja) 2004-01-08 2005-12-21 セイコーエプソン株式会社 光素子およびその製造方法
JP2006120668A (ja) * 2004-10-19 2006-05-11 Mitsubishi Electric Corp 半導体レーザ
US7492803B2 (en) 2005-06-10 2009-02-17 Hewlett-Packard Development Company, L.P. Fiber-coupled single photon source
JP2008103772A (ja) * 2008-01-17 2008-05-01 Matsushita Electric Ind Co Ltd 半導体レーザ装置
CN111316515B (zh) * 2018-03-13 2023-01-17 株式会社藤仓 半导体光元件、半导体光元件形成用构造体以及使用其的半导体光元件的制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62186582A (ja) * 1986-02-13 1987-08-14 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
JP3027664B2 (ja) * 1992-12-18 2000-04-04 シャープ株式会社 半導体レーザ素子
JP3211594B2 (ja) * 1994-12-05 2001-09-25 住友電気工業株式会社 化合物半導体結晶基板
JPH10200201A (ja) * 1996-11-18 1998-07-31 Mitsubishi Chem Corp 半導体レーザ
JP3652072B2 (ja) * 1997-07-30 2005-05-25 シャープ株式会社 半導体レーザ素子
JP3521793B2 (ja) * 1999-03-03 2004-04-19 松下電器産業株式会社 半導体レーザの製造方法
JP2001189528A (ja) * 1999-12-28 2001-07-10 Sanyo Electric Co Ltd 半導体レーザ素子

Also Published As

Publication number Publication date
TW490900B (en) 2002-06-11
JP2002033553A (ja) 2002-01-31
KR20020007972A (ko) 2002-01-29

Similar Documents

Publication Publication Date Title
US20090023240A1 (en) Semiconductor laser device and manufacturing method of the same
JP3585817B2 (ja) レーザダイオードおよびその製造方法
KR100232993B1 (ko) 반도체 레이저장치 및 그 제조방법
EP1283574B1 (en) Semiconductor laser element
KR100417096B1 (ko) 반도체 레이저 장치 및 그 제조방법
US4602371A (en) High output semiconductor laser device utilizing a mesa-stripe optical confinement region
JP4028158B2 (ja) 半導体光デバイス装置
JPH10261835A (ja) 半導体レーザ装置、及びその製造方法
JP2001057459A (ja) 半導体レーザ
JP2001185809A (ja) 半導体光デバイス装置及びその製造方法
JP2001135895A (ja) 半導体発光装置
JP2001203423A (ja) 半導体発光装置
JP2002124738A (ja) 半導体光デバイス装置及びその製造方法
JP4517437B2 (ja) 半導体レーザ装置及びその製造方法
JP2679974B2 (ja) 半導体レーザ装置
JPH05211372A (ja) 半導体レーザの製造方法
JP2909144B2 (ja) 半導体レーザ装置及びその製造方法
JP2865160B2 (ja) 半導体レーザの製造方法
JP4163321B2 (ja) 半導体発光装置
JP3071021B2 (ja) 半導体レーザ装置の製造方法
JP2001057458A (ja) 半導体発光装置
JP2001185810A (ja) 半導体光デバイス装置及びその製造方法
JP2002026451A (ja) 半導体光デバイス装置
JP2502835B2 (ja) 半導体レ―ザおよびその製造方法
JPH06283801A (ja) 半導体レーザ

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20100111

Year of fee payment: 7

LAPS Lapse due to unpaid annual fee